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Journal of Information Display Volume 11, 2010 - Issue 3
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Original Articles

Effect of hydrogen in the gate insulator on the bottom gate oxide TFT

Sang‐Hee Ko Park Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI), 138 Gajeong‐no, Yuseong‐Gu, Daejeon, 305–350, Korea Phone: +82–42–860–6276 Fax: +82–42–860–6276 E-mail: [email protected]
,
Minki Ryu Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI), 138 Gajeong‐no, Yuseong‐Gu, Daejeon, 305–350, Korea
,
Shinhyuk Yang Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI), 138 Gajeong‐no, Yuseong‐Gu, Daejeon, 305–350, Korea
,
Sung Min Yoon Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI), 138 Gajeong‐no, Yuseong‐Gu, Daejeon, 305–350, Korea
&
Chi‐Sun Hwang Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI), 138 Gajeong‐no, Yuseong‐Gu, Daejeon, 305–350, Korea
Pages 113-118 | Received 17 Sep 2010, Accepted 28 Sep 2010, Published online: 08 Dec 2010

References

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