1,565
Views
19
CrossRef citations to date
0
Altmetric
Optical, magnetic and electronic device materials

Potential of ITO thin film for electrical probe memory applications

, , &
Pages 791-801 | Received 10 Jul 2018, Accepted 06 Oct 2018, Published online: 29 Oct 2018

References

  • Bhaskaran H, Sebastian A, Despont M. Nanoscale PtSi tips for conducting probe technologies. IEEE Trans Nanotechnol. 2009;8:128–131.
  • Lencer D, Salinga M, Grabowski B, et al. A map for phase-change materials. Nat Mater. 2008;7:972–977.
  • Wang L, Tu L, Wen J. Application of phase-change materials in memory taxonomy. Sci Technol Adv Mater. 2017;18:406–429.
  • Robertson J. Diamond-like amorphous carbon. Mater Sci Eng: R: Rep. 2002;37:129–281.
  • Wang L, Gong SD, Yang CH, et al. Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode. Nanotechnol Rev. 2016;5:455–460.
  • Wright CD, Marilyn M, Aziz MM. Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes. IEEE Trans Nanotechnol. 2006;5:50–61.
  • Hayat H, Kohary K, Wright CD. Ultrahigh storage densities via the scaling of patterned probe phase-change memories. IEEE Trans Nanotechnol. 2017;16:767–772.
  • Park J, Kim SW, Kim JH, et al. Phase change memory employing a Ti diffusion barrier for reducing reset current. Thin Solid Film. 2016;612:135–140.
  • Guo EJ, Guo HZ, Lu HB, et al. Structure and characteristics of ultrathin indium tin oxide films. Appl Phys Lett. 2011;98:011905.
  • Gao MZ, Job R, Xue DS, et al. Thickness dependence of resistivity and optical reflectance of ITO films. Chin Phys Lett. 2008;25:1380–1383.
  • Ashida T, Miyamura A, Oka N, et al. Thermal transport properties of polycrystalline tin-doped indium oxide films. J Appl Phys. 2009;105:073709.
  • Brinzari VI, Cocemasov AI, Nika DL, et al. Ultra-low thermal conductivity of nanogranular indium tin oxide films deposited by spray pyrolysis. Appl Phys Lett. 2017;110:071904.
  • Wang L, Wright CD, Aziz MM, et al. A physics-based three dimensional model for write and read performances of phase-change probe memory. J Nanosci Nanotechnol. 2015;15:2785–2789.
  • Wang L, Wen J, Xiong BS. Nanoscale thermal cross-talk effect on phase-change probe memory. Nanotechnology. 2018;29:375201–375210.
  • Kaes M, Gallo ML, Sebastian A, et al. High-field electrical transport in amorphous phase-change materials. J Appl Phys. 2016;118:135707–135711.
  • Gallo ML, Kaes M, Sebastian A, et al. Subthreshold electrical transport in amorphous phase-change materials. New J Phys. 2015;17:093035.
  • Liu DS, Sheu CS, Lee CT, et al. Thermal stability of indium tin oxide thin films co-sputtered with zinc oxide. Thin Solid Films. 2008;516:3196–3203.
  • Hosseini P, Wright CD, Bhaskaran H. An optoelectronic framework enabled by low dimensional phase-change films. Nature. 2014;511:206–211.
  • Wang L, Wright CD, Aziz MM, et al. A contact resistance model for scanning probe phase-change memory. J Micromech Microeng. 2014;24:037001.
  • Wright CD, Wang L, Shah P, et al. The design of rewritable ultrahigh density scanning-probe phase-change memories. IEEE Trans Nanotechnol. 2011;10:900–912.
  • Reifenberg JP, Panzer MA, Kim S, et al. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films. Appl Phys Lett. 2007;91:111904.
  • Wang L, Wright CD, Aziz MM, et al. Optimisation of scanning probe phase-change memory in terms of the thermal conductivities of capping and under layer. EPL. 2013;104:56007.
  • Bhaskaran H, Sebastian A, Drechsler U, et al. Encapsulated tip for reliable nanoscale conduction in scanning probe technologies. Nanotechnology. 2009;208:105701–105708.
  • Gidon S, Lemonnier O, Rolland B, et al. Electrical probe storage using joule heating in phase change media. Appl Phys Lett. 2005;85:6392–6394.
  • Wang L, Wen J, Yang CH, et al. The route for ultra-high recording density using probe-based data storage device. Nano. 2015;10:1550118.