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Research Article

Novel carbon nanotube model for low energy loss field-effect transistor

Soheli FarhanaDepartment of Electrical and Computer Engineering, International Islamic University Malaysia, Kuala Lumpur53100, MalaysiaCorrespondence[email protected]
ORCID Iconhttps://orcid.org/0000-0002-3731-7461View further author information
ORCID Icon |
Hugh GongUniversity of Manchester, UKView further author information
(Reviewing Editor)
Article: 1300082 | Received 29 Sep 2016, Accepted 15 Feb 2017, Published online: 09 Mar 2017

References

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  • Rajendra, P., Madhavi, B. K., & Kishore, K. L. (2012). Design of low-leakage CNTFET SRAM cell at 32 nm technology using forced stack technique. International Journal of Engineering Research and Applications, 2, 805–808.
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