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Part B: Condensed Matter Physics

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

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Pages 187-200 | Received 03 Aug 2015, Accepted 06 Oct 2016, Published online: 24 Oct 2016

References

  • K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films, Science 306 (2004), pp. 666–669.10.1126/science.1102896
  • K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, and A.A. Firsov, Two-dimensional gas of massless Dirac fermions in graphene, Nature 438 (2005), pp. 197–200.10.1038/nature04233
  • A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, and A.K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81 (2009), pp. 109–162.10.1103/RevModPhys.81.109
  • D.R. Cooper, B. D’Anjou, N. Ghattamaneni, B. Harack, M. Hilke, A. Horth, N. Majlis, M. Massicotte, E. Whiteway, L. Vandsburger and V. Yu. Experimental review of graphene, ISRN Condens. Matter Phys. 2012 (2012), 56p, Article ID 501686.
  • L. Vicarelli, M.S. Vitiello, D. Coquillat, A. Lombardo, A.C. Ferrari, W. Knap, M. Polini, V. Pellegrini, and A. Tredicucci, Graphene field-effect transistors as room-temperature terahertz detectors, Nat. Mater. 11 (2012), pp. 865–871.10.1038/nmat3417
  • F. Bonaccorso, A. Lombardo, T. Hasan, Z. Sun, L. Colombo, and A.C. Ferrari, Production and processing of graphene and 2d crystals, Mater. Today 15 (2012), pp. 564–589.10.1016/S1369-7021(13)70014-2
  • T. Otsuji, S.A.B. Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhiiand, and V. Ryzhii, Graphene-based devices in terahertz science and technology, J. Phys. D: Appl. Phys. 45 (2012), 303001 (9pp).
  • F. Bonaccorso, Z. Sun, T. Hasan, and A.C. Ferrari, Graphene photonics and optoelectronics, Nat. Photonics 4 (2010), pp. 611–622.10.1038/nphoton.2010.186
  • V.P. Gusynin and S.G. Sharapov, Magnetic oscillations in planar systems with the Dirac-like spectrum of quasiparticle excitations. II. Transport properties, Phys. Rev. B 71 (2005), 125124 (8pp).
  • E.H. Hwang, S. Adam, and S. Das Sarma, Carrier transport in two-dimensional graphene layers, Phys. Rev. Lett. 98 (2007), 186806 (4pp).
  • G. Borghi, M. Polini, R. Asgari, and A.H.M. Donald, Fermi velocity enhancement in monolayer and bilayer graphene, Solid State Commun. 149 (2009), pp. 1117–1122.10.1016/j.ssc.2009.02.053
  • W.A. de Heer, C. Berger, X. Wu, P.N. First, E.H. Conrad, X. Li, T. Li, M. Sprinkle, J. Hass, M.L. Sadowski, M. Potemski, and G. Martinez, Epitaxial graphene, Solid State Commun. 143 (2007), pp. 92–100.10.1016/j.ssc.2007.04.023
  • X. Hong, K. Zou, and J. Zhu, Quantum scattering time and its implications on scattering sources in graphene, Phys. Rev. B 80 (2009), 241415(R)(4pp).
  • K. Zou, X. Hong, and J. Zhu, Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetry and electron-electron interaction, Phys. Rev. B 84 (2011), 085408 (6pp).
  • U. Zeitler, A.J.M. Giesbers, H.J. van Elferen, E.V. Kurganova, A. McCollam, and J.C. Maan, Magneto-transport in the zero-energy Landau level of single-layer and bilayer graphene, J. Phys: Conf. Ser. 334 (2011), 012035 (6pp).
  • E. Tiras, S. Ardali, T. Tiras, E. Arslan, S. Cakmakyapan, O. Kazar, J. Hassan, E. Janzén, and E. Ozbay, Effective mass of electron in monolayer graphene: Electron-phonon interaction, J. Appl. Phys. 113 (2013), 043708 (8pp).
  • A.M.R. Baker, J.A. Alexander-Webber, T. Altebaeumer, S.D. McMullan, T.J.B.M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C.-T. Lin, L.-J. Li, and R.J. Nicholas, Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene, Phys. Rev. B 87 (2013), 045414 (6pp).
  • E. Arslan, S. Çakmakyapan, Ö. Kazar, S. Bütün, S.B. Lişesivdin, N.A. Cinel, G. Ertaş, Ş. Ardalı, E. Tıraş, J. Ul-Hassan, E. Janzén, and E. Özbay, SiC Substrate effects on electron transport in the epitaxial graphene layer, Electron. Mater. Lett. 10 (2014), pp. 387–391.10.1007/s13391-013-3159-2
  • J. Huang, J.A. Alexander-Webber, T.J.B.M. Janssen, A. Tzalenchuk, T. Yager, S. Lara-Avila, S. Kubatkin, R.L. Myers-Ward, V.D. Wheeler, D.K. Gaskill, and R.J. Nicholas, Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphen, J. Phys.: Condens. Matter 27 (2015), 164202 (7pp).
  • A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, and A.K. Geim, Raman spectrum of graphene and graphene layers, Phys. Rev. Lett. 97 (2006), 187401 (4pp).
  • R. Beams, L.G. Cançado, and L. Novotny, Raman characterization of defects and dopants in graphene, J. Phys.: Condens. Matter 27 (2015), 083002 (26pp).
  • I.M. Lifshitz and A.M. Kosevich, Theory of magnetic susceptibility in metals alt low temperatures, Sov. Phys. – JETP 2 (1956), pp. 636–645.
  • T. Ando, A.B. Fowler, and F. Stern, Electronic properties of two-dimensional systems, Rev. Mod. Phys. 54 (1982), pp. 437–673.10.1103/RevModPhys.54.437
  • I. Lo, W.C. Mitchel, R.E. Perrin, R.L. Messham, and M.Y. Yen, Two-dimensional electron gas in GaAs/Al1−xGaxAs heterostructures: Effective mass, Phys. Rev. B 43 (1991), pp. 11787–11790.10.1103/PhysRevB.43.11787
  • J.J. Harris, J.M. Lagemaa, S.J. Battersby, C.M. Hellon, C.T. Foxon, and D.E. Lacklison, Sub-band populations and the spatial distribution of electrons in GaAs/(Al, Ga)As modulation-doped quantum wells, Semicond. Sci. Technol. 3 (1988), pp. 773–780.10.1088/0268-1242/3/8/007
  • S. Elhamri, A. Saxler, W.C. Mitchel, C.R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, and J.S. Speck, Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J. Appl. Phys. 88 (2000), pp. 6583–6588.10.1063/1.1322386
  • A. Bayraklı, E. Arslan, T. Fırat, S. Özcan, Ö. Kazar, H. Çakmak, and E. Özbay, Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures, Phys. Status Solidi (A) 209 (2012), pp. 1119–1123.10.1002/pssa.201127416
  • E.F. Schubert and K. Ploog, Electron subband structures in selectively doped n-AIxGa1-xAs/GaAs Heterostructures, IEEE Trans. Electron Devices 32 (1985), pp. 1868–1873.
  • M.J. Kane, N. Apsley, D.A. Anderson, L.L. Taylor, and T. Kerr, Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions, J. Phys. C: Solid State Phys. 18 (1985), pp. 5629–5636.10.1088/0022-3719/18/29/013
  • F.F. Fang, T.P. Smith III, and S.L. Wright, Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures, Surf. Sci. 196 (1988), pp. 310–315.10.1016/0039-6028(88)90700-5
  • S. Luryi and A. Kastalsky, Anomalous photomagnetoresistance effect in modulation-doped AlGaAs/GaAs heterostructures, Appl. Phys. Lett. 45 (1984), pp. 164–167.10.1063/1.95155
  • S.J. Battersby, F.M. Selten, J.J. Harris, and C.T. Foxon, Magnetoresistance effect in AlGaAs/GaAs two-dimensional electron gas structures at room temperature, Solid-State Electron. 31 (1988), pp. 1083–1088.10.1016/0038-1101(88)90409-1
  • M. van der Burgt, V.C. Karavolas, F.M. Peeters, J. Singleton, R.J. Nicholas, F. Herlach, J.J. Harris, M. van Hove, and G. Borghs, Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer, Phys. Rev. B 52 (1995), pp. 12218–12231.10.1103/PhysRevB.52.12218
  • P.T. Coleridge, Small-angle scattering in two-dimensional electron gases, Phys. Rev. B 44 (1991), pp. 3793–3801.10.1103/PhysRevB.44.3793
  • S. Das, Sarma and Frank Stern, single-particle relaxation time versus scattering time in an impure electron gas, Phys. Rev. B 32 (1985), pp. 8442–8447.
  • J.P. Harrang, R.J. Higgins, R.K. Goodall, P.R. Jay, M. Laviron, and P. Delescluse, Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction, Phys. Rev. B 32 (1985), pp. 8126–8135.10.1103/PhysRevB.32.8126
  • A. Gold, Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas, Phys. Rev. B 38 (1988), pp. 10798–10811.10.1103/PhysRevB.38.10798
  • S. Syed, M.J. Manfra, Y.J. Wang, R.J. Molnar, and H.L. Stormer, Electron scattering in AlGaN/GaN structure, Appl. Phys. Lett. 84 (2004), pp. 1507–1509.10.1063/1.1655704

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