An analysis of the spatial homogeneity of a photodetector surface in an infrared image converter using the fractal dimension

REFERENCES

• Astrov, Y. A., Egorov, V. V., Kasymov, Sh. S., Murugov, V. M., Paritskii, L. G. and Ryvkin, S. M. New photographic device for study of the characteristic of the laser radiation. Kvantovaya Elektronika, 1977, 4(8), 1681.
   Google Scholar
• Salamov, B. G., Zeinally, A. Kh., Lebedeva, N. N. and Paritskii, L. G. Image recording on bismuth film in an ionization-type photographic system. J. Photogr. Sci., 1991, 39, 114.
   Web of Science ®Google Scholar
• Salamov, B. G. An ionization type semiconductor photographic system based on high-resistivity semiconductor film. Imaging Sci. J., 1997, 45, 69.
   Web of Science ®Google Scholar
• Dreyfus, R. W., Jasinski, J. M., Walkup, R. E. and Selwyn, G. S. Optical diagnostics of low pressure plasmas. Pure Appl. Chem., 1985, 57, 1265.
   Web of Science ®Google Scholar
• Selwyn, G. S., Baston, L. D. and Sawin, H. H. Detection of C1 and chlorine-containing negative ions in Rf plasmas by two-photon laser-induced fluorescence. Appl Phys. Lett., 1987, 51, 898.
   Web of Science ®Google Scholar
• Gaebe, C. E., Hayes, T. R. and Gottscho, R. A. Effect of photodetachment on a radiofrequency discharge through BCL3. Phys. Rev. A, 1987, 35, 2993.
   Web of Science ®Google Scholar
• Wormhoudt, J., Stanson, A. C., Richards, A. D. and Sawin, H. H. Atomic chlorine concentration and gas temperature-measurements in a plasma-etching reactor. J. Appl. Phys., 1987, 142, 61.
   Google Scholar
• Selwyn, G. S., Ai, B. D. and Singh, J. Real-time measurement of plasma/surface interaction by plasma-amplified photoelectron detection. Appl. Phys. Lett., 1988, 52(23), 1953.
   Web of Science ®Google Scholar
• Mahorta, V. and Wilsem, C. W. In Passivation of GaAs and InP in Handbook of Compound Semiconductors (Eds P. H. Holloway and G. E. McGuire), 1995, p. 328 (Noyes Publications, New Jersey).
   Google Scholar
• Hasegawa, F., Onomura, M., Mogi, C. and Nannichi, Y. Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2. Solid-State Electron., 1988, 31, 223.
   Web of Science ®Google Scholar
• Lebedeva, N. N., Salamov, B. G., Akinoglu, B. G. and Allakhverdiev, K. R. Visualization of electrical inhomogeneities in high-ohmic semiconductor plates by an ionization-type photographic system. J. Phys. D: Appl. Phys., 1994, 27, 1229.
   Web of Science ®Google Scholar
• Thomas, T. R. and Rosen, B.-G. Determination of the optimum sampling interval for rough contact mechanics. Tribology Int., 2000, 33, 601–610.
   Web of Science ®Google Scholar
• Li, X. W., Tian, J. F., Kang, Y. and Wang, Z. G. Quantitative-analysis of fracture surfaces by roughness and fractal method. Scripta Metall Mater., 1995, 33, 803.
   Web of Science ®Google Scholar
• Kasap, R. and Kurt, E. A comparison of chaotic circuits from a statistical approach. J. Appl. Math. Decis. Sci., 1998, 2(2), 193.
   Google Scholar
• Lewis, M. and Rees, D. Fractal surfaces of proteins. Science, 1985, 230, 1163.
   PubMed Web of Science ®Google Scholar
• Sarkar, N. and Chaudhuri, B. B. An efficient approach to estimate fractal dimension of textural images. Pattern Recognition, 1992, 23(9), 1035–1041.
   Google Scholar
• Pentland, A. P. Fractal-based description of natural scenes. IEEE Trans. Pattern Anal. Machine Intell, 1984, 6, 661.
   PubMed Web of Science ®Google Scholar
• Peleg, S., Naor, J., Hartley, R. and Avnir, D. Multiple resolution texture analysis and classification. IEEE Trans. Pattern Anal. Machine Intell, 1984, PAMI-6, 518–523.
   Web of Science ®Google Scholar
• Gangepain, J. J. and Roques-Carmes Fractal approach to two-dimensional and three-dimensional surface roughness. Wear, 1986, 109, 119–126.
   Web of Science ®Google Scholar
• Jin, X. C, Ong, S. H. and Jayasooriah A practical method for estimating fractal dimensions of textured images. Pattern Recognition Lett., 1995, 16, 457–464.
   Web of Science ®Google Scholar
• Majumdar, A. and Bhushan, B. Fractal model of elastic-plastic contact between rough surfaces. Trans. ASME, J. Tribology, 1991, 113, 1–11.
   Web of Science ®Google Scholar
• Hua, L., Zetun, D. and Ziqin, W. Multifractal behaviour of the distribution of secondary electron-emission sites on solid state surfaces. Phys. Rev. B, 1995, 51(19), 13554.
   Web of Science ®Google Scholar
• Yücel Kurt, H., Kurt, E. and Salamov, B. G. An analysis of the image homogeneity in an ionization-type IR image converter using the fractal dimension. Imaging Sci. J., 2001, 49, 205–212.
   Web of Science ®Google Scholar
• Mandelbrot, B. B. The Fractal Geometry of Nature, 1982 (Freeman Press, San Francisco, California).
   Google Scholar
• Bisoi, A. K. and Mihra, J. On calculation of fractal dimension of images. J. Pattern Recognition Lett., 2001, 22, 631.
   Web of Science ®Google Scholar
• Germanova, K., Donchev, V., Hardalov, C. and Nikolov, L. EL2 in photoconductivity spectra of Cr-doped SI GaAs bulk crystals. J. Phys. D., 1987, 20, 1507.
   Google Scholar
• Paritskii, L. G. and Khaidarov, Z. Spatial stabilization of the current in a semiconductor-gas discharge system. Semiconductors, 1993, 27, 1108.
   Web of Science ®Google Scholar
• Salamov, B. G., Lebedeva, N. N. and Zeinally, A. Kh. Spectral characteristics of a photographic system of the ionization type. Sov. Phys. Tech. Phys., 1987, 32, 1193.
   Google Scholar
• Campo, A., Cardinaud, Ch. and Turban, G. Investigation of Si and Ge etching mechanisms in radiofrequency CF4-O2 plasma based on surface reactivities. Plasma Sources Sci. Technol., 1995, 4, 398.
   Web of Science ®Google Scholar
• Yoon, S. F., Ng, T. K. and Zheng, H. Q. Study of GaAs and GaInP etching in C12/Ar electron cyclotron resonance plasma. Thin Solid Films, 2001, 394, 250.
   Web of Science ®Google Scholar
• Belyakov, L. V., Mageramov, A. and Paritskii, L. G. Effect of the surface inhomogeneities on photoconductivity of SI GaAs. Sov. Phys. Semicond., 1978, 12, 739.
   Google Scholar
• Salamov, B. G., Lebedeva, N. N. and Colakoglu, K. The cooling semiconductor photographic system for visualization of the IR radiation. Imaging Sci. J., 1999, 47(2), 81–85.
   Web of Science ®Google Scholar
• Robey, S. W. Kinetic instabilities during plasma etching of GaAs (001). Phys. Rev. B., 2002, 65, 115.
   Google Scholar
• Falkenstein, Z. and Cogan, J. J. Photoresist etching with dielectric barrier discharges in oxygen. J. Appl. Phys., 1997, 82(12), 6273.
   Web of Science ®Google Scholar
• Collart, E. J. H., Baggerman, J. A. G. and Visser, R. J. On the role of atomic oxygen in the etching of organic polymers in a radio-frequency oxygen discharge. J. Appl. Phys., 1995, 78, 47–54.
   Web of Science ®Google Scholar
• Synowiec, Z. Ion bombardment in surface passivation of GaAs. Vacuum, 2001, 63, 487.
   Web of Science ®Google Scholar