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Original Articles

Estimating Method for Electron Beam Accelerating Voltage Used in Energy‐Dispersive X‐Ray Microanalysis: Application in Failure Analysis of Wafer Fabrication

Pages 115-126 | Received 26 May 2003, Accepted 05 Sep 2003, Published online: 18 Aug 2006

References

  • Hua , Y. , Guo , Z. R. and Chau , K. W. 1997 . Studies of ZAF standardless EDX quantification method and application in failure analysis of semiconductor . J. Trace Microprobe Techn. , 15 ( 1 ) : 13 – 31 .
  • Younan , H. 2003 . Quantification analysis of thin film layers (Si3N4, SiO2 and TiW) in wafer fabrication using energy‐dispersive x‐ray microanalysis technique . J. Trace Microprobe Techn. , 21 ( 2 ) : 25 – 34 .
  • Tertian , R. and Claisse , F. 1982 . “ Excitation sources, spectral distributions from x‐ray tubes, 37 ” . In Principles of Quantitative X‐Ray Fluorescence Analysis 34 – 35 . London : Heyden . Chapter 3

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