Modeling ferroelectric capacitor switching using a parallel-elements model

References

• Kulkarni , A. K. , Rohrer , G. A. , Narayan , S. and McMillan , L. D. 1991 . A Circuit Model for a Thin Film Ferroelectric Memory Device . Ferroelectrics , 116 ( 1–2 ) : 95
   Web of Science ®Google Scholar
• Evans , J. T. and Bullington , J. A. A Ferroelectric Capacitor Simulation Model , unpublished
   Google Scholar
• Dunn , D. E. 1994 . A Ferroelectric Capacitor Macromodel and Parameterization Algorithm for Spice Simulation . IEEE Transaction on Ultrasonics, Ferroelectrics, and Frequency Control , 41 ( 3 ) : 3
   Web of Science ®Google Scholar
• Miller , S. L. , Schwank , J. R. , Nasby , R. D. and Rodgers , M. S. 1991 . Modeling Ferroelectric Capacitor Switching with Asymmetric Nonperiodic Input Signals and Arbitrary Initial Conditions . J. Appl. Phys. , 70 ( 5 ) : 2849
   Web of Science ®Google Scholar
• Miller , S. L. and McWhorter , P. J. 1992 . Physics of the Ferroelectric Nonvolatile Memory Field Effect Transistor . J. Appl. Phys. , 72 ( 12 ) : 5999
   Web of Science ®Google Scholar
• Zurcher , P. and Gealy , F. D. July 1993 . “ Polycrystalline Ferroelectric Thin Film Capacitors for Non-Volatile Random Access Memories: Self-Consistent, Quasi-Static Calculation, and Comparison with Experiment ” . In ELSOFT 93 July , Southhampton, , UK
   Google Scholar