Investigation of V-shaped extended defects in a 4H–SiC epitaxial film

References

• H. Matsunami and T. Kimoto, Step-controlled epitaxial growth of SiC: High quality homoepitaxy, Mater. Sci. Eng. R 20 (1997), pp. 125–166.10.1016/S0927-796X(97)00005-3
   Web of Science ®Google Scholar
• J.Q. Liu, M. Skowronski, C. Hallin, R. Soderholm, and H. Lendenmann, Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions, Appl. Phys. Lett. 80 (2002), pp. 749–751.10.1063/1.1446212
   Web of Science ®Google Scholar
• S. Izumi, H. Tsuchida, I. Kamata, and T. Tawara, Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers, Appl. Phys. Lett. 86 (2005), p. 202108.10.1063/1.1927274
   Web of Science ®Google Scholar
• G. Feng, J. Suda, and T. Kimoto, Characterization of stacking faults in 4H–SiC epilayers by room-temperature microphotoluminescence mapping, Appl. Phys. Lett. 92 (2008), p. 221906.10.1063/1.2937097
   Web of Science ®Google Scholar
• H. Tsuchida, M. Ito, I. Kamata, and M. Nagano, Formation of extended defects in 4H–SiC epitaxial growth and development of a fast growth technique, Phys. Status Solidi B 246 (2009), pp. 1553–1568.10.1002/pssb.v246:7
   Google Scholar
• J. Hassan, A. Henry, I.G. Ivanov, and J.B. Bergman, In-grown stacking faults in 4H–SiC epilayers grown on off-cut substrates, J. Appl. Phys. 105 (2009), pp. 123513.10.1063/1.3139268
   Web of Science ®Google Scholar
• G. Feng, J. Suda, and T. Kimoto, Characterization of major in-grown stacking faults in 4H–SiC epilayers, Physica B 404 (2009), pp. 4745–4748.10.1016/j.physb.2009.08.189
   Web of Science ®Google Scholar
• G. Feng, J. Suda, and T. Kimoto, Triple Shockley type stacking faults in 4H–SiC epilayers, Appl. Phys. Lett. 94 (2009), p. 091910.10.1063/1.3095508
   Google Scholar
• G. Feng, J. Suda, and T. Kimoto, Sources of epitaxial growth-induced stacking faults in 4H–SiC, J. Electron. Mater. 39 (2010), pp. 1166–1169.10.1007/s11664-010-1192-6
   Web of Science ®Google Scholar
• I. Kamata, X. Zhang, and H. Tsuchida, Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers, Appl. Phys. Lett. 97 (2010), pp. 172107.10.1063/1.3499431
   Web of Science ®Google Scholar
• M. Camarda, A. Canino, A. La Mange, F. La Via, G. Feng, T. Kimoto, M. Aoki, and H. Kawanowa, Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H–SiC epitaxial layers, Appl. Phys. Lett. 98 (2011), pp. 051915.10.1063/1.3551542
   Google Scholar
• J. Berechman, S. Chung, G. Chung, E. Sanchez, N.A. Mahadik, R.E. Stahlbush, and M. Skowronski, Trapezoid defect in 4H–SiC epilayers, J. Cryst. Growth 338 (2012), pp. 16–19.10.1016/j.jcrysgro.2011.10.009
   Web of Science ®Google Scholar
• T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odagwara, K. Momose, T. Sato, and M. Kitabatake, Characterization of (4,4)- and (5,3)-type stacking-faults in 4deg.-off 4H–SiC epitaxial wafers by synchrotron X-ray topography and by photo-luminescence spectroscopy, Mater. Sci. Forum 740–742 (2013), pp. 585–588.10.4028/www.scientific.net/MSF.740-742
   Google Scholar
• M. Stockmeier, R. Muller, S.A. Sakwe, P.J. Wellmann, and A. Magerl, On the lattice parameters of silicon carbide, J. Appl. Phys. 105 (2009), pp. 033511.10.1063/1.3074301
   Web of Science ®Google Scholar
• H. Matsuhata, H. Yamaguchi, and T. Ohno, Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H–SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry, Philos. Mag. 92 (2012), pp. 4599–4617.10.1080/14786435.2012.716168
   Web of Science ®Google Scholar
• J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Pederson, and D.J. Singh, Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation, Phys. Rev. B 46 (1992), pp. 6671–6687.10.1103/PhysRevB.46.6671
   PubMed Web of Science ®Google Scholar
• G. Kresse and J. Furthmüller, Efficiency of ab initio total energy calculations for metals and semiconductors using a plane-wave basis set, Comput. Mater. Sci. 6 (1996), pp. 15–50.10.1016/0927-0256(96)00008-0
   Web of Science ®Google Scholar
• H. Matsuhata, H. Yamaguchi, T. Yamashita, T. Tanaka, B. Chen, and T. Sekiguchi, Contrast analysis of Shockley partial dislocations in 4H–SiC observed by synchrotron Berg–-Barrett X-ray topography, Philos. Mag. 94 (2014), pp. 1674–1685.10.1080/14786435.2014.894646
   Web of Science ®Google Scholar
• J.P. Hirth and J. Lothe, Theory of Dislocations, McGraw Hill, New York, 1969, pp. 19.
   Google Scholar