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Integrated Ferroelectrics
An International Journal
Volume 27, 1999 - Issue 1-4
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Section N: Circuits and devices

A demonstration of low voltage performance, from scaled PLZT films, on a fully integrated 64K FRAM®

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Pages 315-324 | Received 07 Mar 1999, Published online: 19 Aug 2006

References

  • Traynor , S. D. , Hadnagy , T. D. and Kammerdiner , L. 1997 . Capacitor Test Simulation of Retention and Imprint Characteristics for Ferroelectric Memory Operation, Integrated Ferroelectrics , Vol 16 : 63 – 76 .
  • Hadnagy , T. D. 1997 . Materials and Production Characterization Requirements for the Production of FRAM® Memory Products, Integrated Ferroelectrics , Vol 18 : 1 – 17 .
  • Hadnagy , T. D. and Davenport , Tom . 1998 . Addition of Ca and Sr in PLZT to Improve FRAM® Performance and Reliability, Integrated Ferroelectrics , Vol 22 : 183 – 193 .
  • Kim , S. H. , Kim , D. J. , Maria , J. P. , Kingon , A. I. , Hadnagy , T. D. and Sun , S. 1999 . Effects of Ca anti Sr Dopants in PLZT thin Films for Low Voltage Operation, ISIF Conference , Paper 90C

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