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Research Articles

Extracting the optical parameters of thermally evaporated Se film by modelling of transmittance spectra: Effect of heat treatment

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Pages 470-478 | Received 06 Nov 2019, Accepted 17 Mar 2020, Published online: 31 Mar 2020

References

  • Mott NF. Conduction and switching in non-crystalline materials. Contemp Phys. 1969;10:125. doi: 10.1080/00107516908220104
  • Jones G, Collins RA, Temple BK. Switching properties of thin selenium films under pulsed bias. Thin Solid Films. 1977;40:L15. doi: 10.1016/0040-6090(77)90093-1
  • Chou JC, Yang SY, Wang YS. Study on the optoelectronic properties of amorphous selenium-based xerographic photoreceptors for electrophotography. Mater Chem Phys. 2003;78(3):666. doi: 10.1016/S0254-0584(02)00304-8
  • Schaffert RM. Electrophotography. New York: Halsted Press; 1975.
  • Williams EM. The physics and technology of Xerographic processes, interscience. New York: John Wiley; 1984.
  • Mort J, Chen I. Physics of Xerographic photoreceptors. New York: Academic Press; 1975.
  • van Swaaij RACMM, Willems WPM, Lokker JP, et al. Electrophotographic discharge of CdS explained by a surface-depletion discharge model. J Appl Phys. 1995;77:1635. doi: 10.1063/1.358919
  • Tan WC, PhD thesis, University of Saskatchewan; 2006.
  • Zhao W, Hunt DC, Kenkichi T, et al. Amorphous selenium flat panel detectors for medical applications. Nucl Instr Meth Phys Research A. 2005;549:205. doi: 10.1016/j.nima.2005.04.053
  • Kasap SO, Rowlands JA. Review X-ray photoconductors and stabilized a-Se for direct conversion digital flat-panel X-ray image-detectors. J Mater Sci: Mat Electron. 2000;11:179.
  • Kubota M, Kato T, Suzuki S, et al. Ultrahigh-sensitivity New Super-HARP camera IEEE Trans Broadcast. 1996;42:251, (Ultrahigh-sensitivity New Super-HARP camera). doi: 10.1109/11.536588
  • Navarrete G, Maquez H, Cota L, et al. Determination of the optical properties of amorphous selenium films by a classical damped oscillator model. Appl Optics. 1990;29(19):2850. doi: 10.1364/AO.29.002850
  • Murphy KE, Altman MB, Wunderlich B. The monoclinic-to-trigonal transformation in selenium. J Appl Phys. 1977;48:4122. doi: 10.1063/1.323439
  • Pankove JI. Optical processes in semiconductors. New York: Dover; 1971.
  • Holubova J, Cemosek Z, Cemoskova E, et al. Crystallization of supercooled liquid of selenium: the comparison of kinetic analysis of both isothermal and non-isothermal DSC data. Mater Lett. 2006;60:2429. doi: 10.1016/j.matlet.2006.01.070
  • Abkowitz M. Density of states in a-Se from combined analysis of xerographic potentials and transient transport data. Philos Mag Lett. 1988;58(1):53. doi: 10.1080/09500838808214730
  • Nielsen P. Self-consistent electronic structure of solid surfaces. Phys Rev B. 1972;6(10):3739. doi: 10.1103/PhysRevB.6.3739
  • Kasap S, Juhasz C. Time-of-flight drift mobility measurements on chlorine-doped amorphous selenium films. J Phys D: Appl Phys. 1985;18:703. doi: 10.1088/0022-3727/18/4/015
  • Orlowski T, Abkowitz M. Sub-nanosecond transient photocurrents in a-Se and a-Si:H. J Non-Cryst Solids. 1985;77-78:439. doi: 10.1016/0022-3093(85)90692-1
  • T. Yashar, PhD thesis, Princeton University, (1968).
  • Noolandi J. Multiple-trapping model of anomalous transit-time dispersion in a−Se. Phys Rev B. 1977;16:4466. doi: 10.1103/PhysRevB.16.4466
  • Song H, Adriaenssens G, Emelianova E, et al. Distribution of gap states in amorphous selenium thin films. Phys Rev B. 1999;59:10607. doi: 10.1103/PhysRevB.59.10607
  • Benkhedir M, Brinza M, Adriaenssens G. Electronic density of states in amorphous selenium. J Phys.: Cond Matt. 2004;16:S5253.
  • Jellison GE. Spectroscopic ellipsometry data analysis: measured versus calculated quantities. Thin Solid Films. 1998;313-314:33. doi: 10.1016/S0040-6090(97)00765-7
  • O’Leary SK, Johnson SR, Lim PK. The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis. J Appl Phys. 1997;82(7):3334. doi: 10.1063/1.365643
  • Spitzer WG, Kleinman DA. Infrared Lattice bands of quartz. Phys Rev. 1961;121(5):1324. doi: 10.1103/PhysRev.121.1324
  • Veuleur HW. Determination of optical constants from reflectance or transmittance measurements on bulk crystals or thin films. J Opt Soc Am. 1968;10(A58). 1356. doi: 10.1364/JOSA.58.001356
  • Siqueiros J, Machorro R, Regalado LE. Determination of the optical constants of MgF2 and ZnS from spectrophotometric measurements and the classical oscillator method. Appl Opt. 1988;27:2549. doi: 10.1364/AO.27.002549
  • Gordijna JL, Arnoldbik WM, Tichelaar FD, et al. Thickness determination of thin (∼20 nm) microcrystalline silicon layers. Sol Ener Mat Sol Cells. 2005;87:445. doi: 10.1016/j.solmat.2004.09.016
  • Jellison GE, Modine FA. Parameterization of the optical functions of amorphous materials in the interband region. Appl Phys Lett. 1996;69:371. doi: 10.1063/1.118064
  • Innami T, Miyazaki T, Adachi S. Optical constants of amorphous Se. J Appl Phys. 1999;86(3):1382. doi: 10.1063/1.370898
  • Solieman A, Abu-Sehly AA. Modelling of optical properties of amorphous selenium thin films. Physica B. 2010;405:1101. doi: 10.1016/j.physb.2009.11.014
  • Tigau N. Substrate temperature effect on the optical properties of amorphous Sb2S3 thin films. Cryst Res Technol. 2006;41:474. doi: 10.1002/crat.200510608
  • Goodman A. Optical interference method for the approximate determination of refractive index and thickness of a transparent layer. Appl Opt. 1978;17:2779. doi: 10.1364/AO.17.002779
  • Schaffert RM. Electrophotography. London: Focal Press; 1980.
  • Moss TS. Photoconductivity in the elements. London: Butterworths; 1952.
  • Theiss M. Hard- and Software, http://www.mtheiss.com.
  • Aspnes DE. Dielectric function and surface microroughness measurements of InSb by spectroscopic ellipsometry. J Vac Sci Technol. 1980;17:1057. doi: 10.1116/1.570590
  • Nagels P, Sleeckx E, Marquez E, et al. Optical properties of amorphous Se films prepared by PECVD. Solid State Commun. 1997;102:539. doi: 10.1016/S0038-1098(97)00053-7
  • Bauer G. Absolute values of the optical absorption constants of alkali halide crystals in the region of their ultraviolet natural frequencies. Ann Phys. 1934;411:434. doi: 10.1002/andp.19344110405
  • Tauc J. Amorphous and Liquid semiconductor. London: Plenum Press; 1974.
  • Dias da Silva JH, Campomanes RR, Leite DMG, et al. Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs. J Appl Phys. 2004;96(12):7052. doi: 10.1063/1.1797541
  • Wemple SH. Didomenico, behavior of the electronic dielectric constant in covalent and ionic materials. Phys Rev B. 1971;3:1338. doi: 10.1103/PhysRevB.3.1338
  • Tanaka K, Ohtsuka Y. Composition dependence of photo-induced refractive index changes in amorphous AsxS films. Thin Solid Films. 1979;57:59. doi: 10.1016/0040-6090(79)90403-6