Emission characteristics of 0.7” monochrome MOSFET‐controlled field emission displays in a high vacuum chamber

References

• Ghis , A. , Meyer , R. , Rambaud , P. , Levy , F. and Leroux , T. 1991 . “Sealed Vacuum Devices: Fluorescent Microtip Displays,” . IEEE Transaction on Electron Devices , 38 ( 10 ) : 2320 – 2322 .
   Web of Science ®Google Scholar
• Itoh , S. , Niiyama , T. , Taniguchi , M. and Watanabe , T. 1996 . “A New Structure of Field Emitter Arrays,” . Journal of Vacuum Science and Technology B , 14 ( 3 ) : 1977 – 1981 .
   Web of Science ®Google Scholar
• Ting , A. , Tang , C. , Swyden , T. , McCarthy , D. and Peckerar , M. “Field‐Effect Controlled Vacuum Field‐Emission Cathodes,” . International Vacuum Microelectronics Conference ‘91 Tech. Dig. pp. 200 – 201 .
   Google Scholar
• Yokoo , K. , Arai , M. , Mori , M. , Bae , J. and Ono , S. 1995 . “Active Control of the Emission Current of Field Emitter Arrays,” . Journal of Vacuum Science and Technology B , 13 ( 2 ) : 491 – 493 .
   Web of Science ®Google Scholar
• Hashiguchi , G. , Mimura , H. and Fujita , H. 1996 . “Monolithic Fabrication and Electrical Characteristics of Polycrystalline Silicon Field Emitters and Thin Film Transistor,” . Japanese Journal of Applied Physics , 35 : L84 – L86 .
   Web of Science ®Google Scholar
• Itoh , J. , Hirano , T. and Kanemaru , S. 1996 . “Ultrastable Emission from A Metal‐Oxide‐Semiconductor Field‐Effect Transistor‐Structured Si Emitter Tip,” . Applied Physics Letter , 69 ( 11 ) : 1577 – 1578 .
   Web of Science ®Google Scholar
• Kim , D. , Kwon , S. J. and Lee , J. D. “New Cathode Structures of Si‐Based Field Emitter Arrays,” . International Vacuum Microelectronics Conference ‘96 Tech. Dig. pp. 534 – 537 .
   Google Scholar
• Lee , J. D. , Kim , D. and Kim , I. H. “MOSFETs Get in FED Panels,” . International Display Workshop ‘97 Tech. Dig. pp. 715 – 718 .
   Google Scholar
• Lee , J. D. , Kim , I. H. and Oh , C. W. “Implementation of FED with MOSFET‐Controlled FEA,” . International Vacuum Microelectronics Conference ‘98 . pp. 44 – 45 .
   Google Scholar
• Inter‐University semiconductor Research Center (ISRC) and School of Electrical Eng.(SOEE), Seoul National University, San 56–1, Shillim‐dong, Kwanak‐gu, Seoul 151–742, Korea.
   Google Scholar
• Samsung SDI co., ltd, Shin‐dong 575, Paldal‐gu, Suwon‐city, Kyungki‐do 442–391, Korea.
   Google Scholar
• Student Member, KIDS.
   Google Scholar
• Member, KIDS
   Google Scholar