Electrical conductivity and Hall effect in n-type CdS

References

• F.A. Kroger, H.J. Vink, and J. Volger, Temperature dependence of the Hall effect and the resistivity of CdS single crystals. Philips Res. Rep. 10 (1955), pp. 39–76.
   Google Scholar
• K. Morimoto, M. Kitagawa, and T. Yoshida, Evaluation of impurity content by Hall-effect analysis in CdS. J. Cryst. Growth. 59 (1982), pp. 254–262.
   Web of Science ®Google Scholar
• K. Morimoto and M. Kitagawa, Electrical-conduction in undoped CdS at low-temperatures. J. Phys. Soc. Jpn. 54 (1985), pp. 4271–4281.
   Google Scholar
• S. Toyotomi and K. Morigaki, Impurity conduction in cadmium sulfide at low temperatures. J. Phys. Soc. Jpn. 25 (1968), pp. 807–815.
   Google Scholar
• H.H. Woodbury, Anomalous mobility behavior in CdS and CdTe - electrical evidence for impurity pairs. Phys. Rev. B. 9 (1974), pp. 5188–5194.
   Web of Science ®Google Scholar
• A.R. Hutson, Role of dislocations in the electrical-conductivity of CdS. Phys. Rev. Lett. 46 (1981), pp. 1159–1162.
   Web of Science ®Google Scholar
• Y. Kajikawa, Analysis of low-temperature data of Hall-effect measurements on Ga-doped p-Ge on the basis of an impurity Hubbard band model. Phys. Stat. Sol. C. 14 (2017), p. 1700071.
   Google Scholar
• Y. Kajikawa, Refined analysis of low-temperature data of Hall-effect measurements on Sb-doped n-Ge on the basis of an impurity-Hubbard-band model. Phys. Stat. Sol. C. 14 (2017), p. 1700151.
   Google Scholar
• Y. Kajikawa, Updated analysis of low-temperature data of Hall-effect measurements on P-doped n-Si on the basis of an impurity-Hubbard-band model. Phys. Stat. Sol. C. 14 (2017), p. 1700228.
   Google Scholar
• Y. Kajikawa, Negative Hall factor of acceptor impurity hopping conduction in p-type 4H-SiC. J. Electron. Mater. 50 (2021), pp. 1247–1259.
   Web of Science ®Google Scholar
• Y. Kajikawa, Analysis of the Hall-effect data on Mn-doped GaAs with taking into account the Hall factor for nearest-neighbor hopping conduction. Phys. Stat. Sol. C. 13 (2016), pp. 387–394.
   Google Scholar
• Y. Kajikawa, Reappraisal of conduction and Hall effect due to impurity Hubbard bands in weakly compensated n-GaAs. Phys. Stat. Sol. B. 255 (2018), p. 1800063.
   Google Scholar
• Y. Kajikawa, Analysis of low-temperature data of Hall-effect measurements on p-type InP using a small-polaron theory. Phys. Stat. Sol. C. 14 (2017), p. 1600217.
   Google Scholar
• Y. Kajikawa, Significant effects of the D− band on the Hall coefficient and the Hall mobility of n-InP. Phys. Stat. Sol. B. 257 (2019), p. 1900354.
   Google Scholar
• Y. Kajikawa, Analysis of the experimental data for impurity-band conduction in Mn-doped InSb. Phys. Stat. Sol. C. 14 (2017), p. 1600215.
   Google Scholar
• Y. Kajikawa, Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model. Mater. Sci. Eng. B. 263 (2020), p. 114809.
   Web of Science ®Google Scholar
• Y. Kajikawa, Multi-band analysis of temperature-dependent transport coefficients (conductivity, Hall, Seebeck, and Nernst) of Ni-doped CoSb3. J. Appl. Phys. 119 (2016), p. 055702.
   Web of Science ®Google Scholar
• Y. Kajikawa, Hopping conduction in FeSi. I. The Hall, Seebeck, and Nernst effects due to hopping conduction in the top and bottom impurity Hubbard bands. AIP. Adv. 11 (2021), p. 105210.
   Web of Science ®Google Scholar
• Y. Kajikawa, Multi-band analyses of the conductivity, the Hall coefficient, and the Seebeck coefficient of single crystal p-type β-FeSi2. J. Alloys Compd. 846 (2020), p. 155861.
   Web of Science ®Google Scholar
• Y. Kajikawa, Analyses of low-temperature transport and thermoelectric properties of polycrystalline undoped n-ZrNiSn. AIP. Adv. 11 (2021), p. 055108.
   Web of Science ®Google Scholar
• Y. Kajikawa, Multi-band simultaneous fits of transport data on p-type ScNiSb with including impurity conduction. Int. J. Modern Phys. B 36 (2022), p. 2250071.
   Web of Science ®Google Scholar
• X.C. Yang, C.C. Xu, and N.C. Giles, Intrinsic electron mobilities in CdSe, CdS, ZnO, and ZnS and their use in analysis of temperature-dependent Hall measurements. J. Appl. Phys. 104 (2008), p. 073727.
   Web of Science ®Google Scholar
• A.I. Ivaschenko and M. Aoki, Electrical-properties of n-CdS grown from tellurium solution. Jpn. J. Appl. Phys. 18 (1979), pp. 839–840.
   Web of Science ®Google Scholar
• A.I. Ivaschenko and M. Aoki, Photoconductivity and crystal perfection ㏌ n-CdS grown from Te solution. Jpn. J. Appl. Phys. 18 (1979), pp. 1873–1874.
   Web of Science ®Google Scholar
• D.C. Look, Electrical Characterization of GaAs Materials and Devices, Wiley, New York, 1989.
   Google Scholar
• W.S. Baer and R.N. Dexter, Electron cyclotron resonance ㏌ CdS. Phys. Rev. 135 (1964), pp. A1388–A1393.
   Google Scholar
• M.V. Kurik, Electron effective mass ㏌ II-VI semiconductors. Phys. Lett. A. 24 (1967), pp. 742–743.
   Web of Science ®Google Scholar
• J.L. Boone and G. Cantwell, Electrical-properties of pure CdS. J. Appl. Phys. 57 (1985), pp. 1171–1175.
   Web of Science ®Google Scholar
• T.G. Castner, N.K. Lee, H.S. Tan, L. Moberly, and O. Symko, The low-frequency, low-temperature dielectric behavior of n-type germanium below the insulator-metal transition. J. low Temp. Phys. 38 (1980), pp. 447–473.
   Web of Science ®Google Scholar
• S. Abboudy, Estimation of the effective dielectric response from hopping activation energy in the vicinity of insulator-metal transition in semiconductors. Int. J. Mod. Phys. B. 10 (1996), pp. 59–95.
   Web of Science ®Google Scholar
• V.A. Kasiyan, D.D. Nedeoglo, A.V. Simashkevich, and I.N. Timchenko, Critical behaviour of n-ZnSe paeameters in vicinity of the metal-insulator transition. Phys. Stat. Sol. B. 154 (1989), pp. 691–702.
   Google Scholar
• N.D. Nedeoglo, R. Laiho, A.V. Lashkul, E. Lahderanta, and M.A. Shakhov, Influence of the magnetic field on the conductivity within the Coulomb gap of n-ZnSe single crystals doped with Ag. Semicond. Sci. Technol. 21 (2006), pp. 1335–1340.
   Web of Science ®Google Scholar
• N.A. Poklonski, S.A. Vyrko, and A.G. Zabrodskii, Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities. Phys. Solid State. 46 (2004), pp. 1101–1106.
   Web of Science ®Google Scholar
• F.D. Adams, D.C. Look, L.C. Brown, and D.R. Locker, Nuclear-magnetic-resonance studies of semiconductor-to-metal transition in chlorine-doped cadmium sulfide. Phys. Rev. B. 4 (1971), pp. 2115–2123.
   Web of Science ®Google Scholar
• N.F. Mott, The transition to the metallic state. Phil. Mag. 6 (1961), pp. 287–309.
   Google Scholar
• T. Matsubara and Y. Toyozawa, Theory of impurity band conduction in semiconductors - An approach to random lattice problem. Prog. Theor. Phys. 26 (1961), pp. 739–756.
   Google Scholar
• D.L. Rode, Electron mobility in II-VI semiconductors. Phys. Rev. B. 2 (1970), pp. 4036–4044.
   Web of Science ®Google Scholar
• N.D. Kataria and P.C. Mathur, Polaron effective mass in normal-type cadmium-sulfide. J. Appl. Phys. 48 (1977), pp. 5127–5130.
   Web of Science ®Google Scholar
• P.C. Mathur, B.R. Sethi, O.P. Sharma, and P.L. Talwar, Effect of high-temperature annealing in cadmium on the electrical transport properties of single-crystals of cadmium-sulfide. J. Phys. C-Solid State Phys. 12 (1979), pp. 2333–2339.
   Google Scholar
• N.A. Poklonski and V.F. Stelmakh, Screening of electrostatic fields ㏌ crystalline semiconductors by electrons hopping over defects. Phys. Stat. Sol. B. 117 (1983), pp. 93–99.
   Google Scholar
• N.A. Poklonskiĭ, S.Y. Lopatin, and A.G. Zabrodskiĭ, A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga. Phys. Solid State. 42 (2000), pp. 441–449.
   Web of Science ®Google Scholar
• H. Böttger and V.V. Bryksin, The hopping Hall mobility in disordered systems. Solid State Commun. 23 (1977), pp. 227–231.
   Web of Science ®Google Scholar
• H. Böttger and V.V. Bryksin, Hopping Conduction in Solids, Akademie-Verlag, Berlin, 1985.
   Google Scholar
• Y. Kajikawa, Deconvolution of local activation energy of hopping conductivity: Application to p-Ge. Int. J. Mod. Phys. B. 34 (2020), p. 2050069.
   Web of Science ®Google Scholar
• Y. Kajikawa, Two acceptor levels and hopping conduction in Mn-doped GaAs. Jpn. J. Appl. Phys. 56 (2017), p. 011201.
   Web of Science ®Google Scholar
• Y. Kajikawa, Hall factor for hopping conduction in n- and p-type GaN. Phys. Stat. Sol. C. 14 (2017), p. 1600129.
   Google Scholar
• O. Bleibaum, H. Böttger, and V.V. Bryksin, Effective-medium method for hopping transport in a magnetic field. Phys. Rev. B. 56 (1997), pp. 6698–6711.
   Web of Science ®Google Scholar
• D. Emin and T. Holstein, Studies of small-polaron motion IV. Adiabatic theory of the Hall effect. Ann. Phys. 53 (1969), pp. 439–520.
   Web of Science ®Google Scholar
• R Németh and B. Mühlschlegel, Hopping Hall conductivity in disordered and granular systems. Solid State Communications 66(9) (1988), pp. 999–1001.
   Web of Science ®Google Scholar
• H. Shenker, Low-field breakdown, non-ohmic conductivity, and photoconductivity of CdS at low temperatures. J. Phys. Chem. Solids 19 (1961), pp. 1–7.
   Web of Science ®Google Scholar
• H. Ogi, Y. Tsutsui, N. Nakamura, A. Nagakubo, M. Hirao, M. Imade, M. Yoshimura, and Y. Mori, Hopping conduction and piezoelectricity in Fe-doped GaN studied by non-contacting resonant ultrasound spectroscopy. Appl. Phys. Lett. 106 (2015), pp. 091901.
   Web of Science ®Google Scholar
• R.S. Crandall, Electrical conduction in n-type cadmium sulfide at low temperatures. Phys. Rev. 169 (1968), pp. 577–584.
   Google Scholar
• A.L. Efros and B.I. Shklovskii, Coulomb gap and low temperature conductivity of disordered systems. J. Phys. C: Solid State Phys. 8 (1975), pp. L49–L51.
   Web of Science ®Google Scholar
• T. Toyabe and S. Asai, Theory of phonon-assisted hopping conduction in piezoelectric semiconductor. Phys. Rev. B. 8 (1973), pp. 1531–1538.
   Web of Science ®Google Scholar
• R.H. Bube, Photoconductivity and crystal imperfections in cadmium sulfide crystals .2. Determination of characteristic photoconductivity quantities. J. Chem. Phys. 23 (1955), pp. 18–25.
   Web of Science ®Google Scholar
• M. Hornung and H.V. Löhneysen, Crossover from Mott to Efros-Shklovskii variable range-hopping in Si:P. Czech J. Phys. 46(Suppl. S5) (1996), pp. 2437–2438.
   Google Scholar
• M. Hornung, M. Iqbal, S. Waffenschmidt, and H.V. Löhneysen, Analysis of variable-range hopping conductivity in Si:P. Phys. Stat. Sol. B. 218 (2000), pp. 75–81.
   Google Scholar
• C.H. Henry and K. Nassau, Magneto-optical studies of excited states of Cl donor in CdS. Phys. Rev. B. 2 (1970), pp. 997–1004.
   Web of Science ®Google Scholar
• H.H. Woodbury and M. Aven, Shallow-donor ionization energies in II-VI compounds. Phys. Rev. B. 9 (1974), pp. 5195–5202.
   Web of Science ®Google Scholar
• L.H. Gordy, Impurity conduction in cadmium-sulfide between 0.4 and 4.2 K. Bull. Am. Phys. Soc. 18 (1973), pp. 353–353.
   Google Scholar
• J.F. Scott, T.C. Damen, and P.A. Fleury, Linewidths and two-electron processes in spin-flip Raman scattering from CdS and ZnSe. Phys. Rev. B. 6 (1972), pp. 3856–3864.
   Web of Science ®Google Scholar
• J.G. Ramos, Spin-flip line-shape in CdS. Solid State Commun. 27 (1978), pp. 309–311.
   Web of Science ®Google Scholar
• I. Gunal and M. Parlak, Current transport mechanisms in low resistive CdS thin films. J. Mater. Sci.-Mater. Electron. 8 (1997), pp. 9–13.
   Web of Science ®Google Scholar
• Y. Kajikawa, Conduction model covering non-degenerate through degenerate polycrystalline semiconductors with non-uniform grain-boundary potential heights based on an energy filtering model. J. Appl. Phys. 112 (2012), p. 123713.
   Web of Science ®Google Scholar
• B.R. Sethi, P.K. Goyal, O.P. Sharma, and P.C. Mathur, High-field DC conductivity in n-type CdS single-crystals annealed in molten indium. Phys. Stat. Sol. A. 75 (1983), pp. 83–89.
   Google Scholar
• U.V. Desnica, I.D. Desnica-Frankovic, R. Magerle, and M. Deicher, Compensating defects and electrical activation of donors in CdS. Physica B-Condens. Matter. (1999), pp. 273–274. pp. 907-910.
   Web of Science ®Google Scholar
• R.T. Bate, R.D. Baxter, F.J. Reid, and A.C. Beer, Conduction electron scattering by ionized donors in InSb at 80°K. J. Phys. Chem. Solids. 26 (1965), pp. 1205–1214.
   Web of Science ®Google Scholar
• O. Malyk, V. Rodych, and H. Il’Chuk, The local electron interaction with crystal defects in wurtzite CdS. Phys. Stat. Sol. C. 13 (2016), pp. 494–497.
   Google Scholar
• J.R. Meyer and F.J. Bartoli, Phase-shift calculation of electron mobility in n-type silicon at low temperatures. Phys. Rev. B. 24 (1981), pp. 2089–2100.
   Web of Science ®Google Scholar
• S. Asai, T. Toyabe, and M. Hirano, Impurity conduction and non-Ohmic properties of high purity n-type gallium arsenide. 10th Int. Conf. Physics of Semiconductors, United States Atomic Energy Commission, Cambridge, 1970, pp. 578–583.
   Google Scholar
• A.R. Hutson, Piezoelectric scattering and phonon drag in ZnO and CdS. J. Appl. Phys. 32 (1961), pp. 2287–2292.
   Web of Science ®Google Scholar
• Y. Kajikawa, Deconvolution of temperature dependence of conductivity, its reduced activation energy, and Hall-effect data for analysing impurity conduction in n-ZnSe. Phil. Mag. 100 (2020), pp. 2018–2039.
   Google Scholar