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Reviews

Boron Removal from Silicon Using Secondary Refining Techniques by Metallurgical Method

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Pages 68-88 | Received 09 Aug 2017, Accepted 03 Sep 2018, Published online: 01 Oct 2018

References

  • Goodrich, A., Hacke, P., Wang, Q., Sopori, B., Margolis, R., James, T.L. and Woodhouse, M. (2013) A wafer-based monocrystalline silicon photovoltaics road map: utilizing known technology improvement opportunities for further reductions in manufacturing costs. Sol. Energy Mater. Sol. Cells., 114: 110–135. doi:10.1016/j.solmat.2013.01.030.
  • Weizman, M., Rhein, H., Dore, J., Gall, S., Klimm, C., Andrä, G., Schultz, C., Fink, F., Rau, B. and Schlatmann, R. (2014) Efficiency and stability enhancement of laser-crystallized polysilicon thin-film solar cells by laser firing of the absorber contacts. Sol. Energy Mater. Sol. Cells., 120: 521–525. doi:10.1016/j.solmat.2013.09.033.
  • Zheng, P.T., Rougieux, F.E., Zhang, X.Y., Degoulange, J., Einhaus, R., Rivat, P. and Macdonald, D.H. (2017) 21.1% UMG silicon solar cells. IEEE J. Photovolt., 7: 58–61. doi:10.1109/JPHOTOV.2016.2616192.
  • Yoshikawa, K., Kawasaki, H., Yoshida, W., Irie, T., Konishi, K., Nakano, K., Uto, T., Adachi, D., Kanematsu, M., Uzu, H. and Yamamoto, K. (2017) Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%. Nat Energy., 2 (article): 17032. doi:10.1038/nenergy.2017.32.
  • Coso, G.D., Tobías, I., Cañizo, C. and Luque, A. (2007) Temperature homogeneity of polysilicon rods in a Siemens reactor. J. Cryst. Growth., 299: 165–170. doi:10.1016/j.jcrysgro.2006.12.004.
  • Ramos, A., Filtvedt, W.O., Lindholm, D., Ramachandran, P.A., Rodríguez, A. and Cañizo, C.D. (2015) Deposition reactors for solar grade silicon: a comparative thermal analysis of a Siemens reactor and a fluidizedbed reactor. J. Cryst. Growth., 431: 1–9. doi:10.1016/j.jcrysgro.2015.08.023.
  • Cadoret, L., Reuge, N., Pannala, S., Syamlal, M., Coufort, C. and Caussat, B. (2007) Silicon CVD on powders in fluidized bed: experimental and multifluid Eulerian modelling study. Surf. Coat Technol., 201: 8919–8923. doi:10.1016/j.surfcoat.2007.04.119.
  • Filtvedt, W.O., Holt, A., Ramachandran, P.A. and Melaaen, M.C. (2012) Chemical vapor deposition of silicon from silane: review of growth mechanisms and modeling/scaleup of fluidizedbed reactors. Sol. Energy Mater. Sol. Cells., 107: 188–200. doi:10.1016/j.solmat.2012.08.014.
  • Ciftja, A. (2012) Refining of solar cell silicon through metallurgical routes. Jom., 64: 933–934. doi:10.1007/s11837-012-0385-2.
  • Morvan, D. and Amouroux, J. (1981) Preparation of photovoltaic silicon by purification of metallurgical grade silicon with a reactive plasma process. Plasma Chem. Plasma Process., 1: 397–418. doi:10.1007/BF00565995.
  • Morita, K. and Miki, T. (2003) Thermodynamics of solar-grade-silicon refining. Intermetallics., 11: 1111–1117. doi:10.1016/S0966-9795(03)00148-1.
  • Noguchi, R., Suzuki, K., Tsukihashi, F. and Sano, N. (1994) Thermodynamics of boron in a silicon melt. Metall. Mater. Trans. B., 25: 903–907. doi:10.1007/BF02662772.
  • Miki, T., Morita, K. and Sano, N. (1996) Thermodynamic of phosphorus in molten silicon. Metall. Mater. Trans. B., 27: 937–941. doi:10.1007/s11663-996-0007-x.
  • Sun, Y.H., Ye, Q.H., Guo, C.J., Chen, H.Y., Lang, X., David, F., Luo, Q.W. and Yang, C.M. (2013) Purification of metallurgical-grade silicon via acid leaching, calcination and quenching before boron complexation. Hydrometallurgy., 139: 64–72. doi:10.1016/j.hydromet.2013.07.002.
  • Heuer, M. (2013) Metallurgical grade and metallurgically refined silicon for photovoltaics, in semiconductors and semimetals. Adv. Photovoltaics., Part 2, 89: 77–134.
  • Shi, S., Dong, W., Peng, X., Jiang, D.C. and Tan, Y. (2013) Evaporation and removal mechanism of phosphorus from the surface of silicon melt during electron beam melting. Appl. Surf. Sci., 266: 344–349. doi:10.1016/j.apsusc.2012.12.022.
  • Su, H.J., Zhang, J., Liu, L. and Fu, H.Z. (2012) Preparation, microstructure and dislocation of solar-grade multicrystalline silicon by directional solidification from metallurgical-grade silicon. T. Nonferr. Metal Soc., 22: 2548–2553. doi:10.1016/S1003-6326(11)61499-4.
  • Yuge, N., Abe, M., Hanazawa, K., Baba, H., Nakamura, N., Kato, Y., Sakaguchi, Y., Hiwasa, S. and Aratani, F. (2001) Purification of metallurgical-grade silicon up to solar grade. Prog. Photovoltaics., 9: 203–209. doi:10.1002/pip.372.
  • Yoshikawa, T. and Morita, K. (2005) Removal of B from Si by solidification refining with Si-Al melts. Metall. Mater. Trans. B., 36: 731–736. doi:10.1007/s11663-005-0076-2.
  • Lei, Y., Ma, W.H., Sun, L.E., Dai, Y.N. and Morita, K. (2016) B removal by Zr addition in electromagnetic solidification Rrefinement of Si with Si-Al melt. Metall. Mater. Trans. B., 47: 27–31. doi:10.1007/s11663-015-0506-8.
  • Dhamrin, M., Ozaki, R. and Saitoh, T. (2002) Quality evaluation and improvement of iron-doped electromagnetic multycrystalline silicon wafers. Sol. Energy Mater. Sol. Cells., 74: 203–211. doi:10.1016/S0927-0248(02)00067-3.
  • Wolf, S.D., Szlufcik, J., Delannoy, Y., Périchaud, I., Häßler, C. and Einhaus, R. (2002) Solar cells from upgraded metallfugical grade (UMG) and plasma-purified UMG multicrystalline silicon substrates. Sol. Energy Mater. Sol. Cells., 72: 49–58. doi:10.1016/S0927-0248(01)00149-0.
  • Salivati, N., Shuall, N., McCrate, J.M. and Eker, J.G. (2011) Effect of subsurface boron on photoluminescence from silicon nanocrystals. Surf. Sci., 605: 799–801. doi:10.1016/j.susc.2011.01.022.
  • Schei, A., Tuset, J.K. and Tveit, H. (1998) Production of High Silicon Alloys; Trondheim, Oslo: Norway.
  • Schei, A., Rong, H., and Forwald, A.G. (1992) Impurity Distribution in Silicon, Silicon for the Chemical Industry; Ålesund, Geiranger: Norway.
  • Gasik, M. (2013) Handbook Of Ferroalloys: Theory and Technology (1st ed.), edited by Gasik, M., Elsevier, In Butterworth-Heinemann; Oxford, UK.
  • Wu, J.J., Ma, W.H., Yang, B., Dai, Y.N. and Morita, K. (2009) Boron removal from metallurgical grade silicon by oxidizing refining. T. Nonferr. Metal Soc., 19: 463–467. doi:10.1016/S1003-6326(08)60296-4.
  • Wu, J.J., Li, Y.L., Ma, W.H., Liu, K., Wei, K.X., Xie, K.Q., Yang, B. and Dai, Y.N. (2014) Impurities removal from metallurgical grade silicon using gas blowing refining techniques. Silicon., 6: 79–85. doi:10.1007/s12633-013-9158-y.
  • Alemany, C., Pateyronc, B., Li, K.-I. and Delannoy, Y. (2002) Thermodynamics of phosphorus in molten silicon. Sol Energy Mater Sol Cells., 72: 41–48. doi:10.1016/S0927-0248(01)00148-9.
  • Khattak, C.P., Joyce, D.B. and Schmid, F. (2001) Production of Solar Grade (Sog) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon, NREL/SR-520-30716; National Renewable Energy Laboratory: Denver, Colorado, US.
  • Sortland, Ø.S. and Tangstad. (2014) Boron removal from silicon melts by H2O/H2 gas blowing: mass transfer in Gas and melt. M. Metall. Mater. Trans. E., 1: 211–225.
  • Khattak, C.P., Joyce, D.B. and Schmid, F. (2002) A simple process to remove boron from metallurgical grade silicon. Sol. Energy Mater. Sol. Cells., 74: 77–89. doi:10.1016/S0927-0248(02)00051-X.
  • Nordstrand, E.F. and Tangstad. (2012) Removal of boron from silicon by moist hydrogen gas. M. Metall. Mater. Trans. B., 43: 814–822. doi:10.1007/s11663-012-9671-1.
  • Safarian, J., Tang, K., Hildal, K. and Tranel, G. (2014) Boron removal from silicon by humidified gases. Metall. Mater. Trans. E., 1: 41–47.
  • Khattak, C.P., Schmid, F., Joyce, D.B., Smelik, E.A. and Wilkinson, M.A. (1998) NREL NCPV Photovoltaics Program Review, Proceedings of the 15th Conference, ed. By Al-Jassim, M., Thornton, J.P. and Gee, J.M., AIP Conference Proceedings, Denver, Colorado, US, pp. 731–736.
  • Tang, K., Andersson, S., Nordstrand, E. and Tangstad, M. (2012) Removal of boron in silicon by H2-H2O gas mixtures. Jom., 64: 952–956. doi:10.1007/s11837-012-0368-3.
  • Safarian, J., Tang, K., Olsen, J.E., Andersson, S., Tranell, G. and Hildal, K. (2016) Mechanisms and kinetics of boron removal from silicon by humidified hydrogen. Metall. Mater. Trans. B., 47: 1063–1079. doi:10.1007/s11663-015-0566-9.
  • Altenberend, J., Chichignoud, G. and Delannoy, Y. (2017) Study of mass transfer in gas blowing processes for silicon purification. Metall. Mater. Trans. E., 4: 41–50.
  • Lee, B.P., Lee, H.M., Park, D.H., Shin, J.S., Yu, T.U. and Moon, B.M. (2011) Refining of MG-Si by hybrid melting using steam plasma and EMC. Sol. Energy Mater. Sol. Cells., 95: 56–58. doi:10.1016/j.solmat.2010.02.011.
  • Flamant, G., Kurtcuoglu, V., Murray, J. and Steinfeld, A. (2006) Purification of metallurgical grade silicon by a solar process. Sol. Energy Mater. Sol. Cells., 90: 2099–2106. doi:10.1016/j.solmat.2006.02.009.
  • Suzuki, K., Kumagai, T. and Sano, N. (1992) Removal of boron from metallurgical-grade silicon by applying the plasma treatment. ISIJ Int., 32: 630–634. doi:10.2355/isijinternational.32.630.
  • Lee, S., Jung, E.J., Park, J.H. and Min, D.J. (2015) Influence of the oxygen partial pressure and the boron content on the behavior of boron in calcium silicate melts. J. Non-Cryst. Solids., 429: 54–60. doi:10.1016/j.jnoncrysol.2015.08.033.
  • Teixira, L.A.V., Tokuda, Y., Yoko, T. and Morita, K. (2009) Behavior and state of boron in CaO-SiO2 slags during refining of solar grade silicon. ISIJ Int., 49: 777–782. doi:10.2355/isijinternational.49.777.
  • Johnston, M.D. and Barati, M. (2010) Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications. Sol. Energy Mater. Sol. Cells., 94: 2085–2090. doi:10.1016/j.solmat.2010.06.025.
  • Jung, E.J., Moon, B.M., Seok, S.H. and Min, D.J. (2014) The mechanism of boron removal in the CaO-SiO2-Al2O3 slag system for SoG-Si. Energy., 66: 35–40. doi:10.1016/j.energy.2013.08.010.
  • Wu, J.J., Li, Y.L., Ma, W.H., Wei, K.X., Yang, B. and Dai, Y.N. (2014) Boron removal in purifying metallurgical grade silicon by CaO-SiO2 slag refining. T. Nonferr. Metal Soc., 24: 1231–1236. doi:10.1016/S1003-6326(14)63183-6.
  • Jakobsson, L.K. and Tangstad, M. (2015) Thermodynamic activities and distributions of calcium and magnesium between silicon and CaO-MgO-SiO2 slags at 1873 K (1600 °C). Metall. Mater. Trans. B., 46: 595–605. doi:10.1007/s11663-014-0268-8.
  • Luo, D.W., Liu, N., Lu, Y.P., Zhang, G.L. and Li, T.J. (2011) Removal of boron from metallurgical grade silicon by electromagnetic induction slag melting. T. Nonferr. Metal Soc., 21: 1178–1184. doi:10.1016/S1003-6326(11)60840-6.
  • Li, M., Utigard, T. and Barati, M. (2015) Kinetics of Na2O and B2O3 loss from CaO-SiO2-Al2O3 slags. Metall. Mater. Trans. B., 46: 74–82. doi:10.1007/s11663-014-0168-y.
  • Johnston, M.D. and Barati, M. (2011) Effect of slag basicity and oxygen potential on the distribution of boron and phosphorus between slag and silicon. J. Non-Cryst. Solids., 357: 970–975. doi:10.1016/j.jnoncrysol.2010.10.033.
  • Jakobsson, L.K. and Tangstad, M. (2014) Distribution of boron between silicon and CaO-MgO-Al2O3-SiO2 slags. Metall. Mater. Trans. B., 45: 1644–1655. doi:10.1007/s11663-014-0088-x.
  • Li, Y.L., Wu, J.J., Ma, W.H. and Yang, B. (2015) Boron removal from metallurgical grade silicon using a refining technique of calcium silicate molten slag containing potassium carbonate. Silicon., 7: 247–252. doi:10.1007/s12633-014-9222-2.
  • Li, M., Utigard, T. and Barati, M. (2014) Removal of boron and phosphorus from silicon using CaO-SiO2-Na2O-Al2O3 flux. Metall. Mater. Trans. B., 45: 221–228. doi:10.1007/s11663-013-0011-x.
  • Krystad, E., Tang, K. and Tranell, G. (2012) The kinetics of boron transfer in slag refining of silicon. Jom., 64: 968–972. doi:10.1007/s11837-012-0382-5.
  • Zhang, L., Tan, Y., Xu, F.M., Li, J.Y., Wang, H.Y. and Gu, Z. (2013) Removal of boron from molten silicon using Na2O-CaO-SiO2 slags. Sep. Sci. Technol., 48: 1140–1144. doi:10.1080/01496395.2012.714438.
  • Zhang, L., Tan, Y., Li, J.Y., Liu, Y. and Wang, D.K. (2013) Study of boron removal from molten silicon by slag refining under atmosphere. Mater. Sci. Semicond. Process., 16: 1645–1649. doi:10.1016/j.mssp.2013.04.012.
  • Safarian, J., Tranell, G. and Tangstad, M. (2013) Thermodynamic and kinetic behavior of B and Na through the contact of B-doped silicon with Na2O-SiO2 Slags. Metall. Mater. Trans. B., 44: 571–583. doi:10.1007/s11663-013-9823-y.
  • Fang, M., Lu, C.H., Huang, L.Q., Lai, H.X., Chen, J., Yang, X.B., Li, J.T., Ma, W.H., Xing, P.F. and Luo, X.T. (2014) Multiple Slag operation on boron removal from metallurgical-grade silicon using Na2O‑SiO2 slags. Ind. Eng. Chem. Res., 53: 12054–12062. doi:10.1021/ie404427c.
  • Yin, C., Hu, B. and Huang, X. (2011) Boron removal from molten silicon using sodium-based slags. J. Semicond., 32: 12–15. doi:10.1088/1674-4926/32/9/092003.
  • White, J.F. and Sichen, D. (2014) Mass transfer in slag refining of silicon with mechanical stirring: transient interfacial phenomena. Metall. Mater. Trans. B., 45: 96–105. doi:10.1007/s11663-013-0010-y.
  • Wu, J.J., Ma, W.H., Jia, B.J., Yang, B., Liu, D.C. and Dai, Y.N. (2012) Boron removal from metallurgical grade silicon using a CaO-Li2O-SiO2 molten slag refining technique. J. Non-Cryst. Solids., 358: 3079–3083. doi:10.1016/j.jnoncrysol.2012.09.004.
  • Li, Y.L., Wu, J.J. and Ma, W.H. (2014) Kinetics of boron removal from metallurgical grade silicon using a slag refining technique based on CaO-SiO2 binary system. Sep. Sci. Technol., 49: 1946–1952. doi:10.1080/01496395.2014.904877.
  • Wu, J.J., Xu, M., Liu, K., Ma, W.H., Yang, B. and Dai, Y.N. (2014) Removing boron from metallurgical grade silicon by a high basic slag refining technique. J. Min. Metall. B., 50: 83–86. doi:10.2298/JMMB140202005W.
  • Ding, Z., Ma, W.H., Wei, K.X., Wu, J.J., Zhou, Y. and Xie, K.Q. (2012) Boron removal from metallurgical-grade silicon using lithium containing slag. J. Non-Cryst. Solids., 358: 2708–2712. doi:10.1016/j.jnoncrysol.2012.06.031.
  • Wu, J.J., Wang, F.M., Ma, W.H., Lei, Y. and Yang, B. (2016) Thermodynamics and kinetics of boron removal from metallurgical grade silicon by addition of high basic potassium carbonate to calcium silicate. Metall. Mater. Trans. B., 47: 1796–1803. doi:10.1007/s11663-016-0615-z.
  • Wu, J.J., Xia, Z.F., Ma, W.H., Wang, F.M., Zhou, Y.Q. and Wei, K.X. (2017) Effect of zinc oxide addition in slag system and heating manner on boron removal from metallurgical grade silicon. Mater. Sci. Semicond. Process., 57: 59–62. doi:10.1016/j.mssp.2016.10.001.
  • Wang, F.M., Wu, J.J., Ma, W.H., Xu, M., Lei, Y. and Yang, B. (2016) Removal of impurities from metallurgical grade silicon by addition of ZnO to calcium silicate slag. Sep. Purif. Technol., 170: 248–255. doi:10.1016/j.seppur.2016.06.060.
  • Wang, C., Zhang, J.L., Liu, Z.J., Jiao, K.X., Wang, G.W., Yang, J.Q. and Chou, K. (2017) Effect of chlorine on the viscosities and structures of CaO-SiO2-CaCl2 slags. Metall. Mater. Trans. B., 48: 328–334. doi:10.1007/s11663-016-0846-z.
  • Li, J.Y., Zhang, L., Tan, Y., Jiang, D.C., Wang, D.K. and Li, Y.Q. (2014) Research of boron removal from polysilicon using CaO-Al2O3-SiO2-CaF2 slags. Vacuum., 103: 33–37. doi:10.1016/j.vacuum.2013.12.002.
  • Johnston, M.D., Khajavi, L.T., Li, M., Sokhanvaran, S. and Barati, M. (2012) High-temperature refining of metallurgical-grade silicon: a review. Jom., 64: 935–945. doi:10.1007/s11837-012-0384-3.
  • Teixira, L.A.V. and Morita, K. (2009) Removal of boron from molten silicon using CaO-SiO2 based slags. ISIJ Int., 49: 783–787. doi:10.2355/isijinternational.49.783.
  • Cai, J., Li, J.T., Chen, W.H., Chen, C. and Luo, X.T. (2011) Boron removal from metallurgical silicon using CaO-SiO2-CaF2 slags. T. Nonferr. Metal Soc., 21: 1402–1406. doi:10.1016/S1003-6326(11)60873-X.
  • Suzuki, K. and Sano, N. (1991) Thermodynamics for removal of boron from metallurgical silicon by flux treatment, Tenth E.C. Photovoltaic Solar Energy Conference Lisbon, Portugal, pp. 273–275.
  • Wang, Y., Ma, X.D. and Morita, K. (2014) Evaporation removal of boron from metallurgical-grade silicon using CaO-CaCl2-SiO2 slag. Metall. Mater. Trans. B., 45: 334–337. doi:10.1007/s11663-014-0031-1.
  • Wang, Y. and Morita, K. (2015) Reaction mechanism and kinetics of boron removal from molten silicon by CaO-SiO2-CaCl2 slag treatment. J. Sustain Metall., 1: 126–133. doi:10.1007/s40831-015-0015-7.
  • Huang, L.Q., Lai, H.X., Gan, C.H., Xiong, H.P., Xing, P.F. and Luo, X.T. (2016) Separation of boron and phosphorus from Cu-alloyed metallurgical grade silicon by CaO-SiO2-CaCl2 slag treatment. Sep. Purif. Technol., 170: 408–416. doi:10.1016/j.seppur.2016.07.004.
  • Wu, J.J., Zhou, Y.Q., Ma, W.H., Xu, M. and Yang, B. (2017) Synergistic separation behavior of boron in metallurgical grade silicon using a combined slagging and gas blowing refining technique. Metall. Mater. Trans. B., 48: 22–26. doi:10.1007/s11663-016-0860-1.
  • Xia, Z.F., Wu, J.J., Ma, W.H., Lei, Y. and Dai, Y.N. (2017) Separation of boron from metallurgical grade silicon by a synthetic CaO-CaCl2 slag treatment and Ar-H2O-O2 gas blowing refining technique. Sep. Purif. Technol., 187: 25–33. doi:10.1016/j.seppur.2017.06.037.
  • Benmansour, M., Nikravech, M., Morvan, D., Amouroux, J. and Chapelle, J. (2004) Diagnostic by emission spectroscopy of an argon-hydrogen RF inductive thermal plasma for purification of metallurgical grade silicon. J. Phys. D: Appl. Phys., 37: 2966–2974. doi:10.1088/0022-3727/37/21/005.
  • Rousseau, S., Benmansour, M., Morvan, D. and Amouroux, J. (2007) Purification of MG silicon by thermal plasma process coupled to DC bias of the liquid bath. Sol. Energy Mater. Sol. Cells., 91: 1906–1915. doi:10.1016/j.solmat.2007.07.010.
  • Delannoy, Y. and Alemany, C. (2002) Plasma-refining process to provide solar-grade silicon. Sol. Energy Mater. Sol. Cells., 72: 69–75. doi:10.1016/S0927-0248(01)00151-9.
  • Alemany, C., Trassy, C., Pateyronc, B., Li, K.-I. and Delannoy, Y. (2002) Refining of metallurgical-grade silicon by inductive plasma. Sol. Energy Mater. Sol. Cells., 72: 41–48. doi:10.1016/S0927-0248(01)00148-9.
  • Nakamura, N., Baba, H., Sakaguchi, Y. and Kato, Y. (2004) Boron removal in molten silicon by a steam-added plasma melting method. Mater. Trans., 45: 858–864. doi:10.2320/matertrans.45.858.
  • Yuge, N., Baba, H., Sakaguchi, Y., Nishikawa, K., Terashima, H. and Aratani, F. (1994) Purification of metallurgical silicon up to solar grade. Sol. Energy Mater. Sol. Cells., 34: 243–250. doi:10.1016/0927-0248(94)90046-9.
  • Yoshikawa, T. and Morita, K. (2012) An evolving method for solar-grade silicon production: solvent refining. Jom., 64: 946–951. doi:10.1007/s11837-012-0371-8.
  • Yoshikawa, T. and Morita, K. (2009) Refining of silicon during its solidification from a Si-Al melt. J. Cryst. Growth., 311: 776–779. doi:10.1016/j.jcrysgro.2008.09.095.
  • Yoshikawa, T. and Morita, K. (2003) Removal of phosphorus by the solidification refining with Si-Al melts. Sci. Techn. Adv. Mater., 4: 531–537. doi:10.1016/j.stam.2003.12.007.
  • Zou, Q.C., Jie, J.C., Sun, J.L., Wang, T.M., Cao, Z.Q. and Li, T.J. (2015) Effect of Si content on separation and purification of the primary Si phase from hypereutectic Al-Si alloy using rotating magnetic field. Sep. Purif. Technol., 142: 101–107. doi:10.1016/j.seppur.2015.01.005.
  • Li, Y.L., Chen, J. and Dai, S.Y. (2016) Effect of iron addition (up to 10,000 ppmw) on silicon purification during Al-Si solvent refining. J. Cryst. Growth., 453: 49–53. doi:10.1016/j.jcrysgro.2016.08.013.
  • Esfahani, S. and Barati, M. (2011) Purification of metallurgical silicon using iron as impurity getter, part Ⅱ: extent of silicon purification. Mel. Mater. Int., 17: 1009–1015. doi:10.1007/s12540-011-6020-x.
  • Khajavi, L.T., Morita, K., Yoshikawa, T. and Barati, M. (2015) Thermodynamics of boron distribution in solvent refining of silicon using ferrosilicon alloys. J. Alloy Compd., 619: 634–638. doi:10.1016/j.jallcom.2014.09.062.
  • Ma, X., Yoshikawa, T. and Morita, K. (2014) Purification of metallurgical grade Si combining Si-Sn solvent refining with slag treatment. Sep. Purif. Technol., 125: 264–268. doi:10.1016/j.seppur.2014.02.003.
  • Ma, X., Yoshikawa, T. and Morita, K. (2012) Phase relations and thermodynamic property of boron in the silicon-tin melt at 1673 K. J. Alloy Compd., 529: 12–16. doi:10.1016/j.jallcom.2012.03.057.
  • Morito, H., Karahashi, T., Uchikoshi, M., Isshiki, M. and Yamane, H. (2012) Low-temperature purification of silicon by dissolution and solution growth in sodium solvent. Silicon., 4: 121–125. doi:10.1007/s12633-011-9105-8.
  • Huang, L., Lai, H., Lu, C., Fang, M., Ma, W., Xing, P., Li, J. and Luo, X. (2016) Enhancement in extraction of boron and phosphorus from metallurgical grade silicon by copper alloying and aqua regia leaching. Hydrometallurgy., 161: 14–21. doi:10.1016/j.hydromet.2016.01.013.
  • Huang, L.Q., Chen, J., Danaei, A., Thomas, S., Huang, L.Y., Luo, X.T. and Barati, M. (2018) Effect of Ti addition to Cu-Si alloy on the boron distribution in various phases. J. Alloy Compd., 734: 235–242. doi:10.1016/j.jallcom.2017.10.279.
  • Ban, B.Y., Li, J.W., Bai, X.L., He, Q.X., Chen, J. and Dai, S.Y. (2016) Mechanism of B removal by solvent refining of silicon in Al-Si melt with Ti addition. J. Alloy Compd., 672: 489–496. doi:10.1016/j.jallcom.2016.02.198.
  • Bai, X.L., Ban, B.Y., Li, J.W., Fu, Z.Q., Peng, Z.J., Wang, C.B. and Chen, J. (2017) Effect of Ti addition on B removal during silicon refining in Al-30%Si alloy directional solidification. Sep. Purif. Technol., 174: 345–351. doi:10.1016/j.seppur.2016.11.002.
  • Li, Y.L., Chen, J., Ban, B.Y., Zhang, T.T. and Dai, S.Y. (2015) Effect of cooling rate on boron removal and solidification behavior of Al-Si alloy. High Temp. Mater. Processes., 24: 43–49.
  • Ban, B.Y., Li, Y.L., Zuo, Q.X., Zhang, T.T., Chen, J. and Dai, S.Y. (2015) Refining of metallurgical grade Si by solidification of Al-Si melt under electromagnetic stirring. J. Mater. Process. Technol., 222: 142–147. doi:10.1016/j.jmatprotec.2015.03.012.
  • Yoshikawa, T., Arimura, K. and Morita, K. (2005) Boron removal by titanium addition in solidification refining of silicon with Si-Al melt. Metall. Mater. Trans. B., 36: 837–842. doi:10.1007/s11663-005-0085-1.
  • Lei, Y., Ma, W., Sun, L., Wu, J. and Morita, K. (2016) Effects of small amounts of transition metals on boron removal during electromagnetic solidification purification of silicon with Al-Si solvent. Sep. Purif. Technol., 162: 20–23. doi:10.1016/j.seppur.2016.02.014.
  • Lei, Y., Ma, W., Sun, L., Dai, Y. and Morita, K. (2016) B removal by Zr addition in electromagnetic solidification refinement of si with Si-Al melt. Metall. Mater. Trans. B., 47: 27–31. doi:10.1007/s11663-015-0506-8.
  • Lei, Y., Ma, W., Sun, L., Wu, J., Dai, Y. and Morita, K. (2016) Removal of B from Si by Hf addition during Al-Si solvent refining process. Sci. Technol. Adv. Mater., 17: 12–19. doi:10.1080/14686996.2016.1140303.
  • Dietl, J. (1983) Hydrometallurgical purification of metallurgical-grade silicon. Sol. Cells., 10: 145–154. doi:10.1016/0379-6787(83)90015-7.
  • Santos, I.C., Gonçalves, A.P., Santos, C.S., Almeida, M., Afonso, M.H. and Cruz, M.J. (1990) Purification of metallurgical grade silicon by acid leaching. Hydrometallurgy., 23: 237–246. doi:10.1016/0304-386X(90)90007-O.
  • Yuge, N., Hanazawa, K., Nishikawa, K. and Terashima, H. (1997) Removal of Phosphorus, aluminum and calcium by evaporation in molten silicon. J. Jpn. Inst. Met., 61: 1086–1093. doi:10.2320/jinstmet1952.61.10_1086.
  • Pires, J.C.S., Otubo, J., Braga, A.F.B. and Mei, P.R. (2005) The purification of metallurgical grade silicon by electron beam melting. J. Mater. Process. Technol., 169: 16–20. doi:10.1016/j.jmatprotec.2004.03.035.
  • Tan, Y., Guo, X., Shi, S., Dong, W. and Jiang, D. (2013) Study on the removal process of phosphorus from silicon by electron beam melting. Vacuum., 93: 65–70. doi:10.1016/j.vacuum.2012.12.010.
  • Rannveig, K., Øyvind, M. and Birgit, R. (2005) Growth rate and impurity distribution in multicrystalline silicon for solar cells. Mater. Sci. Eng., 413-414: 545–549. doi:10.1016/j.msea.2005.09.035.
  • Huang, F., Chen, R., Guo, J., Ding, H. and Su, Y. (2017) Removal of metal impurities in metallurgical grade silicon by cold crucible continuous melting and directional solidification. Sep. Purif. Technol., 88: 67–72. doi:10.1016/j.seppur.2017.06.073.
  • Sun, J.L., Zhang, J. and Wang, H.W. (2013) Purification of metallurgical grade silicon in an electron beam melting furnace. Surf. Coat. Technol., 228: S67–S71. doi:10.1016/j.surfcoat.2012.08.039.
  • Tan, Y., Shi, S. and Guo, X.L. (2013) Effect of cooling rate on solidification of electron beam melted silicon ingots. Vacuum., 89: 12–16. doi:10.1016/j.vacuum.2012.08.013.
  • Jiang, D.C., Shi, S. and Tan, Y. (2013) Research on distribution of aluminum in electron beam melted silicon ingot. Vacuum., 96: 27–31. doi:10.1016/j.vacuum.2013.03.006.

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