Multistate resistive switching in silver nanoparticle films

References

• NomuraKOhtaHTakagiAKamiyaTHiranoMHosonoH 2004 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature432488492 488–92 10.1038/nature03090
   PubMed Web of Science ®Google Scholar
• ScottJ CBozanoL D 2007 Nonvolatile memory elements based on organic materials Adv. Mater. 19 1452 1463 1452–63 10.1002/adma.200602564
   Web of Science ®Google Scholar
• LeeM-J 2011 A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures Nat. Mater. 10 625 630 625–30 10.1038/nmat3070
   PubMed Web of Science ®Google Scholar
• KimT HJangE YLeeN JChoiD JLeeK-JJangJChoiJMoonS HCheonJ 2009 Nanoparticle assemblies as memristors Nano Lett. 9 2229 2233 2229–33 10.1021/nl900030n
   PubMed Web of Science ®Google Scholar
• SattarAFostnerSBrownS A 2013 Quantized conductance and switching in percolating nanoparticle films Phys. Rev. Lett. 111 136808 10.1103/PhysRevLett.111.136808
   PubMed Web of Science ®Google Scholar
• HuWZouLChenXQinNLiSBaoD 2014 Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method ACS Appl. Mater. Interfaces 6 5012 5017 5012–7 10.1021/am500048y
   PubMed Web of Science ®Google Scholar
• AokiYWiemannCFeyerVKimH-SSchneiderC MIll-YooHMartinM 2014 Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour Nat. Commun. 5 3473 10.1038/ncomms4473
   PubMed Web of Science ®Google Scholar
• MüllerKWeiGRaguseBMyersJ 2003 Three-dimensional percolation effect on electrical conductivity in films of metal nanoparticles linked by organic molecules Phys. Rev. B 68 155407 10.1103/PhysRevB.68.155407
   Web of Science ®Google Scholar
• LeeH-HChouK-SHuangK-C 2005 Inkjet printing of nanosized silver colloids Nanotechnology 16 2436 2441 2436–41 10.1088/0957-4484/16/10/074
   PubMed Web of Science ®Google Scholar
• WaserRAonoM 2007 Nanoionics-based resistive switching memories Nat. Mater. 6 833 840 833–40 10.1038/nmat2023
   PubMed Web of Science ®Google Scholar
• FairfieldJ ARitterCBellewA TMccarthyE KFerreiraM S 2014 Effective electrode length enhances electrical activation of nanowire networks : experiment and simulation ACS Nano 8 9542 9549 9542–9 10.1021/nn5038515
   PubMed Web of Science ®Google Scholar
• StrachanD RSmithD EJohnstonD EParkT-HTherienM JBonnellD AJohnsonA T 2005 Controlled fabrication of nanogaps in ambient environment for molecular electronics Appl. Phys. Lett. 86 043109 10.1063/1.1857095
   Web of Science ®Google Scholar
• KhondakerS IYaoZ 2002 Fabrication of nanometer-spaced electrodes using gold nanoparticles Appl. Phys. Lett. 81 4613 10.1063/1.1528285
   Web of Science ®Google Scholar
• ParkHLimA K LAlivisatosA PParkJMceuenP L 1999 Fabrication of metallic electrodes with nanometer separation by electromigration Appl. Phys. Lett. 75 301 303 301–3 10.1063/1.124354
   Web of Science ®Google Scholar
• HoP SKwokT 1989 Electromigration in metals Rep. Prog. Phys. 52 301 348 301–48 10.1088/0034-4885/52/3/002
   Web of Science ®Google Scholar
• ReichelRPartridgeJ GDunbarA D FBrownS ACaughleyOAyeshA 2006 Construction and application of a UHV compatible cluster deposition system J. Nanoparticle Res. 8 405 416 405–16 10.1007/s11051-005-9021-1
   Web of Science ®Google Scholar
• ChouK-SLaiY-S 2004 Effect of polyvinyl pyrrolidone molecular weights on the formation of nanosized silver colloids Mater. Chem. Phys. 83 82 88 82–8 10.1016/j.matchemphys.2003.09.026
   Web of Science ®Google Scholar
• HuangC-HHuangJ-SLaiC-CHuangH-WLinS-JChuehY-L 2013 Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate ACS Appl. Mater. Interfaces 5 6017 6023 6017–23 10.1021/am4007287
   PubMed Web of Science ®Google Scholar
• AvizienisA VSillinH OMartin-OlmosCShiehH HAonoMStiegA ZGimzewskiJ K 2012 Neuromorphic atomic switch networks PLoS One 7 e42772 10.1371/journal.pone.0042772
   PubMed Web of Science ®Google Scholar
• SahaS K 2004 Observation of giant dielectric constant in an assembly of ultrafine Ag particles Phys. Rev. B 69 125416 10.1103/PhysRevB.69.125416
   Web of Science ®Google Scholar
• CölleMBüchelMde LeeuwD M 2006 Switching and filamentary conduction in non-volatile organic memories Org. Electron. 7 305 312 305–12 10.1016/j.orgel.2006.03.014
   Web of Science ®Google Scholar
• SillinH OSandoukE JAvizienisA VAonoMStiegA ZGimzewskiJ K 2014 Benchtop fabrication of memristive atomic switch networks J. Nanosci. Nanotechnol. 14 2792 2798 2792–8 10.1166/jnn.2014.8636
   PubMed Web of Science ®Google Scholar
• JoglekarY NWolfS J 2009 The elusive memristor: properties of basic electrical circuits Eur. J. Phys. 30 661 675 661–75 10.1088/0143-0807/30/4/001
   Web of Science ®Google Scholar
• TrouwborstM Lvan der MolenS Jvan WeesB J 2006 The role of Joule heating in the formation of nanogaps by electromigration J. Appl. Phys. 99 114316 10.1063/1.2203410
   Web of Science ®Google Scholar
• LeonardW FRameyR L 1966 Temperature coefficient of resistance in thin metal films J. Appl. Phys. 37 3634 10.1063/1.1708921
   Web of Science ®Google Scholar
• QinX YZhangWZhangL DJiangL DLiuX JJinD 1997 Low-temperature resistance and its temperature dependence in nanostructured silver Phys. Rev. B 56 596 604 596–604 10.1103/PhysRevB.56.10596
   Web of Science ®Google Scholar
• HeremansPGelinckG HMüllerRBaegK-JKimD-YNohY-Y 2011 Polymer and organic nonvolatile memory devices Chem. Mater. 23 341 358 341–58 10.1021/cm102006v
   Web of Science ®Google Scholar