Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

References

• Yamamoto Y, Imai T, Tanabe K, et al. The measurement of thermal properties of diamond. Diamond Relat Mater. 1997;6(8):1057–1061. doi:10.1016/S0925-9635(96)00772-8.
   Web of Science ®Google Scholar
• Kania DR, Landstrass MI, Plano MA, et al. Diamond radiation detectors. Diamond Relat Mater. 1993;2(5–7):1012–1019. doi:10.1016/0925-9635(93)90266-5.
   Web of Science ®Google Scholar
• Isberg J, Hammersberg J, Johansson E, et al. High carrier mobility in single-crystal plasma-deposited diamond. Science. 2023;297(5587):1670–1672. doi:10.1126/science.1074374.
   Google Scholar
• Yu S-J, Kang M-W, Chang H-C, et al. Bright fluorescent nanodiamonds: no photobleaching and low cytotoxicity. J Am Chem Soc. 2005;127(50):17604–17605.
   PubMed Web of Science ®Google Scholar
• Pingault B, Jarausch DD, Hepp C, et al. Coherent control of the silicon-vacancy spin in diamond. Nat Commun. 2017;8(1):15579. doi:10.1038/ncomms15579.
   PubMedGoogle Scholar
• Rose BC, Huang D, Zhang ZH, et al. Observation of an environmentally insensitive solid-state spin defect in diamond. Science. 2018;361(6397):60–63.
   PubMed Web of Science ®Google Scholar
• Wild C, Kohl R, Herres N, et al. Oriented CVD diamond films: twin formation, structure and morphology. Diamond Relat Mater. 1994;3(4–6):373–381. doi:10.1016/0925-9635(94)90188-0.
   Web of Science ®Google Scholar
• Yang B, Li H, Yu B, et al. Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method. Carbon. 2021;171:455–463. doi:10.1016/j.carbon.2020.09.032.
   Web of Science ®Google Scholar
• Jelezko F, Wrachtrup J. Single defect centres in diamond: a review. Phys Status Solidi (a). 2006;203(13):3207–3225. doi:10.1002/PSSA.200671403.
   Web of Science ®Google Scholar
• Nakano Y, Zhang X, Kobayashi K, et al. Impact of nitrogen doping on homoepitaxial diamond (111) growth. Diamond Relat Mater. 2022;125:108997. doi:10.1016/j.diamond.2022.108997.
   Web of Science ®Google Scholar
• Yu C, Zhou C, Guo J, et al. Hydrogen-terminated ­diamond MOSFETs on (001) single crystal diamond with state of the art high RF power density. Funct Diamond. 2022;2(1):64–70. doi:10.1080/26941112.2022.2082853.
   Google Scholar
• Fogarty F, Fox NA, May PW. Experimental studies of electron affinity and work function from titanium on oxidised diamond (100) surfaces. Funct Diamond. 2022;2(1):103–111.
   Google Scholar
• Li JP, Ren ZY, Zhang JF, et al. Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films. Acta Phys Sin. 2023;72(3):038102.
   Google Scholar
• Zhang JF, Xu JM, Ren ZY, et al. Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Phys Sin. 2020;69(2):028101.
   Google Scholar
• Liu T, Raabe D. Influence of nitrogen doping on growth rate and texture evolution of chemical vapor deposition diamond films. Appl Phys Lett. 2009;94(2):021119. doi:10.1063/1.3072601.
   Web of Science ®Google Scholar
• Wang J-J, Lü F-X Effect of pressure on the nucleation of diamond with addition of oxygen in the microwave plasma chemical vapor deposition system. Chin Phys Lett. 2008;13(6):473–476. doi:10.1088/0256-307X/13/6/020.
   Google Scholar
• Shimaoka T, Yamada H, Mokuno Y, et al. Oxygen concentration dependence in microwave plasma‐enhanced chemical vapor deposition diamond growth in the (H, C, O, N) system. Phys Status Solidi (a). 2022;219(11):2100887. doi:10.1002/pssa.202100887.
   PubMed Web of Science ®Google Scholar
• Harris SJ, Weiner AM. Effects of oxygen on diamond growth. Appl Phys Lett. 1989;55(21):2179–2181. doi:10.1063/1.102350.
   Web of Science ®Google Scholar
• Gómez-Aleixandre C, García MM, Sánchez O, et al. Influence of oxygen on the nucleation and growth of diamond films. Thin Solid Films. 1997;303(1–2):34–38. doi:10.1016/S0040-6090(97)00090-4.
   Web of Science ®Google Scholar
• Yu Z, Karlsson U, Flodström A. Influence of oxygen and nitrogen on the growth of hot-filament chemical vapor deposited diamond films. Thin Solid Films. 1999;342(1–2):74–82. doi:10.1016/S0040-6090(98)01352-2.
   Web of Science ®Google Scholar
• Neto MA, Pereira E. Influence of oxygen and nitrogen addition during growth of CVD diamond on pure cobalt substrates. Diamond Relat Mater. 2006;15(4–8):465–471. doi:10.1016/j.diamond.2005.09.015.
   Web of Science ®Google Scholar
• Tang CJ, Neves AJ, Pereira S, et al. Effect of nitrogen and oxygen addition on morphology and texture of diamond films (from polycrystalline to nanocrystalline). Diamond Relat Mater. 2008;17(1):72–78. doi:10.1016/j.diamond.2007.10.022.
   Web of Science ®Google Scholar
• Silva F, Bonnin X, Achard J, et al. Geometric modeling of homoepitaxial CVD diamond growth: i. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system. J Cryst Growth. 2008;310(1):187–203. doi:10.1016/j.jcrysgro.2007.09.044.
   Web of Science ®Google Scholar
• Silva F, Achard J, Bonnin X, et al. Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: growth on (113) oriented substrates. Diamond Relat Mater. 2008;17(7–10):1067–1075. doi:10.1016/j.diamond.2008.01.006.
   Web of Science ®Google Scholar
• Cheesman A, Harvey JN, Ashfold MNR. Studies of carbon incorporation on the diamond {100} surface during chemical vapor deposition using density functional theory. J Phys Chem A. 2008;112(45):11436–11448. doi:10.1021/jp8034538.
   PubMed Web of Science ®Google Scholar