References
- P. S. Dutta, H. L. Bhat, and V. Kumar, The physics and technology of gallium antimonide: An emerging optoelectronic material. J. Appl. Phys. 81, 5821 (1997).
- A. Chavan, A. Chandola, S. Sridaran, and P. Dutta, Surface passivation and capping of GaSb photodiode by chemical bath deposition of CdS. J. Appl. Phys. 100, 064512-1–064512-4 (2006).
- P. Y. Delaunay, A. Hood, B. M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, Passivation of type-II InAs/GaSb double heterostructure. Appl. Phys. Lett. 91 (9), 091112-1–091112-3 (2007).
- R. Stine, E. H. Aifer, L. J. Whitman, and D. Y. Petrovykh, Passivation of GaSb and InAs by pH-activated thioacetamide. Appl. Surf. Sci. 255 (16), 7111–7470 (2009).
- J. A. Robinson, and S. E. Mohney, Characterization of sulfur passivated n-GaSb using transmission electron microscopy and the influence of passivation on ohmic contact resistance. J. Appl. Phys. 96, 2684 (2004).
- P. S. Dutta, K. S. R. Koteswara Rao, H. L. Bhat, and V. Kumar, Effect of ruthenium on the optical and electrical properties of gallium antimonide. J. Appl. Phys. 77, 4825 (1995).
- M. Perotin, P. Coudray, L. Gouskov, H. Luquet, C. Llinares, J. J. Bonnet, L. Soonckindt, and B. Lambert, passivation of GaSb by sulfur treatment. J. Electron. Mater. 23, 7 (1994).
- J. Diaz-Reyes, E. Corona-Organiche, J. L. Herrera-Perez, and J. G. Mendoza-Alvarez, Passivation of GaSb single crystal surfaces studied by photoluminescence. Mod. Phys. Lett. B 15, 804 (2001).
- A. Y. Polyakov, A. G. Milnes, X. L. Li, A. A. Balmashnov, and N. B. Smirkov, Hydrozen and nitrogen plasma treatment effect on surface properties on GaSb and InGaAsSb. Solid-State Electron. 38, 1743 (1995).
- C. J. Sandroff, R. N. Nottenburg, J. C. Bischoff, and R. Bhatt, Dramatic enhancement in the gain of a GaAs/AlGaAs hetrostructure bipolar transistor by surface chemical passivation. Appl. Phys. Lett. 51, 33 (1987).
- V. N. Bessolov and M. V. Lebedev, Surface of n-type InP (100) passivated in sulfide solution. Semiconductors 32, 1141 (1998).
- Z. Y. Liu, D. A. Saulys, and T. F. Kuech, A comparative study of GaSb (100) surface passivation by aqueous and non-aqueous solutions. Appl. Phys. Lett. 83, 2587 (2003).
- Bo Wang, and Zhipeng Wei, Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation. Chemical Physics Letter 556, 182–187 (2013).