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Integrated Ferroelectrics
An International Journal
Volume 213, 2021 - Issue 1
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Research Article

Analytical Study of the Film Bulk Acoustic Resonators Based on Single Crystal LiNbO3 with Different Crystal Orientations

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Pages 182-193 | Received 16 Aug 2020, Accepted 15 Nov 2020, Published online: 28 Feb 2021

References

  • Ruby R. C., et al. High-Q FBAR filters in a wafer-level chip-scale package. IEEE International Solid-State Circuits Conference, (ISSCC), (San Francisco, CA, USA), IEEE 2002, 184-458 (2002). doi:10.1109/ISSCC.2002.992997
  • Yang C. M., et al. Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter. IEEE Symposium on Ultrasonics, 2003, (Honolulu, HI, USA), IEEE 2003, 170-3 (2003). doi:10.1109/ULTSYM.2003.1293381
  • Ruby R., et al. Ultra-miniature high-Q filters and duplexers using FBAR technology. In: 2001 IEEE International Solid-State Circuits Conference (ISSCC), (San Francisco, CA, USA), IEEE 2001, 120–1 (2001). doi:10.1109/ISSCC.2001.912569
  • Ruppel C. C. W. Acoustic wave filter technology–a review IEEE Trans. Sonics Ultrason., 64, 1390–400 (2017). doi:10.1109/TUFFC.2017.2690905
  • Lakin K. M., et al. Solidly mounted resonators and filters. IEEE Ultrasonics Symposium. Proceedings. An International Symposium, (Seattle, WA, USA: IEEE 1995, 905–8 (1995). doi:10.1109/ULTSYM.1995.495711
  • Bi F. Z. and Barber B. P. Bulk acoustic wave RF technology IEEE Microw. Mag., 9, 65–80 (2008). doi:10.1109/MMM.2008.927633
  • Hodge M. D., et al. High rejection UNII 5.2 GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators. 2017 IEEE International Electron Devices Meeting (IEDM), (San Francisco, USA: IEEE 2017, 25-6 (2017). doi:10.1109/IEDM.2017.8268460
  • Muller A., et al. 6.3-GHz film bulk acoustic resonator structures based on a gallium nitride/silicon thin membrane IEEE Electron. Device Lett., 30, 799–801(2009). doi:10.1109/LED.2009.2023538
  • Shealy J. B., et al. Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling. IEEE Radio Frequency Integrated Circuits Symposium (RFIC), (San Francisco, CA, USA: IEEE 2016, 103-6 (2016). doi:10.1109/RFIC.2016.7508261
  • Akiyama M., et al. Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering Adv. Mater., 21, 593–6(2009). doi:10.1002/adma.200802611
  • Edon V., et al. Structural, electrical and piezoelectric properties of LiNbO3 thin films for surface acoustic wave resonators applications Appl. Surf. Sci., 256, 1455–60 (2009). doi:10.1016/j.apsusc.2009.09.002
  • Kadota M., et al. Band-pass-type tunable filter using surface acoustic wave resonator composed of grooved cu electrodes on linbo3 Jpn. J. Appl. Phys., 51, 07GC14 (2012). doi:10.1143/JJAP.51.07GC14
  • Chen F., et al. The electromechanical features of LiNbO3 crystal for potential high temperature piezoelectric applications Journal of Materiomics, 5, 73–80 (2019). doi:10.1016/j.jmat.2018.10.001
  • Bazzan M. and Sada C. Optical waveguides in lithium niobate: Recent developments and applications Appl. Phys. Rev., 2, 040603 (2015). doi:10.1063/1.4931601
  • Moulet J. S., et al. High piezoelectric properties in LiNbO 3 transferred layer by the Smart Cut™ technology for ultra wide band BAW filter applications. IEEE International Electron Devices Meeting(IEDM), (San Francisco, CA, USA: IEEE 2008, 1-4 (2008). doi:10.1109/IEDM.2008.4796785
  • Osugi Y., et al. Single crystal FBAR with LiNbO3 and LiTaO3 piezoelectric substance layers. In: 2007 IEEE/MTT-S International Microwave Symposium, (Honolulu, HI, USA), IEEE 2007, 873-6 (2007). doi: doi:10.1109/MWSYM.2007.380118
  • Baron T., et al. Wideband lithium niobate FBAR filters International Journal of Microwave Science and Technology, 2013, 459767 (2013). doi:10.1155/2013/459767
  • Pijolat M., et al. LiNbO 3 film bulk acoustic resonator. IEEE International Frequency Control Symposium, (Newport Beach, California, USA), IEEE 2010, 661-4 (2010). doi:10.1109/FREQ.2010.5556245
  • Gorisse M., et al. High Frequency LiNbO 3 Bulk Wave Resonator. Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), (Besançon, France), IEEE 2019, 1-2 (2019). doi:10.1109/FCS.2019.8856017
  • Bousquet M., et al. Single-mode high frequency LiNbO 3 Film Bulk Acoustic Resonator. 2019 IEEE International Ultrasonics Symposium (IUS), (Glasgow, Scotland, UK), IEEE 2019, 84-7 (2019). doi:10.1109/ULTSYM.2019.8925617
  • Matsumoto K., et al. High frequency thickness expansion mode bulk acoustic wave resonator using LN single crystal thin plate Jpn. J. Appl. Phys. 59, 036506 (2020). doi:10.35848/1347-4065/ab7861
  • Qin L. and Wang Q.-M. Mass sensitivity of thin film bulk acoustic resonator sensors based on polar c-axis tilted zinc oxide and aluminum nitride thin film J. Appl. Phys., 108, 104510 (2010). doi:10.1063/1.3483245
  • Wingqvist G., et al. Shear mode AlN thin film electro-acoustic resonant sensor operation in viscous media Sens. Actuators, B: Chemical, 123, 466–73 (2007). doi:10.1016/j.snb.2006.09.028
  • Weber J., et al. Shear mode FBARs as highly sensitive liquid biosensors Sens. Actuators, A: Physical, 128, 84–8(2006). doi:10.1016/j.sna.2006.01.005

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