Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms

References

• K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, and A.A. Firsov, Electric field effect in atomically thin carbon films, Science. 306 (2004), pp. 666–669.10.1126/science.1102896
   PubMed Web of Science ®Google Scholar
• W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.H. Tan, and G. Eda, Evolution of electronic structure in atomically thin sheets of WS2 and WSe, ACS Nano. 7 (2012), pp. 791–797.
   PubMed Web of Science ®Google Scholar
• H. Shi, R. Yan, S. Bertolazzi, J. Brivio, B. Gao, A. Kis, and L. Huang, Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals, ACS Nano. 7 (2013), pp. 1072–1080.10.1021/nn303973r
   PubMed Web of Science ®Google Scholar
• D. Pacile, J.C. Meyer, Ç.Ö. Girit, and A. Zettl, The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes, Appl. Phys. Lett. 92 (2008), pp. (133107) 1–3.
   Google Scholar
• Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, and M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nat. Nanotechnol. 7 (2012), pp. 699–712.10.1038/nnano.2012.193
   PubMed Web of Science ®Google Scholar
• H.O. Churchill and P. Jarillo-Herrero, Two-dimensional crystals: Phosphorus joins the family, Nat. Nanotechnol. 9 (2014), p. 330.10.1038/nnano.2014.85
   PubMed Web of Science ®Google Scholar
• L. Li, G.J. Ye, V. Tran, R. Fei, G. Chen, H. Wang, and X.H. Chen, Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films, Nat. Nanotechnol. 10 (2015), pp. 608–613.10.1038/nnano.2015.91
   PubMed Web of Science ®Google Scholar
• Y. Maruyama, S. Suzuki, K. Kobayashi, and S. Tanuma, Synthesis and some properties of black phosphorus single crystals, Physica B+ C 105 (1981), pp. 99–102.10.1016/0378-4363(81)90223-0
   Web of Science ®Google Scholar
• G. Fiori, S. Bruzzone, and G. Iannaccone, Very large current modulation in vertical heterostructure graphene/hBN transistors, IEEE Trans. Electron Dev. 60 (2013), pp. 268–273.10.1109/TED.2012.2226464
   Web of Science ®Google Scholar
• D.S. Abergel, J.R. Wallbank, X. Chen, M. Mucha-Kruczyński, and V.I. Fal’ko, Infrared absorption by graphene–hBN heterostructures, New J. Phys. 15 (2013), pp. (123009) 1–7.
   Web of Science ®Google Scholar
• J. Park, J. Lee, L. Liu, K.W. Clark, C. Durand, C. Park, and G. Gu, Spatially resolved one-dimensional boundary states in graphene–hexagonal boron nitride planar heterostructures, Nat. Commun. 5 (2014), pp. 1–6.
   Web of Science ®Google Scholar
• V. Tran, R. Soklaski, Y. Liang, and L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus, Phys. Rev. B 89 (2014), pp. (235319) 1–6.
   Web of Science ®Google Scholar
• Y. Du, C. Ouyang, S. Shi, and M. Lei, Ab initio studies on atomic and electronic structures of black phosphorus, J. Appl. Phys. 107 (2010), pp. (093718) 1–4.
   Web of Science ®Google Scholar
• A.S. Rodin, A. Carvalho, and A.C. Neto, Strain-induced gap modification in black phosphorus, Phys. Rev. Lett. 112 (2014), pp. (176801) 1–5.
   Web of Science ®Google Scholar
• S. Endo, Y. Akahama, S.I. Terada, and S.I. Narita, Growth of large single crystals of black phosphorus under high pressure, Jpn. J. Appl. Phys. 21 (1982), pp. L482–L484.10.1143/JJAP.21.L482
   Web of Science ®Google Scholar
• H. Liu, Y. Du, Y. Deng, and D.Y. Peide, Semiconducting black phosphorus: Synthesis, transport properties and electronic applications, Chem. Soc. Rev. 44 (2015), pp. 2732–2743.10.1039/C4CS00257A
   PubMed Web of Science ®Google Scholar
• M. Köpf, N. Eckstein, D. Pfister, C. Grotz, I. Krüger, M. Greiwe, and T. Hansen, Access and in situ growth of phosphorene-precursor black phosphorus, J. Cryst. Growth 405 (2014), pp. 6–10.10.1016/j.jcrysgro.2014.07.029
   Web of Science ®Google Scholar
• M. Zhao, X. Niu, L. Guan, H. Qian, W. Wang, J. Sha, and Y. Wang, Understanding the growth of black phosphorus crystals, Cryst. Eng. Comm. 18 (2016), pp. 7737–7744.10.1039/C6CE01608A
   Web of Science ®Google Scholar
• M. Zhao, H. Qian, X. Niu, W. Wang, L. Guan, J. Sha, and Y. Wang, Growth mechanism and enhanced yield of black phosphorus microribbons, Cryst. Growth Des. 16 (2016), pp. 1096–1103.10.1021/acs.cgd.5b01709
   Web of Science ®Google Scholar
• T. Nilges, M. Kersting, and T. Pfeifer, A fast low-pressure transport route to large black phosphorus single crystals, J. Solid State Chem. 181 (2008), pp. 1707–1711.10.1016/j.jssc.2008.03.008
   Web of Science ®Google Scholar
• S. Lange, P. Schmidt, and T. Nilges, Au3SnP7@ black phosphorus: An easy access to black phosphorus, Inorganic Chemistry 46 (2007), pp. 4028–4035.10.1021/ic062192q
   PubMed Web of Science ®Google Scholar
• T. Hu and J. Hong, First-principles study of metal adatom adsorption on black phosphorene, J. Phys. Chem. C 119 (2015), pp. 8199–8207.10.1021/acs.jpcc.5b01300
   Web of Science ®Google Scholar
• W. Yu, Z. Zhu, C.Y. Niu, C. Li, J.H. Cho, and Y. Jia, Dilute magnetic semiconductor and half-metal behaviors in 3d transition-metal doped black and blue phosphorenes: a first-principles study, Nanoscale Res Lett. 11 (2016), pp. 1–9.
   PubMed Web of Science ®Google Scholar
• X.B. Li, P. Guo, T.F. Cao, H. Liu, W.M. Lau, and L.M. Liu, Structures, stabilities, and electronic properties of defects in monolayer black phosphorus, Sci. Reports 5 (2015), pp.1–11.
   Web of Science ®Google Scholar
• Version 2016.4 QuantumWise A/S. Available at http://www.quantumwise.com.
   Google Scholar
• M. Brandbyge, J.L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, Density-functional method for nonequilibrium electron transport, Phys. Rev. B 65 (2002), p. B864.10.1103/PhysRevB.65.165401
   Web of Science ®Google Scholar
• J.M. Soler, E. Artacho, J.D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, The SIESTA method for Ab initio order-N materials simulation, J. Phys. Condens. Matter. 14 (2002), pp. 2745–2779.10.1088/0953-8984/14/11/302
   Web of Science ®Google Scholar
• J.P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77 (1996), pp. 3865–3868.10.1103/PhysRevLett.77.3865
   PubMed Web of Science ®Google Scholar
• E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S.B. Lisesivdin, and E. ÿzbay, Effect of substitutional As impurity on electrical and optical properties of β-Si 3 N 4 structure, Mater. Res. Bull. 83 (2016), pp. 128–134.10.1016/j.materresbull.2016.05.017
   Web of Science ®Google Scholar
• B. Sarikavak-Lisesivdin, S.B. Lisesivdin, and E. Ozbay, Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons, Mol. Phys. 110 (2012), pp. 2295–2300.10.1080/00268976.2012.678905
   Web of Science ®Google Scholar
• E. Kutlu, P. Narin, B. Sarikavak-Lisesivdin, S.B. Lisesivdin, and E. Ozbay, Electronic properties of Li-doped zigzag graphene nanoribbons, Physica E. 84 (2016), pp. 543–547.
   Google Scholar
• Y. Du, B. Chang, X. Fu, X. Wang, and M. Wang, Electronic structure and optical properties of zinc-blende GaN, Optik. 123 (2012), pp. 2208–2212.10.1016/j.ijleo.2011.10.017
   Web of Science ®Google Scholar