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Philosophical Magazine Volume 94, 2014 - Issue 15
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Part A: Materials Science

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Hirofumi MatsuhataAdvanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki305-8568, Japan;R&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, JapanCorrespondence[email protected]
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Hirotaka YamaguchiAdvanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki305-8568, Japan;R&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan
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Tamotsu YamashitaR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;Showa Denko K. K., 1-13-9 Shibadaimon, Minato-ku, Tokyo105-8518, Japan
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Toshiaki TanakaR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;Central Research Laboratory, Hitachi Ltd., 1-280 Koigakubo, Kokubunji, Tokyo185-8601, Japan
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Bin ChenR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
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Takashi SekiguchiR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
Pages 1674-1685 | Received 30 Mar 2013, Accepted 09 Feb 2014, Published online: 14 Apr 2014

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