Ferroelectric BaSrTiO₃ films structured by an intermediate annealing during the deposition

References

• O. G. Vendik Ferroelectrics find their “niche” among microwave control devices. Phys. Solid State. 51, 1529–1534 (2009).
   Web of Science ®Google Scholar
• J. F. Scott Applications of Modern Ferroelectrics. Science 315, 954–959 (2007).
   PubMed Web of Science ®Google Scholar
• S. V. Razumov, A. V. Tumarkin, M. M. Gaidukov, A. G. Gagarin, A. V. Kozyrev, Vendik O. G., Ivanov, O. U. Buslov, V. N. Keys, L. C. Sengupta, and X. Zhang Characterisation of quality of BaxSr1-xTiO3 thin film by the commutation quality factor measured at microwaves. Appl. Phys. Lett. 81, 1675–1677 (2002).
   Web of Science ®Google Scholar
• A Kozyrev, A. Ivanov, O. Soldatenkov, A. Tumarkin, S. Ivanova, T. Kaydanova, J. D. Perkins, J. Alleman, D. S. Ginley, L. Sengupta, L. Chiu, and X. Zhang Millimeter-wave loaded line ferroelectric phase shifters. Science 55, 847–852 (2003).
   Google Scholar
• W. Chang, C. M. Gilmore, W. J. Kim, J. M. Pond, S. W. Kirchoefer, S. B. Qadri, D. B. Chirsey, and J. S. Horwitz Influence of strain on microwave dielectric properties of Ba,Sr. TiO₃ thin films. J. Appl. Phys. 87, 3044–3049 (2000).
   Google Scholar
• M. J. Lancaster, J. Powell, and A. Porch Thin-film ferroelectric microwave devices. Supercond. Sci. Technol. 11, 1323–1334 (1998).
   Web of Science ®Google Scholar
• O. G. Vendik, S. P. Zubko, and N. Y. Medvedeva “Dead layer” characteristics based on a correlation of the ferroelectric polarization under relevant boundary conditions in parallel plate capacitor. J. Appl. Phys. 105, 053515 (2009).
   Google Scholar
• J. Im, O. Auciello, D. Y. BaumannPK, Streiffer SK, Kaufman, and A. R. Krauss Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices. Appl. Phys. Lett. 76, 625–627 (2000).
   Web of Science ®Google Scholar
• A. V. Tumarkin, V. I. Al'myashev, S. V. Razumov, M. M. Gaidukov, A. G. Gagarin, A. G. Altynnikov, and A. B. Kozyrev Structural properties of barium strontium titanate films grown under different technological conditions. Phys. Solid State. 57, 553–557 (2015).
   Web of Science ®Google Scholar
• V. Buniatian, N. Martirosyan, A. Vorobiev, and S. Gevorgian Dielectric model of point charge defects in insulating paraelectric perovskites. J. Appl. Phys. 110, 094110 (2011).
   Google Scholar
• T. Jackson, and I. Jones Nanoscale defects and microwave properties of (BaSr)TiO3 ferroelectric thin films. J. Mater. Sci. 44, 5288–5296 (2009).
   Web of Science ®Google Scholar
• T. Samoilova, M. Gaidukov, A. Tumarkin, A. Gagarin, A. Altynnikov, and A. Kozyrev Injected charge as a cause of the slow dielectric relaxation in thin film Pt/(Ba,Sr)TiO3/Cu structures. J. Appl. Phys. 115, 204103 (2014).
   Web of Science ®Google Scholar
• S. Zhong, S. P. Alpay, M. W. Cole, E. Ngo, S. Hirsch, and J. D. Demaree Highly Tunable and Temperature Insensitive Multilayer Barium Strontium Titanate Films. Appl. Phys. Lett. 90, 092901 (2007).
   Google Scholar
• M. W. Cole, E. Ngo, S. Hirsch, J. D. Demaree, S. Zhong, and S. P. Alpay The fabrication and material properties of compositionally multilayered Ba1−xSrxTiO3 thin films for realization of temperature insensitive tunable phase shifter devices. J. Appl. Phys. 102, 034104 (2007).
   Google Scholar
• X. Zhu, H. L. Chan, C. Choy, and K. Wong Epitaxial growth and dielectric properties of functionally graded (Ba1−xSrx)TiO3 thin films with stoichimetric variation. J. Vac. Sci. Technol. A 20, 1796–1801 (2002).
   Google Scholar
• T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono Surface Morphologies and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition. Jpn. J. Appl. Phys. 34, 5077–5082 (1995).
   Web of Science ®Google Scholar
• J. H. Ahn, W. J. Lee, and H. G. Kim Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO3 Thin Films. Jpn. J. Appl. Phys. 37, 6472–6474 (1998).
   Web of Science ®Google Scholar
• J. S. Fang, C. T. Chang, and T. S. Chin Electric properties of barium–strontium titanate thin films deposited by two-step radio-frequency sputtering. J. Mater. Res. 16, 2680–2686 (2001).
   Web of Science ®Google Scholar
• V. G. Dubrovskii Nucleation Theory and Growth of Nanostructures. Berlin Heidelberg: Springer-Verlag; (2004).
   Google Scholar
• A. V. Tumarkin, I. T. Serenkov, and V. I. Sakharov Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering. Phys. Solid State. 52, 2561–2564 (2010).
   Web of Science ®Google Scholar
• S. A. Kukushkin Evolution processes in multicomponent and multiphase films. Thin Solid Films 207, 302–312.
   Web of Science ®Google Scholar
• S. A. Kukushkin, and V. V. Slezov Dispersion Systems on Solid Surfaces: Mechanisms of Formation of Thin Films (Evolutionary Approach). St. Petersburg: Nauka (1996) [in Russian].
   Google Scholar
• D. T. Harris, P. G. Lam, M. J. Burch, J. Li, B. J. Rogers, E. C. Dickey, and J. P. Maria Ultra-high tunability in polycrystalline Ba1−xSrxTiO3 thin films. Appl. Phys. Lett. 105, 072904 (2014).
   Google Scholar
• A. B. Kozyrev, V. N. Osadchy, D. M. Kosmin, and A. V. Tumarkin Time tuning of ferroelectric film varactors under pulse voltages. Appl. Phys. Lett. 91, 022905 (2007).
   Google Scholar
• A. G. Altynnikov, A. G. Gagarin, M. M. Gaidukov, A. V. Tumarkin, P. K. Petrov, N. Alford, and A. B. Kozyrev Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere. Appl. Phys. Lett. 104, 042903 (2014).
   Google Scholar
• A. Kozyrev, M. Gaydukov, A. Gagarin, A. Altynnikov, V. Osadchy, A. Tumarkin, P. K. Petrov, and N. M. Alford Evaluation of the space charge trap energy levels in the ferroelectric films. J. Appl. Phys. 106, 014108 (2009).
   Google Scholar