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Philosophical Magazine Volume 87, 2007 - Issue 13: Intentional and Unintentional Localization in InGaN
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Original Articles

Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques

S. F. Chichibu¥ Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, JapanCorrespondence[email protected]
View further author information
,
A. Uedono Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan
,
T. Onuma Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
,
B. A. Haskell Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
A. Chakraborty Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
T. Koyama Institute of Applied Physics and 21st Century COE office, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan; Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
,
P. T. Fini Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
S. Keller Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
S. P. Denbaars Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
J. S. Speck Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
U. K. Mishra Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
S. Nakamura Nakamura Inhomogeneous Crystal Project, ERATO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan; Departments of Electrical and Computer Engineering and Materials Engineering, University of California, Santa Barbara, CA 93106, USA
,
S. Yamaguchi High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
,
S. Kamiyama High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
,
H. Amano High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
,
I. Akasaki High-Tech Research Centre, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
,
J. Han Technical Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
&
T. Sota Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Japan
 show all
Pages 2019-2039 | Received 14 Aug 2006, Accepted 16 Jan 2007, Published online: 17 May 2007

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