References
- International Technology Road Map for Semiconductors 2009 Edition, available on-line from ITRS web site or from International Sematech Inc., ITRS Department Austin, Texas, USA
- KawashimaSCrossJ S 2009 Embedded Memories for Nano-Scale VLSIs KZhang New York Springer Science + Business Media p 279
- IshiwaraHOkuyamaMArimotoY 2003 Ferroelectric Random Access Memories: Fundamentals and Applications Berlin Springer
- CrossJ SKoutsaroffI P 2010 Taikabutsu 62 162
- SeidelJ et al 2009 Nat. Mater. 8 229 http://dx.doi.org/10.1038/nmat2373
- KooYCheonJ-HYeomJ-HHaJKimS-HHongS K 2006 J. Korean Phys. Soc. 49 S514
- ZhuW-MGuoH-YYeZ-G 2008 Phys. Rev. B 78 014401 http://dx.doi.org/10.1103/PhysRevB.78.014401
- WoodwardD IReaneyI MEitelR ERandallC A 2003 J. Appl. Phys. 94 3313 http://dx.doi.org/10.1063/1.1595726
- CrossJ SShinozakiKYoshiokaTTanakaJKimS HMoriokaHSaitoK 2010 Mater. Sci. Eng. B 173 18 http://dx.doi.org/10.1016/j.mseb.2010.02.005
- AmanumaKHaseTMiyasakaY 1994 Appl. Phys. Lett. 65 3140 http://dx.doi.org/10.1063/1.112461
- BrazierMMansourSPatonEMcelfreshE 1997 Integr. Ferroelectr. 18 79 http://dx.doi.org/10.1080/10584589708221688
- TraynorS DHadnagyT DKammerdinerL 1997 Integr. Ferroelectr. 16 63 http://dx.doi.org/10.1080/10584589708013030
- ShiraneGSuzukiK 1952 J. Phys. Soc. Japan 7 333 http://dx.doi.org/10.1143/JPSJ.7.333
- SmithRAchenbchG DGersonRJamesW J 1968 J. Appl. Phys. 39 70 http://dx.doi.org/10.1063/1.1655783
- LeeE GLeeJ GKimS J 2001 J. Mater. Sci. Lett. 20 769 http://dx.doi.org/10.1023/A:1010904301577
- NishidaLOsadaMWadaSOkamotoSUenoRFunakuboHKatodaT 2005 Japan J. Appl. Phys. 44 L827 http://dx.doi.org/10.1143/JJAP.44.L827
- ZhuM-KLuP-XHouY-DSongX-MWangHYanH 2006 J. Am. Ceram. Soc. 89 3739 http://dx.doi.org/10.1111/j.1551-2916.2006.01281.x
- ChenJSunXDengJZuYLiuYLiJXingX 2009 J. Appl. Phys. 105 044105 http://dx.doi.org/10.1063/1.3068459
- CrossJ STomotaniMKotakaY 2001 Japan J. Appl. Phys. 40 L346 http://dx.doi.org/10.1143/JJAP.40.L346
- TagantsevA KStolichnovICollaE LSetterN 2001 J. Appl. Phys. 90 1387 http://dx.doi.org/10.1063/1.1381542
- LouX JZhangMRedfernS A TScottJ F 2007 Phys. Rev. B 75 224104 http://dx.doi.org/10.1103/PhysRevB.75.224104
- TangM HDongG JSugiyamaYIshiwaraH 2010 Semicond. Sci. Technol. 25 035006 http://dx.doi.org/10.1088/0268-1242/25/3/035006
- JaffeBCookW RJaffeH 1971 Piezoelectric Ceramics New York Academic p 158
- LeeH SLeeK B 1998 J. Physique IV 8 Pr9-209
- ErdemEEichelR-AKunglHHoffmannM JOzarowskiAvan TolJBrunelL C 2008 IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 55 1061 http://dx.doi.org/10.1109/TUFFC.2008.757
- CockayneEBurtonB P 2004 Phys. Rev. B 69 144116 http://dx.doi.org/10.1103/PhysRevB.69.144116
- RenX B 2004 Nat. Mater. 3 91 http://dx.doi.org/10.1038/nmat1051
- NoguchiYTanabeISuzukiMMiyayamaM 2008 J. Ceram. Soc. Japan 116 994 http://dx.doi.org/10.2109/jcersj2.116.994
- GrinbergISuchomelM RDmowskiWMasonS EDaviesP KRappeA M 2007 Phys. Rev. Lett. 98 107601 http://dx.doi.org/10.1103/PhysRevLett.98.107601
- TingtingQGrinbergIRappeA M 2009 Phys. Rev. B 79 094114 http://dx.doi.org/10.1103/PhysRevB.79.094114