References
- Kraft A. Doped diamond: a compact review on a new, versatile electrode material. Int J Electrochem Sci. 2007;2:355–385.
- Zhao S. Theoretical studies of diamond for electronic applications. 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-283409.
- Gallin-Martel ML, Kim YH, Abbassi L, et al. Characterization of diamond and silicon carbide detectors with fission fragments. Front Phys. 2021;9:1–19.
- Liu Z, Li F, Li S, et al. Fabrication of UV photodetector on TiO 2/diamond film. Sci Rep. 2015;5:1–7. doi:https://doi.org/10.1038/srep14420.
- Amaratunga GAJ. A Dawn for carbon electronics? Science. 2002;297(80):1657–1658. doi:https://doi.org/10.1126/science.1075868.
- Kato Y, Teraji T, Power A. Key technologies for device fabrications and materials characterizations. Power Electron Device Appl Diam Semicond. 2018. doi:https://doi.org/10.1016/b978-0-08-102183-5.00004-2.
- Gole JL, Lewis SE. Porous silicon – sensors and future applications. Nanosilicon. 2008:149–175. doi:https://doi.org/10.1016/B978-008044528-1.50005-1.
- Shkir M, Khan MT, Ashraf IM, et al. High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals. Sci Rep. 2019;9:1–9. doi:https://doi.org/10.1038/s41598-019-48621-3.
- Makino T, Kato H, Ri S-G, et al. Homoepitaxial diamond p-n+ junction with low specific on-resistance and ideal built-in potential. Diam Relat Mater. 2008;17:782–785. doi:https://doi.org/10.1016/j.diamond.2007.12.006.
- Nemanich RJ, Baumann PK, van der Weide J. Diamond negative electron affinity surfaces, structures and devices. United States: N. p., 1995. Web.
- Ristein J. Electronic properties of diamond surfaces – blessing or curse for devices? Diam Relat Mater. 2000;9:1129–1137. doi:https://doi.org/10.1016/S0925-9635(99)00316-7.
- Zkria A, Abubakr E, Sittimart P, et al. Analysis of electrical characteristics of Pd/n-Nanocarbon/p-Si heterojunction diodes: by C-V-f and G/w-V-f. J Nanomater. 2020;2020:1–9. doi:https://doi.org/10.1155/2020/4917946.
- Haenen K, Lazea A, Nesládek M, et al. Rectifying properties and photoresponse of CVD diamond p(i)n-junctions. Phys Status Solidi – Rapid Res Lett. 2009;3:208–210.
- Makino T, Kato H, Ogura M, et al. Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p-n junction. Diam Relat Mater. 2006;15:513–516. doi:https://doi.org/10.1016/j.diamond.2005.11.021.
- Narayan J, Bhaumik A, Haque A. Pseudo-topotactic growth of diamond nanofibers. Acta Mater. 2019;178:179–185. doi:https://doi.org/10.1016/j.actamat.2019.08.008.
- Trusovas R, Račiukaitis G, Niaura G, et al. Recent advances in laser utilization in the chemical modification of graphene oxide and its applications. Adv Opt Mater. 2016;4:37–65. doi:https://doi.org/10.1002/adom.201500469.
- Zkria A, Abubakr E, Egiza M, et al. Structural evolution of laser-irradiated ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma. Appl Phys Express. 2020;13:0–6. doi:https://doi.org/10.35848/1882-0786/abb871.
- Stock F, Antoni F, Diebold L, et al. UV laser annealing of diamond-like carbon layers obtained by pulsed laser deposition for optical and photovoltaic applications. Appl Surf Sci. 2019;464:562–566. doi:https://doi.org/10.1016/j.apsusc.2018.09.085.
- Bentini GG, Bianconi M, Summonte C. Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphere. Appl Phys A Solids Surfaces. 1988;45:317–324. doi:https://doi.org/10.1007/BF00617938.
- Abubakr E, Zkria A, Katamune Y, et al. Formation of low resistivity layers on singlecrystalline diamond by excimer laser irradiation. Diam Relat Mater. 2019;95:166–173. doi:https://doi.org/10.1016/j.diamond.2019.04.013.
- Abubakr E, Zkria A, Ohmagari S, et al. Laser-induced phosphorus-doped conductive layer formation on single-crystal diamond surfaces. ACS Appl Mater Interfaces. 2020;12:57619–57626. doi:https://doi.org/10.1021/acsami.0c18435.
- Abubakr E, Ohmagari S, Zkria A, et al. Materials science in semiconductor processing laser-induced novel ohmic contact formation for effective charge collection in diamond detectors. Mater Sci Semicond Process. 2022;139:106370. doi:https://doi.org/10.1016/j.mssp.2021.106370.
- Braunstein G, Kalish R. Effective p-type doping of diamond by boron ion implantation. J Appl Phys. 1983;54:2106–2108. doi:https://doi.org/10.1063/1.332262.
- Haque A, Sumaiya S. An overview on the formation and processing of nitrogen-vacancy photonic centers in diamond by ion implantation. J Manuf Mater Process. 2017;1:6. doi:https://doi.org/10.3390/jmmp1010006.
- Ikeda A, Nishi K, Ikenoue H, et al. Phosphorus doping of 4H-SiC by KrF excimer laser irradiation in phosphoric solution. Jpn J Appl Phys. 2013;52:06GF02. doi:https://doi.org/10.7567/JJAP.52.06GF02.
- Takahashi K, Kurosawa M, Ikenoue H, et al. Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution. Appl Phys Lett. 2016;108:1–5. doi:https://doi.org/10.1063/1.4941236.
- Chen YG, Ogura M, Okushi H. Schottky junction properties on high quality boron-doped homoepitaxial diamond thin films. J Vac Sci Technol B Microelectron Nanom Struct. 2004;22:2084. doi:https://doi.org/10.1116/1.1768186.
- Ficek M, Sankaran KJ, Ryl J, et al. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition. Appl Phys Lett. 2016;108:2–7.
- Topsoe H. Geometric factors in four point resistivity measurement. Bridge Technol. 1968;472–13:58–59.
- Kato H, Takeuchi D, Tokuda N, et al. Characterization of specific contact resistance on heavily phosphorus-doped diamond films. Diamond Relat Mater. 2009;18:782–785.
- Kajihara SA, Antonelli A, Bernholc J, et al. Nitrogen and potential n-type dopants in diamond. Phys Rev Lett. 1991;66:2010–2013.
- Hu XJ, Li RB, Shen HS, et al. Electrical and structural properties of boron and phosphorus co-doped diamond films. Carbon NY. 2004;42:1501–1506.
- Sekiguchi T, Koizumi S. Characterization of a diamond p-n junction using electron-beam-induced current and cathodoluminescence. Appl Phys Lett. 2002;81:1987–1989.
- Kono S, Nohara T, Abe S, et al. Electron spectroscopic determination of electronic structures of phosphorus-doped n-type heteroepitaxial diamond (001) surface and junction. Jpn J Appl Phys. 2012;51:090109.
- Ohmagari S, Yamada H, Tsubouchi N, et al. Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations. Appl Phys Lett [Internet]. 2018;113. Available from: doi:https://doi.org/10.1063/1.5040658.
- Ohmagari S, Yamada H, Tsubouchi N, et al. Toward high-performance diamond electronics: control and annihilation of dislocation propagation by metal-assisted termination. Phys Status Solidi Appl Mater Sci. 2019;216:1–15.
- Bhuiyan AS, Martinez A, Esteve D.. A new richardson plot for non-ideal schottky diodes. Thin Sol Film. 1988;161:93–100.
- Vescan A, Daumiller I, Gluche P, et al. Very high temperature operation of diamond Schottky diode. IEEE Electron Device Lett. Nov. 1997;18(11):556–558. doi:https://doi.org/10.1109/55.641444.
- Traoré A, Muret P, Fiori A, et al. Zr/oxidized diamond interface for high power Schottky diodes. Appl Phys Lett. 2014;104(5): Art. no. 052105. doi:https://doi.org/10.1063/1.4864060.
- Malakoutian M, Benipal M, Koeck FA, et al. Schottky barrier height Analysis of diamond SPIND using high temperature operation up to 873 K. IEEE J Electron Devices Soc. 2020;8:614–618.
- Werner JH. Schottky barrier and pn-junctionI/V plots? small signal evaluation. Appl Phys A Solids Surfaces. 1988;47:291–300.
- Koide Y. Peculiarity of depletion region in diamond pn-junction. Jpn J Appl Physics Part 1 Regul Pap Short Notes Rev Pap. 2003;42:6800–6803. doi:https://doi.org/10.1143/jjap.42.6800.
- Suzuki M, Yoshida H, Sakuma N, et al. Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes. Appl Phys Lett. 2004;84:2349–2351. doi:https://doi.org/10.1063/1.1695206.
- Shimaoka T, Koizumi S, Tanaka MM. Diamond photovoltaic radiation sensor using pn junction. Appl Phys Lett [Internet]. 2018;113:1–5. Available from: doi:https://doi.org/10.1063/1.5034413.
- Liao M, Koide Y. High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film. Appl Phys Lett. 2006;89:3–6. doi:https://doi.org/10.1063/1.2349829.
- Liao M, Koide Y, Alvarez J. Single Schottky-barrier photodiode with interdigitated-finger geometry: application to diamond. Appl Phys Lett. 2007;90:2005–2008. doi:https://doi.org/10.1063/1.2715440.
- Benmoussa A, Soltani A, Haenen K, et al. New developments on diamond photodetector for VUV solar observations. Semicond Sci Technol. 2008;23:035026. doi:https://doi.org/10.1088/0268-1242/23/3/035026.
- Chang X, Wang YF, Zhang X, et al. UV-photodetector based on NiO/diamond film. Appl Phys Lett. 2018;112:1–6. doi:https://doi.org/10.1063/1.5004269.
- Galbiati A, Lynn S, Oliver K, et al. Performance of monocrystalline diamond radiation detectors fabricated using TiW, Cr/Au and a novel ohmic DLC/Pt/Au electrical contact. IEEE Trans Nucl Sci. 2009;56:1863–1874. doi:https://doi.org/10.1109/TNS.2009.2020428.
- Makino T, Tanimoto S, Hayashi Y, et al. Diamond Schottky- pn diode with high forward current density and fast switching operation. Appl Phys Lett. 2009;94:1–4.
- Pan LS, Kania DR, editors. Diamond: electronic properties and applications; 1995. doi:https://doi.org/10.1007/978-1-4615-2257-7.
- Shimaoka T, Umezawa H, Ichikawa K, et al. Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction. Appl Phys Lett. 2020;117:103902.
- Pace E, De Sio A. Innovative diamond photo-detectors for UV astrophysics. Mem Della Soc Astron Ital Suppl. 2010;14:84.
- Whitfield MD, Chan SSM, Jackman RB. Thin film diamond photodiode for ultraviolet light detection. Appl Phys Lett 1996;68:290–292.
- Girolami M, Serpente V, Mastellone M, et al. Self-powered solar-blind ultrafast UV-C diamond detectors with asymmetric Schottky contacts. Carbon NY. 2022;189:27–36.
- Haenen K, Lazea A, Nesládek M, et al. Rectifying properties and photoresponse of CVD diamond p(i)n-junctions. Phys Status Solidi – Rapid Res Lett. 2009;3:208.
- Wu Y, Li Z, Ang K-W, et al. Monolithic integration of MoS2 -based visible detectors and GaN-based UV detectors. Photonics Res. 2019;7:1127.
- Liu Z, Zhao D, Zhu T, et al. Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure. IEEE Electron Device Lett 2020;41:1829–1832.