Electronic properties, optical spectra and magnetisation of MnAs material under compression

References

• H. Ohno, Making nonmagnetic semiconductors ferromagnetic. Science 281 (1998), pp. 951–956. doi: 10.1126/science.281.5379.951
   PubMed Web of Science ®Google Scholar
• S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnar, M.L. Roukes, A.Y. Chtchelkanova, and D.M. Treger, Spintronics: A spin-based electronics Vision for the Future. Science 294 (2001), pp. 1488–1495. doi: 10.1126/science.1065389
   PubMed Web of Science ®Google Scholar
• D.D. Awschalom and M.E. Flatté, Challenges for semiconductor spintronics. Nat. Phys. 3 (2007), pp. 153–159. doi: 10.1038/nphys551
   Web of Science ®Google Scholar
• I. Žutić, J. Fabian, and S. Das Sarma, Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76 (2004), pp. 323–410. doi: 10.1103/RevModPhys.76.323
   Web of Science ®Google Scholar
• N. Bouarissa, S. Zerroug, S.A. Siddiqui, and A. Hajry, Lattice properties, energy states and optical spectra of MnxGa1−xAs magnetic semiconductors. Superlatt. Microstruct. 64 (2013), pp. 237–244. doi: 10.1016/j.spmi.2013.09.033
   Web of Science ®Google Scholar
• A. Khaldi, N. Bouarissa, and L. Tabourot, First-principles study of pressure dependence of optical spectra of MnS. J. Supercond. Nov. Magn. 31 (2018), pp. 1643–1647. doi: 10.1007/s10948-017-4377-x
   Web of Science ®Google Scholar
• R. de Paiva, J.L.A. Alves, R.A. Nogueira, J.R. Leite, and L.M.R. Scolfaro, Cubic binary compounds MnN and MnAs and diluted magnetic Ga1-xMnxN semiconductor alloys: a first-principle study. J. Magn. Magn. Mater. 288 (2005), pp. 384–396. doi: 10.1016/j.jmmm.2004.09.124
   Web of Science ®Google Scholar
• S. Sanvito and N.A. Hill, Ground state of half-metallic zinc-blende MnAs. Phys. Rev. B 62 (2000), pp. 15553–15560. doi: 10.1103/PhysRevB.62.15553
   Web of Science ®Google Scholar
• R. de Paiva, J.L.A. Alves, R.A. Nogueira, J.R. Leite, and L.M.R. Scolfaro, First-principles materials study for spintronics: MnAs and MnN. Braz. J. Phys. 34 (2004), pp. 568–570. doi: 10.1590/S0103-97332004000400008
   Web of Science ®Google Scholar
• P. Ravindran, A. Delin, P. James, B. Johansson, J.M. Wills, R. Ahuja, and O. Eriksson, Magnetic, optical, and magneto-optical properties of MnX(X=As, Sb, or Bi) from full-potential calculations. Phys. Rev. B 59 (1999), pp. 15680–15693. doi: 10.1103/PhysRevB.59.15680
   Web of Science ®Google Scholar
• A. Continenza, S. Picozzi, W.T. Geng, and A.J. Freeman, Coordination and chemical effects on the structural, electronic, and magnetic properties in Mn pnictides. Phys. Rev. B 64 (2001), pp. 085204–085204. doi: 10.1103/PhysRevB.64.085204
   Google Scholar
• K. Maki, T. Kaneko, H. Hiroyoshi, and K. Kamigaki, Crystalline and magnetic properties of MnAs under pressure. J. Magn. Magn. Mater. 177–181 (1998), pp. 1361–1362. doi: 10.1016/S0304-8853(97)00490-3
   Google Scholar
• F. Moradiannejad, S.J. Hashemifar, and H. Akbarzadeh, The effect of pressure on electronic and magnetic properties of MnAs crystal. J. Comput. Meth. Phys. (2013), pp. 6–1-6. Article ID 879164.
   Google Scholar
• L. Tocado, E. Palacios, and R. Burriel, Entropy determinations and magnetocaloric parameters in systems with first-order transitions: Study of MnAs. J. Appl. Phys. 105 (2009), pp. 093918–093918. doi: 10.1063/1.3093880
   Web of Science ®Google Scholar
• M. Arejdal, L. Bahmad, and A. Benyoussef, The calculated magnetic properties and magneto-caloric effect in compound MnAs. J. Supercond. Nov. Magn. 30 (2017), pp. 1565–1574. doi: 10.1007/s10948-016-3954-8
   Google Scholar
• K. Daviau and K.K.M. Lee, High-pressure, high-temperature behavior of silicon carbide: A review. Crystals. (Basel) 8 (2018), pp. 217–217. and references therein. doi: 10.3390/cryst8050217
   Web of Science ®Google Scholar
• S. Daoud, N. Bioud, and N. Bouarissa, Structural phase transition, elastic and thermal properties of boron arsenide: pressure-induced effects. Mater. Sci. Semicond. Process. 31 (2015), pp. 124–130. doi: 10.1016/j.mssp.2014.11.024
   Web of Science ®Google Scholar
• F.J. Manjón and D. Errandonea, Pressure-induced structural phase transitions in materials and earth sciences. Phys. Status Solidi B 246 (2009), pp. 9–31. doi: 10.1002/pssb.200844238
   Google Scholar
• S. Saib, N. Bouarissa, P. Rodríguez-Hernández, and A. Muñoz, Structural and dielectric properties of AlN under pressure. Phys. B 403 (2008), pp. 4059–4062. doi: 10.1016/j.physb.2008.08.007
   Web of Science ®Google Scholar
• A.R. Degheidy, A.S. Elabsy, and E.B. Elkenany, Optoelectronic properties of GaAs1−xPx alloys under the influence of temperature and pressure. Superlattice. Microstruct. 52 (2012), pp. 336–348. doi: 10.1016/j.spmi.2012.04.019
   Web of Science ®Google Scholar
• N. Bouarissa, Electron and positron energy levels and deformation potentials in group-III nitrides. Phys. Stat. Solidi B 231 (2002), pp. 391–402. doi: 10.1002/1521-3951(200206)231:2<391::AID-PSSB391>3.0.CO;2-J
   Web of Science ®Google Scholar
• G.J. Ackland, High-pressure phases of group IV and III-V semiconductors. Rep. Prog. Phys. 64 (2001), pp. 483–516. and references therein. doi: 10.1088/0034-4885/64/4/202
   Web of Science ®Google Scholar
• F. Benmakhlouf, A. Bechiri, and N. Bouarissa, Zinc-blende ZnS under pressure: predicted electronic properties. Solid-State Electron. 47 (2003), pp. 1335–1338. doi: 10.1016/S0038-1101(03)00009-1
   Web of Science ®Google Scholar
• R. Prasad, Electronic structure of materials, CRC Press, Taylor & Francis Group, Boca Raton, 2014.
   Google Scholar
• N. Bouarissa, Effective masses of electrons, heavy holes and positrons in quasi-binary (GaSb)1−x(InAs)x crystals. J. Phys. Chem. Solids 67 (2006), pp. 1440–1443. doi: 10.1016/j.jpcs.2006.01.111
   Web of Science ®Google Scholar
• Ü Özgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, and H. Morkoç, A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98 (2005), pp. 041301–1-103. doi: 10.1063/1.1992666
   Web of Science ®Google Scholar
• N. Bouarissa, Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs. Phys. Lett. A 245 (1998), pp. 285–291. doi: 10.1016/S0375-9601(98)00403-4
   Web of Science ®Google Scholar
• M.L. Cohen and J.R. Chelikowsky, Electronic structure and optical properties of semiconductors, Springer-Verlag, Berlin, 1989.
   Google Scholar
• S. Adachi, Properties of Group-IV, III-V, and II-VI semiconductors, Chichester, Wiley, 2005.
   Google Scholar
• N. Bouarissa, S. Bougouffa, and A. Kamli, Energy gaps and optical phonon frequencies in InP1−xSbx. Semicond. Sci. Technol. 20 (2005), pp. 265–270. doi: 10.1088/0268-1242/20/3/002
   Web of Science ®Google Scholar
• S. Adachi, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors, Wiley, Chichester, 2009.
   Google Scholar
• F. Mezrag, W. Kara Mohamed, and N. Bouarissa, The effect of zinc concentration upon optical and dielectric properties of Cd1−xZnxSe. Phys. B 405 (2010), pp. 2272–2276. doi: 10.1016/j.physb.2010.02.024
   Google Scholar
• Y.C. Cheng, X.L. Wu, J. Zhu, L.L. Xu, S.H. Li, and P.K. Chu, J. Appl. Phys. 103 (2008), pp. 073707–073707. doi: 10.1063/1.2903138
   Google Scholar
• N. Bouarissa, Pressure dependence of optoelectronic properties of GaN in the zinc-blende structure. Mater. Chem. Phys. 73 (2002), pp. 51–56. doi: 10.1016/S0254-0584(01)00347-9
   Web of Science ®Google Scholar
• M.B. Askari, A.F. Kalourazi, M. Seifi, S.S. Shahangian, N. Askari, and T.J. Manjili, Hydrothermal Synthesis of molybdenum disulfide (MoS2) and study of structure, optical, electrical and high Antibacterial properties. Optik. (Stuttg) 174 (2018), pp. 154–162. doi: 10.1016/j.ijleo.2018.08.035
   Web of Science ®Google Scholar
• Z.-Y. Feng and J.-M. Zhang, Structural, electronic, magnetic and optical properties of semiconductor Zn1−xMoxTe compound. J. Phys. Chem. Solids 114 (2018), pp. 240–245. doi: 10.1016/j.jpcs.2017.10.013
   Web of Science ®Google Scholar
• A. Bouarissa, A. Gueddim, N. Bouarissa, and S. Djellali, Band structure and optical properties of polyaniline polymer material. Polymer Bull 75 (2018), pp. 3023–3033. doi: 10.1007/s00289-017-2189-6
   Web of Science ®Google Scholar
• H. Ohno, Properties of ferromagnetic III–V semiconductors. J. Magn. Magn. Mater. 200 (1999), pp. 110–129. doi: 10.1016/S0304-8853(99)00444-8
   Web of Science ®Google Scholar
• Y. Harrache and N. Bouarissa, First-principles investigation of electronic structure and derived structural and magnetic properties of HgTe alloyed with Mn transition metal. Solid State Commun. 295 (2019), pp. 26–31. doi: 10.1016/j.ssc.2019.04.002
   Web of Science ®Google Scholar
• A. Bouarissa, A. Layadi, and H. Maghraoui-Meherzi, Experimental study of the diamagnetism and the ferromagnetism in MoS2 thin films. Appl. Phys. A 126 (2020), pp. 93–93. doi: 10.1007/s00339-020-3286-1
   Web of Science ®Google Scholar
• P. Hohenberg and W. Kohn, Inhomogeneous electron gas. Phys. Rev. 136 (1964), pp. B864–B871. doi: 10.1103/PhysRev.136.B864
   Web of Science ®Google Scholar
• W. Kohn and L.J. Sham, Self-consistent equations including exchange and correlation effects. Phys. Rev. 140 (1965), pp. A1133–A1138. doi: 10.1103/PhysRev.140.A1133
   Web of Science ®Google Scholar
• P. Blaha, K. Schwarz, G.K.H. Madsen, D. Kvasnicka and J. Luitz, WIEN2k Code, An Augmented Plane Wave Plus Local Orbital’s Program for Calculating Crystal Properties, Vienna University of Technology, Vienna, 2014.
   Google Scholar
• F. Tran and P. Blaha, Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys. Rev. Lett. 102 (2009), pp. 226401–226401. doi: 10.1103/PhysRevLett.102.226401
   PubMed Web of Science ®Google Scholar
• A. El Hassasna, A. Bechiri, and N. Bouarissa, Structural parameters, energy gaps and density of states of AlAs1−xBixsemiconducting ternary alloys. Mater. Res. Express 6 (2019), pp. 085915–1-13. doi: 10.1088/2053-1591/ab2697
   Web of Science ®Google Scholar
• H.J. Monkhorst and J.D. Pack, Special points for Brillouin-zone integrations. Phys. Rev. B 13 (1976), pp. 5188–5192. doi: 10.1103/PhysRevB.13.5188
   Web of Science ®Google Scholar
• J.D. Pack and H.J. Monkhorst, “Special points for Brillouin-zone integrations”—a reply. Phys. Rev. B 16 (1977), pp. 1748–1749. doi: 10.1103/PhysRevB.16.1748
   Web of Science ®Google Scholar
• L. Hnamte, H. Joshi, and R. K. Thapa, Electronic and optical properties of double Perovskite oxide Pb2ScSbO6: A first principles approach. IOSR J. Appl. Phys 10 (2018), pp. 39–44.
   Google Scholar
• A. Delin, O. Eriksson, R. Ahuja, B. Johansson, M.S.S. Brooks, T. Gasche, S. Auluck, and J.M. Wills, Optical properties of the group-IVB refractory metal compounds. Phys. Rev. B 54 (1996), pp. 1673–1681. doi: 10.1103/PhysRevB.54.1673
   Web of Science ®Google Scholar
• S. Zerroug, F. Ali Sahraoui, and N. Bouarissa, Ab initio calculations of yttrium nitride: structural and electronic properties. Appl. Phys. A 97 (2009), pp. 345–350. doi: 10.1007/s00339-009-5243-x
   Web of Science ®Google Scholar
• A. Bechiri, F. Benmakhlouf, and N. Bouarissa, Band structure of III–V ternary semiconductor alloys beyond the VCA. Mater. Chem. Phys. 77 (2003), pp. 507–510. doi: 10.1016/S0254-0584(02)00124-4
   Web of Science ®Google Scholar
• K. Kassali and N. Bouarissa, Effect of nitrogen concentration on electronic energy bands of Ga1−xInxNyAs1−y alloys. Microelectron. Eng. 54 (2000), pp. 277–286. doi: 10.1016/S0167-9317(00)00409-3
   Web of Science ®Google Scholar
• S. Ozaki and S. Adachi, Optical constants of ZnSxSe1−xternary alloys. J. Appl. Phys. 75 (1994), pp. 7470–7475. doi: 10.1063/1.356617
   Web of Science ®Google Scholar
• K.I. Suzuki and S. Adachi, Optical constants of CdxZn1-xSe ternary alloys. J. Appl. Phys. 83 (1998), pp. 1018–1022. doi: 10.1063/1.366791
   Web of Science ®Google Scholar
• N. Bouarissa, Energy gaps and refractive indices of AlxGa1−xAs. Mater. Chem. Phys. 72 (2001), pp. 387–394. doi: 10.1016/S0254-0584(01)00304-2
   Web of Science ®Google Scholar
• N. Bouarissa, Optoelectronic properties of InAs1−xPx semiconducting alloys. Mater. Sci. Eng. B 86 (2001), pp. 53–59. doi: 10.1016/S0921-5107(01)00658-4
   Google Scholar
• N.M. Ravindra, P. Ganapathy, and J. Choi, Energy gap–refractive index relations in semiconductors – An overview. Infrared Phys. Technol. 50 (2007), pp. 21–29. doi: 10.1016/j.infrared.2006.04.001
   Web of Science ®Google Scholar
• M. Rizwan, I. Haider, T. Mahmood, M. Shakil, M. ul Hassan, J.H. -Bo, and C.C. Bao, First principles investigation of electronic and optical properties of AgAlO2. Chin. J. Phys. 56 (2018), pp. 2186–2190. doi: 10.1016/j.cjph.2018.09.018
   Web of Science ®Google Scholar
• N. Bouarissa and M. Boucenna, Band parameters for AlAs, InAs and their ternary mixed crystals. Phys. Scr. 79 (2009), pp. 015701–1-7. doi: 10.1088/0031-8949/79/01/015701
   Web of Science ®Google Scholar
• P.Y. Yu and M. Cardona, Fundamentals of Semiconductors, Physics and Materials Properties, Springer-Verlag, Berlin Heidelberg, 1996.
   Google Scholar
• A. Gueddim, S. Zerroug, and N. Bouarissa, Optical characteristics of ZnTe1−xOx alloys from first-principles calculations. J. Lumin. 135 (2013), pp. 243–247. doi: 10.1016/j.jlumin.2012.10.004
   Web of Science ®Google Scholar
• H. Ehrenreich, Optical properties and electronic structure of metals and alloys, L. Abelés, ed., Wiley, New York, 1966. pp. 115.
   Google Scholar
• N.B. Ekreem, A.G. Olabi, T. Prescott, A. Rafferty, and M.S.J. Hashmi, An overview of magnetostriction, its use and methods to measure these properties. J. Mater. Process. Technol. 191 (2007), pp. 96–101. doi: 10.1016/j.jmatprotec.2007.03.064
   Web of Science ®Google Scholar