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Philosophical Magazine Volume 92, 2012 - Issue 31
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Part A: Materials Science

High-resolution observation of basal-plane C-core edge dislocations in 4H–SiC crystal by transmission electron microscopy

Hirofumi Matsuhata Advanced Power Electronics Research Centre, National Research Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan; Nanostructure Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567, JapanCorrespondence[email protected]
,
Takeharu Kato Nanostructure Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567, Japan
,
Susumu Tsukimoto World Premier International Research Centre Initiative, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
&
Yuichi Ikuhara Nanostructure Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567, Japan; World Premier International Research Centre Initiative, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan; Institute of Engineering Innovation, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
Pages 3780-3788 | Received 06 Jun 2011, Accepted 18 Apr 2012, Published online: 22 May 2012

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