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Editorial

Diamond research: highlights from 2023

Article: 2374566 | Received 11 Jun 2024, Accepted 25 Jun 2024, Published online: 26 Jul 2024

References

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  • Fu Y, Kawarada H, Hiraiwa A, et al. Electrical characterization of metal/Al2O3/SiO2/oxidized-Si-terminated (C-Si-O) diamond capacitors. IEEE Trans Electron Devices. 2022;69(7):3604–3610.
  • Fu Y, Chang Y, Kono S, et al. −10 V threshold voltage high-performance normally-OFF C–Si diamond MOSFET formed by p+-diamond-first and silicon molecular beam deposition. IEEE Trans Electron Devices. 2022;69(5):2236–2242.
  • Fu Y, Chang Y, Zhu X, et al. Normally-off oxidized Si-terminated (111) diamond MOSFETs via ALD-Al2O3 gate insulator with drain current density over 300 mA/mm. IEEE Trans Electron Devices. 2022;69(8):4144–4152.
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