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International Journal of Electronics Letters Volume 10, 2022 - Issue 3
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Articles

Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor

M. R. Jenaa Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, Burla, Sambalpur, IndiaCorrespondence[email protected] [email protected]
,
A. Diwarkara Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, Burla, Sambalpur, India
,
A. K. Pandab Department of Electronics and Telecommunication Engineering, National Institute of Science and Technology, Berhampur, India
&
G. N. Dashc School of Physics, Sambalpur University, Sambalpur, India
Pages 308-320 | Received 31 May 2020, Accepted 22 May 2021, Published online: 07 Jul 2021

References

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