Structural characterisation and thermal stability of SnSe\GaSb stacked films

References

• Z.D. Stephens, S.Y. Lee, F. Faghri, R.H. Campbell, C. Zhai, M.J. Efron, R. Iyer, M.C. Schatz, S. Sinha, and G.E. Robinson, Big data: Astronomical or genomical? PLoS Biol. 13 (2015), p. e1002195.
   PubMed Web of Science ®Google Scholar
• G.I. Meijer, Who wins the nonvolatile memory race? Science 319 (2008), pp. 1625–1626.
   PubMed Web of Science ®Google Scholar
• S. Raoux, G.W. Burr, M.J. Breitwisch, C.T. Rettner, Y.-C. Chen, R.M. Shelby, M. Salinga, D. Krebs, S.-H. Chen, H.-L Lung, et al., Phase-change random access memory: A scalable technology, IBM J. Res Dev. 52 (2008), pp. 465–479.
   Web of Science ®Google Scholar
• H. Hayat, K. Kohary, and C.D. Wright, Can conventional phase-change memory devices be scaled down to single-nanometre dimensions? Nanotechnology 28 (2017), p. 035202.
   PubMed Web of Science ®Google Scholar
• G.W. Burr, M.J. Brightsky, A. Sebastian, H.-Y. Cheng, J.-Y. Wu, S. Kim, N.E. Sosa, N. Papandreou, H.-L. Lung, H. Pozidis, et al., Recent progress in phase-change memory technology, IEEE J. Emerg. Select. Top. Cir. Syst. 6 (2016), p. 146–162.
   Web of Science ®Google Scholar
• G. Bruns, P. Merkelbach, C. Schlockermann, M. Salinga, M. Wuttig, T.D. Happ, J.B. Philipp, and M. Kund, Nanosecond switching in GeTe phase change memory cells, Appl. Phys. Lett. 95 (2009), p. 043108.
   Web of Science ®Google Scholar
• R. Merritt, 3D Xpoint steps into the light. Available at http://www.eetimes.com/document.asp?doc_id= 1328682 (2016).
   Google Scholar
• A. Akel, A.M. Caulfield, T.I. Mollov, R.K. Gupta, and S. Swanson, Onyx: A prototype phase change memory storage array, Proceedings of the 3rd USENIX conference on hot topics in storage and file systems, Portland, 2011.
   Google Scholar
• G. De Sandre, L. Bettini, A. Pirola, L. Marmonier, M. Passoti, M. Borghi, P. Mattavelli, P. Zuliani, L. Scotti, G. Mastracchio, et al., A 4 Mb LV MOS-selected embedded phase change memory in 90 nm standard CMOS technology, IEEE J Solid-State Circ. 46 (2011), pp. 52–63.
   Web of Science ®Google Scholar
• F. Xiong, A.D. Liao, D. Estrada, and E. Pop, Low-power switching of phase-change materials with carbon nanotube electrodes, Science 332 (2011), pp. 568–570.
   PubMed Web of Science ®Google Scholar
• M. Stanisavljevic, H. Pozidis, A. Athmanathan, N. Papandreou, T. Mittelholzer, and E. Eleftheriou, Demonstration of reliable triple-level-cell (TLC) phase-change memory, Proceedings of international memory workshop, Paris, France, 2016.
   Google Scholar
• J. Orava and A.L. Greer, Fast and slow crystal growth kinetics in glass-forming melts, J. Chem. Phys. 140 (2014), p. 214504.
   PubMed Web of Science ®Google Scholar
• D. Lencer, M. Salinga, B. Grabowski, T. Hickel, J. Neugebauer, and M. Wuttig, A map for phase-change materials, Nat. Mater. 7 (2008), pp. 972–977.
   PubMed Web of Science ®Google Scholar
• W.J. Wang, L.P. Shi, R. Zhao, K.G. Lim, H.K. Lee, T.C. Chong, and Y.H. Wu, Fast phase transitions induced by picosecond electrical pulses on phase change memory cells, Appl. Phys. Lett. 93 (2008), p. 043121.
   Web of Science ®Google Scholar
• B. Gleixner, A. Pirovano, J. Sarkar, F. Ottogalli, E. Tortorelli, M. Tosi, and R. Bez, Data retention characterization of phase-change memory arrays, Proceedings of 45th annual IEEE international reliability physics symposium, Pheonix, 2007, pp. 542–546.
   Google Scholar
• B. Liu, T. Zhang, J. Xia, Z. Song, S. Feng, and B. Chen, Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory, Semicond. Sci. Technol. 19 (2004), pp. L61–L64.
   Web of Science ®Google Scholar
• T. Nirschl, J.B. Philipp, T.D. Happ, G.W. Burr, B. Rajendran, M.-H. Lee, A. Schrott, M. Yang, M. Breitwisch, C.-F. Chen, et al., Write strategies for 2 and 4-bit multi-level phase-change memory, Proceedings of IEEE international electron devices meeting, Washington, DC, 2007, pp. 461–467.
   Google Scholar
• H.-L. Lung, M. Breitwisch, T. Happ, and C. Lam, Phase-change memory: present and future, Proceedings of 2nd International conference memory technology design, Giens, France, 2007, pp. 35–38.
   Google Scholar
• N. Papandreou, H. Pozidis, T. Mittelholzer, G.F. Close, M. Breitwisch, C. Lam, and E. Eleftheriou, Drift-Tolerant multilevel phase-change memory, IEEE international memory workshop (IMW), Monterey, 2011.
   Google Scholar
• M. Rütten, M. Kaes, A. Albert, M. Wuttig, and M. Salinga, Relation between bandgap and resistance drift in amorphous phase change materials, Sci. Rep. 5 (2015), p. 17362.
   PubMed Web of Science ®Google Scholar
• Y.-F. Lai, J. Feng, B.-W. Qiao, Y.-F. Cai, Y.-Y. Lin, T.-A. Tang, B.C. Cai, and B. Chen, Stacked chalcogenide layers used as multi-state storage medium for phase change memory, Appl. Phys. A, Mater. Sci. Process. 84 (2006), pp. 21–25.
   Web of Science ®Google Scholar
• H.K. Ande, P. Busa, M. Balasubramanian, K.A. Campbell, and R.J. Baker, A new approach to the design, fabrication, and testing of chalcogenide-based multi-state phase-change nonvolatile memory, 51st IEEE Midwest symposium on circuits and systems, Knoxville, 2008.
   Google Scholar
• F. Rao, Z. Song, M. Zhong, L. Wu, G. Feng, B. Liu, S. Feng, and B. Chen, Multilevel data storage characteristics of phase change memory cell with doublelayer chalcogenide films (Ge2Sb2Te5 and Sb2Te3), Jpn. J. Appl. Phys. 46 (2007), p. L25–L27.
   Web of Science ®Google Scholar
• Y. Zhang, J. Feng, Y. Zhang, Z. Zhang, Y. Lin, T. Tang, B. Cai, and B. Chen, Multi-bit storage in reset process of phase change access memory (PRAM), Phys. Stat. Sol., Rapid Res. Lett. 1 (2007), pp. R28–R30.
   Web of Science ®Google Scholar
• A. Velea, C.N. Borca, G. Socol, A.C. Galca, D. Grolimund, M. Popescu, and J.A. van Bokhoven, In-situ crystallization of GeTe\GaSb phase change memory stacked films, J. App. Phys. 116 (2014), p. 234306.
   Web of Science ®Google Scholar
• S. Raoux, A.K. Konig, H.-Y. Cheng, D. Garbin, R.W. Cheek, J.L. Jordan-Sweet, and M. Wuttig, Phase transitions in Ga–Sb phase change alloys, Phys. Status Solidi B 249 (2012), pp. 1999–2004.
   Google Scholar
• M. Putero, M.-V. Coulet, T. Ouled-Khachroum, Phase transition in stoichiometric GaSb thin films: Anomalous density change and phase segregation. Appl. Phys. Lett. 103 (2013), pp. 231912.
   Web of Science ®Google Scholar
• D.J. Gravesteijn, Materials developments for write-once and erasable phase-change optical recording, Appl. Opt. 27 (1988), pp. 736–738.
   PubMed Web of Science ®Google Scholar
• K.-M. Chung, D. Wamwangi, M. Woda, M. Wuttig, and W. Bensch, Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications, J. Appl. Phys. 103 (2008), p. 083523.
   Web of Science ®Google Scholar
• C.N. Borca, D. Grolimund, M. Willimann, B. Meyer, K. Jefimovs, J. Vila-Comamala, and C. David, The microXAS beamline at the Swiss light source: towards nano-scale imaging, J. Phys. Conf. Ser. 186 (2009), p. 012003.
   Google Scholar
• See http://xrdua.ua.ac.be/ for XRDUA, 2D Powder-XRD Analysis.
   Google Scholar
• B. Ravel and M. Newville, ATHENA, ARTEMIS, HEPHAESTUS: data analysis for X-ray absorption spectroscopy using IFEFFIT, J. Synchrotron Radiat. 12 (2005), 537–541.
   PubMed Web of Science ®Google Scholar
• M.H.R. Lankhorst, Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials, J. Non-Cryst. Solids 297 (2002), pp. 210–219.
   Web of Science ®Google Scholar
• J. Kalb, F. Spaepen, and M. Wuttig, Calorimetric measurements of phase transformations in thin films of amorphous Te alloys used for optical data storage, J. Appl. Phys. 93 (2003), p. 2389–2393.
   Web of Science ®Google Scholar
• E.A. Davis and N.F. Mott, Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors, Philos. Mag. 22 (1970), pp. 0903–0922.
   Web of Science ®Google Scholar
• G.E. Jellison and F.A. Modine, Parameterization of the optical functions of amorphous materials in the interband region, Appl. Phys. Lett. 69 (1996), p. 371–373.
   Web of Science ®Google Scholar
• G.E. Jellison and F.A. Modine, Erratum: “Parameterization of the optical functions of amorphous materials in the interband region”, Appl. Phys. Lett. 69 (1996), p. 2137–2137.
   Web of Science ®Google Scholar
• F.M. Bai, H.W. Zhang, S. Gupta, S. Kurinec, Investigation of phase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe chalcogenide films, Mater. Sci. Forum 687 (2011), pp. 677–683.
   Google Scholar
• J. Dik, K. Janssens, G. Van Der Snickt, L. van der Loeff, K. Rickers, and M. Cotte, Visualization of a lost painting by Vincent van Gogh using synchrotron radiation based X-ray fluorescence elemental mapping, Anal. Chem. 80 (2008), pp. 6436–6442.
   PubMed Web of Science ®Google Scholar
• M. Roy, S.J. Gurman, and G. van Dorssen, The amplitude reduction factor in EXAFS, J. Phys. IV 7 (1997), pp. 151–152.
   Google Scholar
• A.V. Sapelkin, S.C. Bayliss, A.G. Lyapin, V.V. Brazhkin, and A.J. Dent, Structure of bulk amorphous GaSb: A temperature-dependent EXAFS study, Phys. Rev. B 56 (1997), p. 11531–11535.
   Web of Science ®Google Scholar
• C. Mihai and A. Velea, Phase change cellular automata modeling of GeTe, GaSb and SnSe stacked chalcogenide films, Modelling Simul. Mater. Sci. Eng. 26 (2018), p. 045006.
   Web of Science ®Google Scholar
• A. Velea, F. Sava, G. Socol, A.M. Vlaicu, C. Mihai, A. Lőrinczi, and I.D. Simandan, Thermal stability of phase change GaSb\GeTe, SnSe\GeTe and GaSb\SnSe double stacked films revealed by X-ray reflectometry and X-ray diffraction, J. Non-Cryst. Solids 492 (2018), pp. 11–17.
   Web of Science ®Google Scholar