References
- P.C. Verbueg, L.A. Smillie, G.R.B.E. Romer, I.B. Habeeri, J.E. Badley, J.S. Williams, I. Huis, and A.J. Veld, Crystal structure of laser-induced subsurface modifications in Si. Appl. Phys. A 120 (2015), pp. 683–691.
- H. Iwata, D. Kawaguchi, and H. Saka, Electron microscopy of voids in Si formed by permeable laser injection. Microscopy 66 (2017), pp. 328–336.
- H. Iwata, D. Kawaguchi, and H. Saka, Crystal structures of high-pressure phases formed in Si by laser injection. Microscopy 67 (2018), pp. 30–36.
- H. Saka, H. Iwata, and D. Kawaguchi, Thermal stability of laser induced modified volume in Si as studied by in-situ and ex-situ heating experiments. Microscopy 67 (2018), pp. 112–120.
- D. Kawaguchi, H. Iwata, and H. Saka, Whereabouts of missing atoms in a laser injected Si (part 1). Philos. Mag. 99 (2019), pp. 1849–1865.
- Y. Kiyota, K. Hara, M. Jankowski, and M.M. Fejer, Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-laser processing in monocrystalline Si. J. Appl. Phys. 127 (2020), pp. 085106. doi:10.1063/1.5130701.
- H. Saka, H. Iwata, and M. Takagi, Whereabouts of missing atoms in a laser injected Si (part III). Philos. Mag. 99 (2023), pp. 1345–1359.
- E. Ohmura, I.M. Kumaga, K. Fukumitsu, M. Nakano, N. Uchimura, and H. Morita, Internal modification of ultrathin siliconwafer bypermeable pulse laser (ln Japanese) Seimitsu Kougakkaishi. J. Jpn. Soc. Pre. Eng. 74 (2008), pp. 275–281.
- Available at: http://www.jeol.co.jp/applications/pdf/tem/sp_001_00.pdf (in Japanese).
- H. Suzuki, Chemical interaction of solute atoms with dislocations. Sci. Rep. Res. Inst. Tohoku Univ. A 4 (1952), pp. 455–464.
- S.M. Holmes, P.M. Hazzledine, and H.P. Karnthaler, Unstable dislocation in face-centred-cubic merals. Philos. Mag. A 39 (1979), pp. 277–292.
- K. Urban, Radiation-induced processes in experiments carried out in-situ in the high-voltage electron microscope. Phys. Stat. Solidi A 56 (1979), pp. 157–168.
- H. Saka, K. Yamamoto, S. Arai, and K. Kuroda, In-situ TEM observation of transformation of dislocations from shuffle to glide sets in Si under supersaturation of interstitials. Philos. Mag. 86 (2006), pp. 4841–4850.
- A. Ourmazd, D. Cherns, and P.B. Hirsch, The climb of dissociated dislocations in semiconductors. Inst. Phys. Ser. 60 (1981), pp. 39–44.
- D. Cherns, P. Hirsch, and H. Saka, Mechanism of climb of dissociated dislocations. Proc. Roy. Soc. London, A 371 (1980), pp. 213–234.