Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

References

• T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, John Wiley & Sons, 2014.
   Google Scholar
• M. Dudley, Y. Chen, X.R. Huang, and R. Ma, Aspects of dislocation behavior in SiC, Mater. Sci. Forum 600–603 (2009), pp. 261–266.
   Google Scholar
• H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.Å. Nilsson, J.P. Bergman, and P. Skytt, Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes, Mater. Sci. Forum 353–356 (2001), pp. 727–730.
   Google Scholar
• J.P. Bergman, H. Lendenmann, P.Å. Nilsson, U. Lindefelt, and P. Skytt, Crystal defects as source of anomalous forward voltage increase of 4H--SiC diodes, Mater. Sci. Forum 353--356 (2001), pp. 299–302.
   Google Scholar
• M. Skowronski and S. Ha, Degradation of hexagonal silicon--carbide-based bipolar devices, J. Appl. Phys. 99 (2006), p. 011101.
   Web of Science ®Google Scholar
• R.E. Stahlbush, Q. Zhang, A. Agarwal, and N.A. Mahadik, Effect of stacking faults originating from half loop arrays on electrical behavior of 10 kV 4H--SiC PiN diodes, Mater. Sci. Forum 717--720 (2012), pp. 387–390.
   Google Scholar
• J.D. Caldwell, R.E. Stahlbush, E.A. Imhoff, K.D. Hobart, M.J. Tadjer, Q. Zhang, and A. Agarwal, Recombination-induced stacking fault degradation of 4H--SiC merged-PiN-Schottky diodes, J. Appl. Phys. 106 (2009), p. 044504.
   Web of Science ®Google Scholar
• H. Fujiwara, H. Naruoka, M. Konishi, K. Hamada, T. Katsuno, T. Ishikawa, Y. Watanabe, and T. Endo, Relationship between threading dislocation and leakage current in 4H--SiC diodes, J. Appl. Phys. 100 (2012), p. 011101.
   Google Scholar
• P. Pirouz, J.L. Demenet, and M.H. Hong, On transition temperatures in the plasticity and fracture of semiconductors, Philos. Mag. A 81 (2001), p. 1207.
   Web of Science ®Google Scholar
• H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J.P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, Dislocation evolution in 4H--SiC epitaxial layers, J. Appl. Phys. 91 (2002), pp. 6354–6360.
   Web of Science ®Google Scholar
• S. Ha, M. Benamara, and M. Skowronski, Core structure and properties of partial dislocations in silicon carbide p-i-n diodes, Appl. Phys. Lett. 83 (2003), pp. 4957–4959.
   Web of Science ®Google Scholar
• H. Jacobson, J.P. Bergman, C. Hallin, E. Janzén, T. Tuomi, and H. Lendenmann, Properties and origins of different stacking faults that cause degradation in SiC PiN diodes, J. Appl. Phys. 95 (2004), pp. 1485–1488.
   Web of Science ®Google Scholar
• S. Ha, M. Skowronski, and H. Lendenmann, Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes, J. Appl. Phys. 96 (2004), pp. 393–398.
   Web of Science ®Google Scholar
• R.E. Stahlbush, M.E. Twigg, J.J. Sumakeris, K.G. Irvine, and P.A. Losee, Mechanisms of stacking fault growth in SiC PiN diodes, Mater. Res. Soc. Symp. Proc. 815 (2004), p. 103.
   Google Scholar
• T. Kimoto, Material science and device physics in SiC technology for high-voltage power devices, Jpn. J. Appl. Phys. 54 (2015), p. 040103.
   Web of Science ®Google Scholar
• A. Tanaka, H. Matsuhata, N. Kawabata, D. Mori, K. Inoue, M. Ryo, T. Fujimoto, T. Tawara, M. Miyazato, M. Miyajima, K. Fukuda, A. Ohtsuki, T. Kato, H. Tsuchida, Y. Yonezawa, and T. Kimoto, Growth of Shockley type stacking faults upon forward degradation in 4H--SiC p-i-n diodes, J. Appl. Phys. 119 (2016), p. 095711.
   Web of Science ®Google Scholar
• H. Matsuhata, H. Yamaguchi, T. Yamashita, T. Tanaka, B. Chen, and T. Sekiguchi, Contrast analysis of Shockley partial dislocations in 4H--SiC observed by synchrotron Berg--Barrett X-ray topography, Philos. Mag. 94 (2014), pp. 1674–1685.
   Web of Science ®Google Scholar
• M. Skowronski, J.Q. Lui, W.M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann, Recombination-enhanced defect motion in forward-biased 4H--SiC p-n diodes, J. Appl. Phys. 92 (2002), pp. 4699–4704.
   Web of Science ®Google Scholar
• G. Feng, J. Suda, and T. Kimoto, Nonradiative recombination at threading dislocations in 4H--SiC epilayers studied by micro-photoluminescence mapping, J. Appl. Phys. 110 (2011), p. 033525.
   Web of Science ®Google Scholar
• I. Kamata, H. Tsuchida, T. Miyanagi, and T. Nakamura, Development of non-destructive in-house observation techniques for dislocations and stacking faults in SiC epilayers, Mater. Sci. Forum 527–529 (2006), pp. 415–418.
   Google Scholar
• H. Tsuchida, M. Ito, I. Kamata, and M. Nagano, Formation of extended defects in 4H--SiC epitaxial growth and development of a fast growth technique, Phys. Status Solid B 246 (2009), pp. 1553–1568.
   Web of Science ®Google Scholar
• T. Rasmussen, K.W. Jacobson, T. Leffers, and B. Pedersen, Simulations of the atomic structure, energetics, and cross slip of screw dislocations in copper, Phys. Rev. B 56 (1997), p. 2997.
   Web of Science ®Google Scholar
• X. Zhang, M. Nagano, and H. Tsuchida, Basal plane dislocations in 4H--SiC epilayers with different dopings, Mater. Sci. Forum 725 (2012), pp. 27–30.
   Google Scholar