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Integrated Ferroelectrics
An International Journal
Volume 12, 1996 - Issue 2-4
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Session V: Thin films

Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering

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Pages 241-249 | Received 27 May 1996, Published online: 19 Aug 2006

References

  • Adachi , H. and Wasa , K. 1991 . Sputtering Preparation of Ferroelectric PLZT Thin Films and Their Optical Application . IEEE Trans. Ultra. Ferro. Freq. Control , 38 ( 6 ) : 645
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  • Chikarmane , V. 1992 . Annealing of PZT (65/35) Thin Films for ULSI Storage Dielectric Applications: Phase Transformation and Electrical Characteristics . J. Elect. Mater. , 21 ( 5 ) : 503
  • Sigmund , P. 1980 . Sputtering of Single and Multiple Component Materials . J. Vac. Sci. Technol. , 17 ( 1 ) : 396
  • Fox , G. and Krupanidhi , S. 1993 . Composition/Structure/Property Relations of Multi-Ion-Beam Reactive Sputtered Lead Lanthanum Titanate Thin Films: Part III. Electrical Properties . J. Mater. Res. , 8 ( 9 ) : 2203
  • Sawyer , C. and Tower , C. 1930 . Rochelle Salt as a Piezoelectric . Phys. Rev. , 35 : 269
  • Chikarmane , V. 1992 . Effects of Post-Deposition Annealing Ambient on the Electrical Characteristics and Phase Transformation Kinetics of Sputtering Lead Zirconate Titanate (65/35) Thin Film Capacitors . J. Vac. Sci. Technol. , 10 ( 4A ) : 1562
  • Duiker , H. 1990 . Fatigue and Switching in Ferroelectric Memories: Theorey and Experiment . J. Appl. Phys. , 68 ( 11 ) : 5783

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