2,933
Views
10
CrossRef citations to date
0
Altmetric
Optical, magnetic and electronic device materials

Electrical oscillation generation with current-induced resistivity switching in VO2 micro-channel devices

, ORCID Icon, &
Pages 693-701 | Received 08 May 2018, Accepted 05 Sep 2018, Published online: 04 Oct 2018

References

  • Morin FJ. Oxides which show a metal-to-insulator transition at the neel temperature. Phys Rev Lett. 1959;3:34–36.
  • Eyert V. The metal-insulator transitions of VO2: a band theoretical approach. Ann der Phys. 2002;11:650–702.
  • Goodenough JB . The two components of the crystallographic transition in VO2 . J Solid State Chem. 1971;3:490–500.
  • Shin S , Suga S , Taniguchi M , et al. Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions in VO2, V6O13, and V2O3 . Phys Rev B. 1990;41:4993–5009.
  • Chen C , Fan Z . Changes in VO2 band structure induced by charge localization and surface segregation. Appl Phys Lett. 2009;95:262106.
  • Yang Z , Ko C , Ramanathan S . Oxide electronics utilizing ultrafast metal-insulator transitions. Annu Rev Mater Res. 2011;41:337–367.
  • Chen C , Zhu Y , Zhao Y , et al. VO2 multidomain heteroepitaxial growth and terahertz transmission modulation. Appl Phys Lett. 2010;97:211905.
  • Ferdous Hoque MN , Karaoglan-Bebek G , Holtz M , et al. High performance spatial light modulators for terahertz applications. Opt Commun. 2015;350:309–314.
  • Karaoglan-Bebek G , Hoque MNF , Holtz M , et al. Continuous tuning of W-doped VO2 optical properties for terahertz analog applications. Appl Phys Lett. 2014;105:201902.
  • Zhu Y , Vegesna S , Zhao Y , et al. Tunable dual-band terahertz metamaterial bandpass filters. Opt Lett. 2013;38:2382–2384.
  • Driscoll T , Kim HT , Chae BG , et al. Memory metamaterials. Science. 2009;325:1518–1521.
  • Ruzmetov D , Gopalakrishnan G , Ko C , et al. Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer. J Appl Phys. 2010;107:114516.
  • Yang Z , Zhou Y , Ramanathan S . Studies on room-temperature electric-field effect in ionic-liquid gated VO2 three-terminal devices. J Appl Phys. 2012;111:014506.
  • Ji H , Wei J , Natelson D . Modulation of the electrical properties of VO2 nanobeams using an ionic liquid as a gating medium. Nano Lett. 2012;12:2988–2992.
  • Driscoll T , Kim HT , Chae BG , et al. Phase-transition driven memristive system. Appl Phys Lett. 2009;95:043503.
  • Bae SH , Lee S , Koo H , et al. The memristive properties of a single VO2 nanowire with switching controlled by self-heating. Adv Mater. 2013;25:5098–5103.
  • Sakai J . High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance. J Appl Phys. 2008;103:103708.
  • Kim HT , Kim BJ , Choi S , et al. Electrical oscillations induced by the metal-insulator transition in VO2 . J Appl Phys. 2010;107:023702.
  • Shukla N , Parihar A , Freeman E , et al. Synchronized charge oscillations in correlated electron systems. Sci Rep. 2015;4:4964.
  • Jerry M , Ni K , Parihar A , et al. Stochastic insulator-to-metal phase transition-based true random number generator. IEEE Electron Device Lett. 2018;39:139–142.
  • Belyaev M , Velichko A , Putrolaynen V , et al. Electron beam modification of vanadium dioxide oscillators. Phys Status Solidi C. 2017;14:1600236.
  • Simon Mun B , Yoon J , Mo SK , et al. Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal. Appl Phys Lett. 2013;103:061902.
  • Zhao Y , Hao J , Chen C , et al. Electrically controlled metal–insulator transition process in VO2 thin films. J Phys Condens Matter. 2012;24:035601.
  • Crunteanu A , Givernaud J , Leroy J , et al. Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis. Sci Technol Adv Mater. 2010;11:065002.
  • Kim BJ , Seo G , Choi J , et al. Laser-assisted control of electrical oscillation in VO2 thin films grown by pulsed laser deposition. Jpn J Appl Phys. 2012;51:107302.
  • Maffezzoni P , Daniel L , Shukla N , et al. Modeling and simulation of vanadium dioxide relaxation oscillators. IEEE Trans Circuits Syst I Regul Pap. 2015;62:2207–2215.
  • Chen C , Zhao Y , Pan X , et al. Influence of defects on structural and electrical properties of VO2 thin films. J Appl Phys. 2011;110:023707.
  • Sakai J , Kurisu M . Effect of pressure on the electric-field-induced resistance switching of VO2 planar-type junctions. Phys Rev B. 2008;78:033106.