Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi₂Ta₂O₉ thin films grown by liquid delivery MOCVD using a double alcoholate

T. Jimbo Tokyo Institute of Technology, Frontier Collaborative Research Center, Midoriku, Yokohama, 2268503, Japan

H. Sano Tokyo Institute of Technology, Frontier Collaborative Research Center, Midoriku, Yokohama, 2268503, Japan

Y. Takahashi Precision and Intelligence Laboratory, Midoriku, Yokohama, 2268503, Japan

H. Funakubo Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midoriku, Yokohama, 2268503, Japan

E. Tokumitsu Tokyo Institute of Technology, Frontier Collaborative Research Center, Midoriku, Yokohama, 2268503, Japan

H. Ishiwara Tokyo Institute of Technology, Frontier Collaborative Research Center, Midoriku, Yokohama, 2268503, Japan; Precision and Intelligence Laboratory, Midoriku, Yokohama, 2268503, Japan

References

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Lee , M. J. , Sano , H. , Jimbo , T. , Funakubo , H. , Tokumitsu , E. and Ishiwara , H. 1998 . Extended Abstracts of 17th Electronic Materials Symposium . 1998 , Izunagaoka, Japan.
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Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi₂Ta₂O₉ thin films grown by liquid delivery MOCVD using a double alcoholate

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Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi2Ta2O9 thin films grown by liquid delivery MOCVD using a double alcoholate

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Effects of growth conditions and RF plasma on crystalline and electrical properties of SrBi₂Ta₂O₉ thin films grown by liquid delivery MOCVD using a double alcoholate