In situ MEMS testing: correlation of high-resolution X-ray diffraction with mechanical experiments and finite element analysis

References

• Jadaan OM, Nemeth NN, Bagdhan J, Sharpe WN. Probabilistic Weibull behaviour and mechanical properties of MEMS brittle materials. J Mater Sci. 2003;38:4087–4113. 10.1023/A:1026317303377
   Web of Science ®Google Scholar
• Gaither MS, et al. Strength distribution of single crystal silicon theta-like specimen. Scr Mater. 2010;63:422–425. 10.1016/j.scriptamat.2010.04.047
   Web of Science ®Google Scholar
• Fitzgerald AM, et al. A general methodology to predict the reliability of single-crystal silicon MEMS devices. J Microelectromech Syst. 2009;18:962–970. 10.1109/JMEMS.2009.2020467
   Web of Science ®Google Scholar
• Dommann A, Neels A. The role of strain in new semiconductor devices. Adv Eng Mater. 2009;11:275–277. 10.1002/adem.v11:4
   Web of Science ®Google Scholar
• Neels A, et al. Reliability and Failure in Single Crystal Silicon MEMS Devices. Microelectron Reliab. 2008;48:1245–1247. 10.1016/j.microrel.2008.07.018
   Web of Science ®Google Scholar
• Neels A, Niedermann P, Dommann A. Life time predictions through X-ray defect analysis of MEMS devices. Materials Science Forum. 2008; 584–586:518–522.
   Google Scholar
• Mazza E, Dual J. Mechanical behaviour of a mm-sized single crystal silicon structure with sharp notches. J Mech Phys Solids. 1999;47:1795–1821. 10.1016/S0022-5096(98)00112-4
   Web of Science ®Google Scholar
• Wortmann JJ, Evans RA. Young’s modulus, shear modulus and Poisson’s ratio in silicon an germanium. J Appl Phys. 1973;44:534–535.
   Google Scholar
• Bell DJ, et al. MEMS actuators and sensors: observations on their performance and selection for purpose. J Micromech Microeng. 2005;15:153–164. 10.1088/0960-1317/15/7/022
   Web of Science ®Google Scholar
• Kovacs GTA. Micromachined transducers – sourcebook. New York, NY: McGraw-Hill; 1998.
   Google Scholar
• Boyce BL, Ballarini R, Chasiotis I. An argument for proof testing brittle microsystems in high-reliability applications. J Micromech Microeng. 2004;18:1–4.
   Google Scholar
• Sharpe WN, Yuan B, Edwards RL. A new technique for measuring the mechanical properties of thin films. J Microelectromech Syst. 1997;6:193–199. 10.1109/84.623107
   Web of Science ®Google Scholar
• Sharpe WN, Turner KT, Edwards RL. Tensile testing of polysilicon. Exp Mech. 1999;39:162–170. 10.1007/BF02323548
   Web of Science ®Google Scholar
• Suwito W, et al. Elastic moduli, strength, and fracture initiation at sharp notches in etched single crystal silicon microstructures. J Appl Phys. 1999;85:3519–3534. 10.1063/1.369711
   Web of Science ®Google Scholar
• Chen K-S, Ayon A, Spearing SM. Controlling and testing fracture strength of silicon on the mesoscale. J Am Ceram Soc. 2000;83:1476–1484. 10.1111/jace.2000.83.issue-6
   Web of Science ®Google Scholar
• Wilson CJ, Ormeggi A, Narbutovskih M. Fracture testing of silicon microcantilever beams. J Appl Phys. 1996;79:2386–2393. 10.1063/1.361102
   Web of Science ®Google Scholar
• Namazu T, Isono Y, Tanaka T. Evaluation of size effect on mechanical properties of single crystal silicon by nanoscale bending test using AFM. J Microelectromech Syst. 2000;9:450–459. 10.1109/84.896765
   Web of Science ®Google Scholar
• Chasiotis I, Knauss WG. A new microtensile tester for the study of MEMS materials with the aid of atomic force microscopy. Exp Mech. 2002;42:51–57. 10.1007/BF02411051
   Web of Science ®Google Scholar
• Schifferle A, Dommann A, Neels A, Mazza E. In situ MEMS Testing. NSTI-Nanotech. 2010;2(2010):165–168.
   Google Scholar
• Cousins CSG. Internal strain in diamond structure elements: A survey of theoretical approaches. J Physics C – Solid State Phys. 1982;15:1857–1872. 10.1088/0022-3719/15/9/009
   Web of Science ®Google Scholar
• Wintersberger E, et al. Algorithms for the calculation of X-ray diffraction from finite element data. J Appl Crystallogr. 2010;43:1287–1299. 10.1107/S0021889810032802
   Web of Science ®Google Scholar
• Hruada N, et al. X-ray diffraction study of the composition and strain fields in buried SiGe islands. Eur Phys J Spec Top. 2009;167:41–46. 10.1140/epjst/e2009-00934-7
   Web of Science ®Google Scholar
• Zhuang Y, et al. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar highresolution X-ray diffraction and grazing incidence diffraction. J Appl Phys. 1999;32:A224–A229.
   Web of Science ®Google Scholar
• Uragami T, et al. Characterization of strain distribution in quantum dots by X-ray diffraction. J Cryst Gwth. 2001;234:197–201.
   Web of Science ®Google Scholar
• Eberl F, et al. Finite-Element calculations of the lattice rotation field of a tensile-loaded nickel-based alloy multicrystal and comparison with topograghical X-ray diffraction measurements. Metall Mater Trans A. 2001;33A:2825–2833.
   Google Scholar
• Pietsch U, Holy V, Baumbach T. High-resolution X-ray scattering from thin films and nanostructures. 2nd ed. Berlin: Springer, ISBN-10: 0387400923; 2004. 10.1007/978-1-4757-4050-9
   Google Scholar
• Eberlein M, et al. Influence of crystallographic orientation on local strains in silicon: a combined high-resolution X-ray diffraction and finite modelling investigation. Elsevier, Thin Solid Films. 2008;516:8042–8048. 10.1016/j.tsf.2008.04.061
   Web of Science ®Google Scholar
• Neels A, et al. Aging of MEMS – Correlation of Mechanical and Structural Properties. Procedia Chem. 2009;1:820–823. doi:10.1016/j.proche.2009.07.204.
   Google Scholar
• Schifferle A, et al. Where is the limit? Yield strength improvement in silicon microstructures by surface treatments. Phys. Status Solidi A. 2016;213:102–107. 10.1002/pssa.v213.1
   Web of Science ®Google Scholar
• Schifferle A. Combined experimental methods for the mechanical characterization of materials [ETH Diss No. 20048]. Swiss Federal Institute of Technology ETHZ, Center of Mechanics; 2012.
   Google Scholar
• Schifferle A, et al. Combined testing for MEMS characterization. Procedia Eng. 2010;5:878–881. 10.1016/j.proeng.2010.09.249
   Google Scholar
• McSkimin HJ, Andreatch P. Measurement of third-order moduli of silicon and germanium. J Appl Phys. 1964;35:3312–3319. 10.1063/1.1713214
   Web of Science ®Google Scholar
• Faleev N, Lu H, Schaff W. Low density of threading dislocations in AIN grown on sapphire. J Appl Phys. 2007;101: 093516-093516-5. doi:https://doi.org/10.1063/1.2728755.
   PubMed Web of Science ®Google Scholar
• Fewster PF. Reciprocal space mapping. Crit Riviews Solid State Mater Sci. 1997;22:69–110. 10.1080/10408439708241259
   Web of Science ®Google Scholar
• Fewster PF. Advances in the structural characterization of semiconductor crystals by X-ray scattering methods. Prog Cryst gwth Characterzation Mater. Elsevier 2004;48/49:245–273. 10.1016/j.pcrysgrow.2005.03.001
   Web of Science ®Google Scholar
• Fewster PF. X-ray scattering from semiconductors. 2nd Edition, London: Imperial College Press, ISBN-1-86094-360-8; 2003. 10.1142/p289
   Google Scholar
• Namazu T, Inoue S. Characterzation of single crystal silicon and electroplated nickel films by uniaxial tensile test with in situ X-ray diffraction measurement. Fatigue Fract. Engng Mater Struct. 2006;30:13–20.
   Web of Science ®Google Scholar
• Fewster PF, Andrew N. Interpretation of Diffuse Scattering Close to Bragg Peaks by X-ray Topography. J Appl Crystallogr. 1993;26:812–819. 10.1107/S0021889893006259
   Web of Science ®Google Scholar
• Wang VS, Matyi RJ, Norheden KJ. Triple-crystal X-ray diffraction analysis of reactive ion etched gallium arsenide. J Appl Phys. 1994;75:3835–3841. 10.1063/1.356062
   Web of Science ®Google Scholar
• Hu ZW, Thomas PA, Webjörn J. High-resolution X-ray characterization of periodically domain-inverted nonlinear optical crystals. J Appl Phys. 1995;28:189–194.
   Web of Science ®Google Scholar
• Zienkiewicz OC, Taylor RL. Finite element method for solid and structural mechanics. Oxford: Elsevier Butterworth-Heinemann, ISBN 0-7506-6321-9; 2006.
   Google Scholar
• Dassault Sytèmes: ABAQUS 6.9, User Manual; 2009.
   Google Scholar
• Brantley WA. Calculated elastic constants for stress problems associated with semiconductor devices. J Appl Phys. 1973;44:534. 10.1063/1.1661935
   Web of Science ®Google Scholar
• Kim J, Cho D, Muller R. Why is (111) Silicon a better Mechanical Material for MEMS. Proc. Transducers. 2001;73:662–665.
   Google Scholar
• Lang U. Experimental methods for evaluating the mechanical properties of thin layers of intrinsically conductive polymers [ETH Diss No. 17754]. Swiss Federal Institute of Technology ETHZ, Center of Mechanics; 2008.
   Google Scholar