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Part A: Materials Science

Elastic constants and mechanical stability of InxAl1 − xAsySb1 − y lattice-matched to different substrates

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Pages 2582-2594 | Received 26 Jan 2018, Accepted 13 Apr 2018, Published online: 12 Jul 2018

References

  • I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, Band parameters for III-V compound semiconductors and their alloys, J. Appl. Phys. 89 (2001), pp. 5815–5875. doi: 10.1063/1.1368156
  • S. Adachi, Properties of Group-IV, III-V, and II-VI Semiconductors, Wiley, Chichester, 2005
  • T.F. Kuech, III-V compound semiconductors: Growth and structures, Prog. Cryst. Growth Charact. Mater. 62 (2016), pp. 352–370. doi: 10.1016/j.pcrysgrow.2016.04.019
  • A.R. Degheidy and E.B. Elkenany, Electronic and optical properties of InAs1-xPx alloys under the effect of temperature and pressure, Thin Solid Films 539 (2013), pp. 365–371. doi: 10.1016/j.tsf.2013.05.100
  • A.R. Degheidy, A.S. Elabsy, and E.B. Elkenany, Optoelectronic properties of GaAs1-xPx alloys under the influence of temperature and pressure, Superlattice Microst. 52 (2012), pp. 336–348. doi: 10.1016/j.spmi.2012.04.019
  • K. Shim, H. Rabitz, and P. Dutta, Band gap and lattice constant of GaxIn1-xAsySb1-y, J. Appl. Phys. 88 (2000), pp. 7157–7161. doi: 10.1063/1.1323520
  • K. Kassali and N. Bouarissa, Effect of nitrogen concentration on electronic energy bands of Ga1-xInxNyAs1-y alloys. Microelectron. Eng. 54 (2000), pp. 277–286. doi: 10.1016/S0167-9317(00)00409-3
  • S. Adachi, Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb-Key properties for a variety of the 2-4-μm optoelectronic device applications, J. Appl. Phys. 61 (1987), pp. 4869–4876. doi: 10.1063/1.338352
  • A.R. Degheidy and E.B. Elkenany, Temperature and pressure dependence of the electronic and optical properties of GaxIn1-xAsyP1-y matching different substrates, Physica B. 456 (2015), pp. 213–220. doi: 10.1016/j.physb.2014.08.024
  • S. Adachi, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors, Wiley, Chichester, 2009.
  • N.A. Charykov, A.M. Litvak, K.D. Moiseev, and Y.P. Yakovlev, New semiconductor material AlxInAsySb/InAs: LPE synthesis and properties, Proc. SPIE 1512 (1991), pp.198–203. doi: 10.1117/12.47163
  • R. Magno, E.R. Glaser, B.P. Tinkham, J.G. Champlain, J.B. Boos, M.G. Ancona, and P.M. Campbell, Narrow band gap InGaSb, InAlAsSb alloys for electronic devices, J. Vac. Sci. Technol. B 24 (2006), pp.1622–1625. doi: 10.1116/1.2201448
  • A.N. Semenov, V.A. Solov'ev, B.Y. Meltser, Y.V. Terent'ev, L.G. Prokopova, and S.V. Ivanov, Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary, J. Cryst. Growth 278 (2005), pp.203–208. doi: 10.1016/j.jcrysgro.2005.01.007
  • M. Kudo and T. Mishima, MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs, J. Cryst. Growth 175/176 (1997), pp. 844–848. doi: 10.1016/S0022-0248(96)00935-9
  • L.C. Hirst, M.P. Lumb, J. Abell, C.T. Ellis, J.G. Tischler, I. Vurgaftman, J.R. Meyer, R.J. Walters, and M. González, Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy, J. Appl. Phys. 117 (2015), pp. 215704. doi: 10.1063/1.4921883
  • J. Hernández-Saz, M. Herrera, F.J. Delgado, S. Duguay, T. Philippe, M. Gonzalez, J. Abell, R.J. Walters, and S.I. Molina, Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography, Nanotechnology 27 (2016), pp. 305402. doi: 10.1088/0957-4484/27/30/305402
  • M. Slocum, D.V. Forbes, G.C. Hillier, B.L. Smith, J.G.J. Adams, and S.M. Hubbard, Development of InAlAsSb grown by MOVPE, J. Cryst. Growth 471 (2017), pp. 15–20. doi: 10.1016/j.jcrysgro.2017.04.020
  • J. Tournet, Y. Rouillard, and E. Tournié, Growth and characterization of AlInAsSb layers lattice-matched to GaSb, J. Cryst. Growth 477 (2017), pp. 72–76. doi: 10.1016/j.jcrysgro.2017.04.001
  • M.L. Cohen and J.R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer-Verlag, Berlin, 1988.
  • C. Alibert, A. Joullié, A.M. Joullié, and C. Ance, Modulation-spectroscopy study of the Ga1-xAlxSb band structure, Phys. Rev. B 27 (1983), pp. 4946–4954. doi: 10.1103/PhysRevB.27.4946
  • T. Kobayasi and H. Nara, Properties of nonlocal pseudopotentials of Si and Ge optimized under full interdependence among potential parameters, Bull. Coll. Med. Sci. Tohoku Univ. 2 (1993), pp. 7–16.
  • A. Bechiri and N. Bouarissa, Energy band gaps for the GaxIn1-xAsyP1-y alloys lattice matched to different substrates, Superlattice Microst. 39 (2006), pp. 478–488. doi: 10.1016/j.spmi.2005.11.002
  • N. Bouarissa and M. Boucenna, Band parameters for AlAs, InAs and their ternary mixed crystals, Phys. Scr. 79 (2009), pp. 015701. doi: 10.1088/0031-8949/79/01/015701
  • L. Vegard, The constitution of mixed crystals and the space occupied by atoms, Z. Phys. 5 (1921), pp. 17–26. doi: 10.1007/BF01349680
  • N. Bouarissa, Elastic constants and acoustical phonon properties of GaAsxSb1-x, Mater. Chem. Phys. 100 (2006), pp. 41–47. doi: 10.1016/j.matchemphys.2005.12.004
  • J.M. Baranowski, Bond lengths, force constants and local impurity distortions in semiconductors, J. Phys. C 17 (1984), pp. 6287–6301. doi: 10.1088/0022-3719/17/35/005
  • P. Vogl, Dynamical effective charges in semiconductors: A pseudopotential approach, J. Phys. C 11 (1978), pp. 251–262. doi: 10.1088/0022-3719/11/2/011
  • N. Bouarissa and K. Kassali, Mechanical properties and elastic constants of zinc-blende Ga1-xInxN alloys, Phys. Status Solidi (b) 228 (2001), pp. 663–670; Erratum 231 (2002), pp. 294. doi: 10.1002/1521-3951(200112)228:3<663::AID-PSSB663>3.0.CO;2-8
  • W.A. Harrison, Electronic Structure and the Properties of Solids,, W. H. Freeman and Company, San Francisco, 1980
  • L. Hannachi and N. Bouarissa, Band parameters for cadmium and zinc chalcogenide compounds, Physica B 404 (2009), pp. 3650–3654. doi: 10.1016/j.physb.2009.06.046
  • S. Adachi, Physical Properties of III-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, Wiley, New York, 1992.
  • S. Adachi, Handbook on Physical Properties of Semiconductors, vol.2, III-V Compound Semiconductors, Kluwer Academic Publishers, Boston, 2004
  • C. Xiang-Rong, H. Cui-E, Z. Zhao-Yi and C. Ling-Cang, First-principles calculations for elastic properties of ZnS under pressure, Chin. Phys. Lett. 25 (2008), pp. 1064–1067. doi: 10.1088/0256-307X/25/3/070
  • Y. Oussaifi, A. Ben Fredj, M. Debbichi, N. Bouarissa and M. Said, Calculations of electronic structure, elastic properties for YxGa1-xN and band offsets of YxGa1-xN/ScyGa1-yN heterointerfaces, Semicond. Sci. Technol. 23 (2008), pp. 095019. doi: 10.1088/0268-1242/23/9/095019
  • X.H. Deng, W. Lu, Y.M. Hu, and H.S. Gu, The elastic properties of hexagonal osmium under pressure: The first-principles investigations, Physica B 404 (2009), pp. 1218–1221. doi: 10.1016/j.physb.2008.11.200
  • Z.-J. Wu, E.-J. Zhan, H.-P. Xiang, X.-F. Han, X.-J. Liu, and J. Meng, Crystal structures and elastic properties of superhard IrN2 and IrN3 from first principles, Phys. Rev. B 76 (2007), pp. 054115. doi: 10.1103/PhysRevB.76.054115
  • S. Saib, N. Bouarissa, P. Rodríguez-Hernández, and A. Muñoz, Composition-dependent elastic modulus, vibration frequency and polaron properties of ZnSexTe1-x system, Opt. Mater. 35 (2013), pp. 2303–2308. doi: 10.1016/j.optmat.2013.06.021
  • M. Levinshtein, S. Rumyantsev, and M. Shur (Eds.), Handbook Series on Semiconductor Parameters, vol.2, World Scientific, Singapore, 1999.
  • N. Bouarissa, Compositional dependence of the elastic constants and the Poisson ratio of GaxIn1-xSb, Mater. Sci. Eng. B 100 (2003), pp. 280–285. doi: 10.1016/S0921-5107(03)00116-8
  • P. Ravindran, L. Fast, P.A. Korzhavyi, B. Johansson, J. Wills, and O. Eriksson, Density functional theory for calculation of elastic properties of orthorhombic crystals: Applications to TiSi2, J. Appl. Phys. 84 (1998), pp. 4891–4904. doi: 10.1063/1.368733
  • S.F. Pugh, Relations between the elastic moduli and the plastic properties of polycrystalline pure metals, Philos. Mag. 45 (1954), pp. 823–843. doi: 10.1080/14786440808520496
  • Z. Sun, D. Music, R. Ahuja, and J.M. Schneider, Theoretical investigations of the bonding and elastic properties of nanolayered ternary nitrides, Phys. Rev. B 71 (2005), pp. 193402. doi: 10.1103/PhysRevB.71.193402
  • N. Bouarissa and S. Saib, Elastic modulus, optical phonon modes and polaron properties in Al1-xBxN alloys, Curr. Appl. Phys. 13 (2013), pp. 493–499. doi: 10.1016/j.cap.2012.09.021

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