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Part A: Materials Science

Improved diode properties in zinc telluride thin film-silicon nanowire heterojunctions

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Pages 1164-1183 | Received 04 Aug 2014, Accepted 02 Mar 2015, Published online: 26 Mar 2015

References

  • C. Cheng and H.J. Fan, Nano Today 7 (2012) p.327.10.1016/j.nantod.2012.06.002
  • R. Yu, Q. Lin, S.F. Leung and Z. Fan, Nano Energy 1 (2012) p.57.10.1016/j.nanoen.2011.10.002
  • C. Yang, C.J. Barrelet, F. Capasso and C.M. Lieber, Nano Lett. 6 (2006) p.2929.10.1021/nl062314b
  • V. Sivakov, G. Andrä, A. Gawlik, A. Berger, J. Plentz, F. Falk and S.H. Christiansen, Nano Lett. 9 (2009) p.1549.10.1021/nl803641f
  • F. Qian, S. Gradecak, Y. Li, C.Y. Wenand C.M. Liebe, Nano Lett. 5 (2005) p.2287.10.1021/nl051689e
  • Y. Cui, Z. Zhong, D. Wang, W.U. Wang and C.M. Lieber, Nano Lett. 3 (2003) p.149.10.1021/nl025875l
  • Y. Cui and C.M. Lieber, Science 291 (2001) p.851.10.1126/science.291.5505.851
  • Y. Cui, Q. Wei, H. Park and C.M. Lieber, Science 293 (2001) p.1289.10.1126/science.1062711
  • R. He, D. Gao, R. Fan, A.I. Hochbaum, C. Carraro, R. Maboudian and P. Yang, Adv. Mater. 17 (2005) p.2098.10.1002/(ISSN)1521-4095
  • A.I. Hochbaum, R. Fan, R. He and P. Yang, Nano Lett. 5 (2005) p.457.10.1021/nl047990x
  • A. Colli, A. Fasoli, P. Beecher, P. Servati, S. Pisana, Y. Fu, A.J. Flewitt, W.I. Milne, J. Robertson, C. Ducati, S. De Franceschi, S. Hofmann and A.C. Ferrari, J. Appl. Phys. 102 (2007) p.034302.10.1063/1.2764050
  • M.L. Zhang, K.Q. Peng, X. Fan, J.S. Jie, R.Q. Zhang, S.T. Lee and N.B. Wong, J. Phys. Chem. C 112 (2008) p.4444.10.1021/jp077053o
  • B. Ozdemir, M. Kulakci, R. Turan and H.E. Unalan, Nanotechnology 22 (2011) p.155606.10.1088/0957-4484/22/15/155606
  • S.K. Srivastava, D. Kumar, S.W. Schmitt, K.N. Sood, S.H. Christiansen and P.K. Singh, Nanotechnology 25 (2014) p.175601.10.1088/0957-4484/25/17/175601
  • J. Bauer, F. Fleischer, O. Breitenstein, L. Schubert, P. Werner, U. Gösele and M. Zacharias, Appl. Phys. Lett. 90 (2007) p.012105.10.1063/1.2428402
  • R.R. Kumar, K. N. Rao and A.R. Phani, Mater. Lett. 66 (2012) p.110.10.1016/j.matlet.2011.08.064
  • S.K. Srivastava, D. Kumar, P.K. Singh, M. Kar, V. Kumar and M. Husain, Sol. Energ. Mater. Sol. Cells 94 (2010) p.1506.
  • D. Kumar, S.K. Srivastava, P.K. Singh M. Husain and V. Kumar, Sol. Energ. Mater. Sol. Cells 95 (2011) p.215.
  • G. Akgul, F.A. Akgul, E. Mulazimoglu, H.E. Unalan and R. Turan, J. Phys. D: Appl. Phys. 47 (2014) p.065106.10.1088/0022-3727/47/6/065106
  • M. Kulakci, T. Colakoglu, B. Ozdemir, M. Parlak, H.E. Unalan and R. Turan, Nanotechnology 24 (2013) p.375203.10.1088/0957-4484/24/37/375203
  • T. Mahalingam, V.S. John, S. Rajendran and P.J. Sebastian, Semicond. Sci. Technol. 17 (2002) p.465.10.1088/0268-1242/17/5/310
  • K. Sato, T. Asahi, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, O. Oda, Y. Yamada and T. Taguchi, Phys. Stat. Sol. (a) 180 (2000) p.267.10.1002/(ISSN)1521-396X
  • K. Sato, M. Hanafusa, A. Noda, A. Arakawa, T. Asahi, M. Uchida and O. Oda, IEICE Trans. Electron. E 83-C (2000) p.579.
  • K. Yoshino, A. Memon, M. Yoneta, K. Ohmori, H. Saito and M. Ohishi, Phys. Stat. Sol. (b) 229 (2002) p.977.10.1002/(ISSN)1521-3951
  • C. Winnewisser, P.U. Jepsen, M. Schall, V. Schyja and H. Helm, Appl. Phys. Lett. 70 (1997) p.3069.10.1063/1.119093
  • Q. Guo, Y. Kume, Y. Fukuhara, T. Tanaka, M. Nishio, H. Ogawa, M. Hiratsuka, M. Tani and M. Hangyo, Solid State Commun. 141 (2007) p.188.10.1016/j.ssc.2006.10.023
  • F. Fauzi, D.G. Diso, O.K. Echendu, V. Patel, Y. Purandare, R. Burton and I.M. Dharmadasa, Semicond. Sci. Technol. 28 (2013) p.045005.10.1088/0268-1242/28/4/045005
  • A.A. Ibrahim, N.Z. El-Sayed, M.A. Kaid and A. Ashour, Vacuum 75 (2004) p.189.10.1016/j.vacuum.2004.02.005
  • A. Sweyllam, K. Alfaramawi, S. Abboudy, N.G. Imam and H.A. Motaweh, Thin Solid Films 519 (2010) p.681.10.1016/j.tsf.2010.08.112
  • V. Kumar, V. Kumar and D.K. Dwivedi, Phys. Scr. 86 (2012) p.015604.10.1088/0031-8949/86/01/015604
  • J.H. Chang, T. Takai, B.H. Koo, J.S. Song, T. Handa and T. Yao, Appl. Phys. Lett. 79 (2001) p.785.10.1063/1.1390481
  • Y. Kume, Q. Guo, T. Tanaka, M. Nishio, H. Ogawa and W.J. Shen, J. Cryst. Growth 298 (2007) p.441.10.1016/j.jcrysgro.2006.10.053
  • C.X. Shan, X.W. Fan, J.Y. Zhang, Z.Z. Zhang, X.H. Wang, J.G. Ma, Y.M. Lu, Y.C. Liu, D.Z. Shen, X.G. Kong and G.Z. Zhong, J. Vac. Sci. Technol. A 20 (2002) p.1886.10.1116/1.1507344
  • Z. Zhang, J. Li, H. Zhang, X. Pan and E. Xie, J. Alloy. Compd. 549 (2013) p.88.
  • B. Ghosh, D. Ghosh, S. Hussain, R. Bhar and A.K. Pal, J. Alloy. Compd. 541 (2012) p.104.10.1016/j.jallcom.2012.06.063
  • G.K. Rao, K.V. Bangera and G.K. Shivakumar, Curr. Appl. Phys. 13 (2013) p.298.10.1016/j.cap.2012.08.001
  • K.P. Acharya, A. Erlacher and B. Ullrich, Thin Solid Films 515 (2007) p.4066.10.1016/j.tsf.2006.10.135
  • M. Kulakci, F. Es, B. Ozdemir, H.E. Unalan and R. Turan, IEEE J. Photovoltaics 3 (2013) p.548.10.1109/JPHOTOV.2012.2228300
  • J.C. Tauc, Optical Properties of Solids, F. Abeles, ed., North-Holland Publishing, Amsterdam, 1972.
  • J.C. Tauc and A. Menth, J. Non-Cryst. Solids 8–10 (1972) p.569.
  • A.R. Balu, V.S. Nagarethinam, A. Thayumanavan, K.R. Murali, C. Sanjeeviraja and M. Jayachandran, J. Alloy. Compd. 502 (2010) p.434.10.1016/j.jallcom.2010.04.191
  • G.K. Williamson and W.H. Hall, Acta Metall. 1 (1953) p.22.10.1016/0001-6160(53)90006-6
  • G.B. Williamson and R.C. Smallman, Philos. Mag. 1 (1956) p.34.10.1080/14786435608238074
  • L.S. Yu and Y.F. Li, Physics of Semiconductor Heterojunction, Science Press, Beijing, 1990.
  • Q. Zhang, J. Zhang, M.I.B. Utama, B. Peng, M. de la Mata, J. Arbiol and Q. Xiong, Phys. Rev. B 85 (2012) p.085418.10.1103/PhysRevB.85.085418
  • Q.F. Meng, C.B. Jiang and S.X. Mao, J. Cryst. Growth 310 (2008) p.4481.10.1016/j.jcrysgro.2008.07.111
  • V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka and D. Schikora, Semicond. Sci. Technol. 26 (2011) p.105023.10.1088/0268-1242/26/10/105023
  • D. Kumar, S.K. Srivastava, P.K. Singh, K.N. Sood, V.N. Singh, N. Dilawar and M. Husain, J. Nanopart. Res. 12 (2010) p.2267.10.1007/s11051-009-9795-7
  • F.A. Akgul, G. Akgul, N. Yildirim, H.E. Unalan and R. Turan, Mater. Chem. Phys. 147 (2014) p.987. doi:10.1016/j.matchemphys.2014.06.047p.1.
  • S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed., Wiley, New York, NY (2006).
  • W. Wang, A.S. Lin and J.D. Phillips, Appl. Phys. Lett. 95 (2009) p.011103.
  • A.K. Katiyar, A.K. Sinha, S. Manna, R. Aluguri and S.K. Ray, Phys. Chem. Chem. Phys. 15 (2013) p.20887.10.1039/c3cp53603c

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