Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

Keun Woo Lee School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea

Hyun Soo Shin School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Kon Yi Heo School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Kyung Min Kim School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Hyun Jae Kim School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun‐Gu, Seoul, 120–749, Republic of Korea Phone: +82–2–2123–5865 Fax: +82–2–2123–5865 E-mail: [email protected]

Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

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Light effects of the amorphous indium gallium zinc oxide thin‐film transistor

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