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Part B: Condensed Matter Physics

Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects

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Pages 1989-2001 | Received 28 Feb 2022, Accepted 24 Jun 2022, Published online: 24 Jul 2022

References

  • S. Dalgic and B. Ozkapi, Electric field and concentration effects on the binding energy of a non-hydrogenic donor impurity in a finite cylindrical quantum well wire. J. Optoelectron. Adv. Mater 11 (2009), pp. 2120–2125.
  • S. Aktas, F.K. Boz and S.S. Dalgic, Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire. Phys. E: Low-Dimens. Syst. Nanostruct 28 (2005), pp. 96–105.
  • F.K. Boz and S. Aktas, Magnetic field effect on the binding energy of a hydrogenic impurity in coaxial GaAs/AlxGa1− xAs quantum well wires. Superlattices Microstruct. 37 (2005), pp. 281–291.
  • H. El Ghazi and A. Jorio, Temperature dependence of interband recombination energy in symmetric (In, Ga) N spherical quantum dot-quantum well. Phys. B: Condens. Matter 432 (2014), pp. 64–66.
  • A. Elabsy, Effect of the gamma-X crossover on the binding energies of confined donors in single GaAs/AlxGa1-xAs quantum-well microstructures. J. Condens. Matter Phys 6 (1994), pp. 10025.
  • P. Nithiananthi and K. Jayakumar, Diamagnetic susceptibility of hydrogenic donor impurity in low-dimensional semiconducting systems. Solid State Commun. 137 (2006), pp. 427–430.
  • R. Khordad, Effect of temperature on the binding energy of excited states in a ridge quantum wire. Phys. E: Low-Dimens. Syst. Nanostruct 41 (2009), pp. 543–547.
  • M. Hu, Z. Jia, H. Wang and Q. Gong,The effect of hydrostatic pressure and temperature on impurity states in a cylindrical quantum dot. J. Comput. Electron 20 (2021), pp. 1–10.
  • A. Sali, M. Fliyou, H. Satori and H. Loumrhari, The effect of a strong magnetic field on the binding energy and the photoionization process in quantum-well wires. J. Phys. Chem. Solids 64 (2003), pp. 31–41.
  • G. Bastard, Hydrogenic impurity states in a quantum well: A simple model. Phys. Rev. B 24 (1981), pp. 4714.
  • E. Iqraoun, A. Sali, A. Rezzouk, E. Feddi, F. Dujardin, M. Mora-Ramos and C. Duque, Donor impurity-related photoionization cross section in GaAs cone-like quantum dots under applied electric field. Philos. Mag 97 (2017), pp. 1445–1463.
  • L. Aderras, A. Bah, E. Feddi, F. Dujardin and C. Duque, Stark-shift of impurity fundamental state in a lens shaped quantum. Phys. E: Low-Dimens. Syst. Nanostruct 89 (2017), pp. 119–123.
  • A. El Aouami, E. Feddi, A. Talbi, F. Dujardin and C. Duque, Electronic state and photoionization cross section of a single dopant in GaN/InGaN core/shell quantum dot under magnetic field and hydrostatic pressure. Appl. Phys. A 124 (2018), pp. 1–11.
  • H. El Ghazi, A. Jorio and I. Zorkani, Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs. Phys. B: Condens. Matter 410 (2013), pp. 49–52.
  • A. Sali and H. Satori, The combined effect of pressure and temperature on the impurity binding energy in a cubic quantum dot using the FEM simulation. Superlattices Microstruct. 69 (2014), pp. 38–52.
  • R. Khordad and H. Bahramiyan, Study of impurity position effect in pyramid and cone like quantum dots. EPJ Appl. Phys 67 (2014), pp. 20402.
  • R. En-Nadir, H. El Ghazi, A. Jorio and I. Zorkani, Ground-state shallow-donor binding energy in (In, Ga) N/GaN double QWs under temperature, size, and the impurity position effects. J. Mod. Sim. Mater 4 (2021), pp. 1–6.
  • R. En-nadir, H. El Ghazi, W. Belaid, A. Jorio, I. Zorkani and HŞ Kiliç, Ground and first five low-lying excited states related optical absorption in In. 1Ga. 9N/GaN double quantum wells: Temperature and coupling impacts. Solid State Commun. 338 (2021), pp. 114464.
  • W. Belaid, H. El Ghazi, I. Zorkani and A. Jorio. Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition, in: MATEC Web Conf., EDP Sciences, 2020.
  • K. Batra and V. Prasad, Finite difference calculation of optical properties of hydrogenic impurity in spherical quantum dot with parabolic confinement. Rev. Mex. de Fis E 64 (2018), pp. 7–15.
  • G.V.B.d. Souza and A. Bruno-Alfonso. Donor energy levels of a spherical quantum dot subject to parallel electric and magnetic fields, Sociedade Brasileira de Fisica (SBF), Sao Paulo, SP (Brazil), 2011.
  • S.S. Li and J.B. Xia, Application of plane wave method to the calculation of electronic states of nano-structures. Chin. Phys. Lett 23 (2006), pp. 1896.
  • S.S. Li and J.B. Xia, Electronic states of a hydrogenic donor impurity in semiconductor nano-structures. Phys. Lett. A 366 (2007), pp. 120–123.
  • C. Bose and C. Sarkar, Perturbation calculation of donor states in a spherical quantum. Solid State Electron. Lett 42 (1998), pp. 1661–1663.
  • A. Boda, Magnetic moment and susceptibility of an impurity in a parabolic quantum. J. Magn. Magn. Mater 483 (2019), pp. 83–88.
  • M. Şahin and M. Tomak, Electronic structure of a many-electron spherical quantum dot with an impurity. Phys. Rev. B 72 (2005), pp. 125323.
  • S. Wei and Q. Chang, Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots. Phys. E: Low-Dimens. Syst. Nanostruct 43 (2010), pp. 354–358.
  • E. Sadeghi and E. Naghdi, Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots. Nano Converg 1 (2014), pp. 1–6.
  • J.J. Liu, M. Shen and S.W. Wang, The influence of compressive stress on shallow-donor impurity states in symmetric GaAs-Ga 1− x Al x As double quantum dots. J. Appl. Phys 101 (2007), pp. 073703.
  • J.L. Zheng, Binding energy of hydrogenic impurity in GaAs/Ga1-xAlxAs multi-quantum-dot structure. Phys. E: Low-Dimens. Syst. Nanostruct 40 (2008), pp. 2879–2883.
  • J. Northrup, C. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. Johnson and T. Kolbe, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl. Phys. Lett 100 (2012), pp. 021101.
  • K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake, Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells. AIP. Adv. 9 (2019), pp. 125342.
  • R.G. Banal, M. Funato and Y. Kawakami, Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy. Phys. Status Solidi C 7 (2010), pp. 2111–2114.
  • G. Salis, K. Ensslin, K. Campman, K. Maranowski and A. Gossard, Wave-function spectroscopy in parabolic quantum wells. Phys. B: Condens. Matter 249 (1998), pp. 941–945.
  • E. Kasapoglu, Binding energy of donor impurities in double inverse parabolic quantum well under electric field. Phys. E: Low-Dimens. Syst. Nanostruct 41 (2009), pp. 1222–1225.
  • H. Akbas, C. Dane, I. Erdogan and O. Akankan, Hydrogenic donor in asymmetric AlxLGa1− xLAs/GaAs/AlxRGa1− xRAs quantum wells. Phys. E: Low-Dimens. Syst. Nanostruct 60 (2014), pp. 196–199.
  • H. Akbas, S. Sucu, S. Minez, C. Dane, O. Akankan and I. Erdogan, Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure. Superlattices Microstruct. 94 (2016), pp. 131–137.
  • J. Zhu, S.L. Ban and S.H. Ha, Built-In electric field effect on donor impurities in strained Wurtzite GaN/AlGaN asymmetric double quantum wells. Mod. Phys. Lett. B 26 (2012), pp. 1250172.
  • G. Orsal, Y. El Gmili, N. Fressengeas, J. Streque, R. Djerboub, T. Moudakir, S. Sundaram, A. Ougazzaden and J.P. Salvestrini, Bandgap energy bowing parameter of strained and relaxed InGaN layers. Opt. Mater. Express 4 (2014), pp. 1030–1041.
  • Y.P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica 34 (1967), pp. 149–154.
  • M. Cardona and Y.Y. Peter, Fundamentals of Semiconductors, Springer, Berlin, 2005.
  • M.H. Gazzah, B. Chouchen, A. Fargi and H. Belmabrouk, Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures. Mater. Sci. Semicond. Process 93 (2019), pp. 231–237.
  • W. Belaid, H. El Ghazi, I. Zorkani and A. Jorio, Pressure-related binding energy in (In, Ga) N/GaN double quantum wells under internal composition effects. Solid State Commun. 327 (2021), pp. 114193.
  • I. Vurgaftman and J.N. Meyer, Band parameters for nitrogen-containing semiconductors. J. Appl. Phys 94 (2003), pp. 3675–3696.
  • U. Yesilgul, H. Sari, F. Ungan, J. Martínez-Orozco, R. Restrepo, M. Mora-Ramos, C. Duque and I. Sökmen, Effects of electromagnetic fields on the nonlinear optical properties of asymmetric double quantum well under intense laser field. Chem. Phys 485 (2017), pp. 81–87.
  • S.S. Li and J.B. Xia, Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot: Quantum confinement and Stark effects. J. Appl. Phys 101 (2007), pp. 093716.
  • M. Barati, G. Rezaei and M. Vahdani, Binding energy of a hydrogenic donor impurity in an ellipsoidal finite-potential quantum. Phys. Status Solidi B 244 (2007), pp. 2605–2610.
  • R.D. Bella and K. Navaneethakrishnan, Donor binding energies and spin–orbit coupling in a spherical quantum. Solid State Commun. 130 (2004), pp. 773–776.
  • G. Rezaei, N. Doostimotlagh and B. Vaseghi, Simultaneous effects of hydrostatic pressure and conduction band non-parabolicity on binding energies and diamagnetic susceptibility of a hydrogenic impurity in spherical quantum dots. Commun. Theor. Phys 56 (2011), pp. 377.
  • A. Fakkahi, A. Sali, M. Jaouane and R. Arraoui, Hydrostatic pressure, temperature, and electric field effects on the hydrogenic impurity binding energy in a multilayered spherical quantum. Appl. Phys. A 127 (2021), pp. 1–9.
  • E. Kasapoglu, The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1− xAlxAs double quantum well under the external fields. Phys. Lett. A 373 (2008), pp. 140–143.
  • H. El Ghazi, I. Zorkani and A. Jorio, Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW. Phys. B: Condens. Matter 412 (2013), pp. 87–90.
  • H. El Ghazi, A. Jorio and I. Zorkani, Impurity binding energy of lowest-excited state in (In, Ga) N–GaN spherical QD under electric field effect. Phys. B: Condens. Matter 426 (2013), pp. 155–157.
  • P. Nithiananthi and K. Jayakumar, Effect of temperature on the binding energy of low lying excited states in a quantum well. Int. J. Mod. Phys. B 17 (2003), pp. 5811–5817.
  • O. Akankan, I. Erdogan, A. Mese, E. Cicek and H. Akbas, The effects of geometrical shape and impurity position on the self-polarization of a donor impurity in an infinite GaAs/AlAs tetragonal quantum. Indian J. Phys 95 (2021), pp. 1341–1344.

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