Dependence of Efficiency-Droop Effect on the Location of High Indium Layer in Staggered InGaN Quantum Wells

References

• Nakamura , S. , Senoh , S. , Iwasa , N. and Nagahama , S. 1995 . Highbrightness InGaN blue, green and yellow light-emitting diodes with quantum well structures . Jpn. J. Appl. Phys. , 34 : L797 – L799 .
   Web of Science ®Google Scholar
• Lee , Y.-J. , Lu , T.-C. , Kuo , H.-C. and Wang , S.-C. 2007 . High brightness GaN-based light emitting diodes . IEEE Journal of Display Technology , 3 ( No. 2 ) : 118 – 125 .
   Google Scholar
• Zhao , J. , Li , K. , Kong , F. and Liu-Ge , D. 2010 . Enhancement of blue light emission using surface plasmons coupling with quantum wells . Progress In Electromagnetics Research , 108 : 293 – 306 .
   Google Scholar
• Chen , J.-Y. , Yeh , J.-Y. , Chen , L.-W. , Li , Y.-G. and Wang , C.-C. 2009 . Design and modeling for enhancement of light extraction in light-emitting diodes with archimedean lattice photonic crystals . Progress In Electromagnetics Research B , 11 : 265 – 279 .
   Google Scholar
• Liu , C.-C. , Chang , Y.-H. , Yang , T.-J. and Wu , C.-J. 2009 . Narrowband filter in a heterostructured multilayer containing ultrathin metallic films . Progress In Electromagnetics Research , 96 : 329 – 346 .
   Web of Science ®Google Scholar
• Banerjee , A. 2009 . Enhanced refractometric optical sensing by using one-dimensional ternary photonic crystals . Progress In Electromagnetics Research , 89 : 11 – 22 .
   Web of Science ®Google Scholar
• Crawford , M. H. 2009 . Performance challenges and recent advances . IEEE J. of Sel. Topics Quantum Electron. , 15 ( No. 4 ) : 1028 – 1040 .
   Google Scholar
• Lee , Y.-J. , Chen , C.-H. and Lee , C.-J. 2010 . Reduction in the efficiencydroop effect of InGaN green light-emitting diodes using gradual quantum wells . IEEE Photon. Technol. Lett. , 22 ( No. 20 ) : 1506 – 1508 .
   Google Scholar
• Cragg , G. E. and Efros , A. L. 2010 . Suppression of auger processes in confined structures . Nano Letters , 10 : 313 – 317 .
   PubMed Web of Science ®Google Scholar
• Kim , M.-H. , Schubert , M. F. , Dai , Q. , Kim , J. K. , Schubert , E. F. , Piprek , J. and Park , Y. 2007 . Origin of efficiency droop in GaNbased light-emitting diodes . Appl. Phys. Lett. , 91 : 183507-1 – 183507-3 .
   Google Scholar
• Shen , Y. C. , Müller , G. O. , Watanabe , S. , Gardner , N. F. , Munkholm , A. and Krames , M. R. 2007 . Auger recombination in InGaN measured by photo-luminescence . Appl. Phys. Lett. , 91 : 141101-1 – 141101-3 .
   Google Scholar
• Jang , C.-H. , Sheu , J. K. , Tsai , C. M. , Shei , S. C. , Lai , W. C. and Chang , S. J. 2008 . Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs . IEEE Photon. Technol. Lett. , 20 ( No. 13 ) : 1142 – 1144 .
   Google Scholar
• Wang , C.-H. , Chen , J.-R. , Chiu , C.-H. , Kuo , H.-C. , Lee , Y.-L. , Lu , T.-C. and Wang , S.-C. 2010 . Temperature-dependent electroluminescence efficiency in blue InGaN-GaN light-emitting diodes with different well widths . IEEE Photon. Technol. Lett. , 22 ( No. 4 ) : 236 – 238 .
   Google Scholar
• Tsai , M.-C. , Yen , S.-H. and Kuo , Y.-K. 2010 . Carrier transportation and internal quantum efficiency of blue InGaN light-emitting diodes with P-doped barriers . IEEE Photon. Technol. Lett. , 22 ( No. 6 ) : 374 – 376 .
   Google Scholar
• Park , S.-H. , Ahn , D. and Kim , J.-W. 2009 . High-efficiency staggered 530nm InGaN/InGaN/GaN quantum-well light-emitting dodes . Appl. Phys. Lett. , 94 : 041109-1 – 041109-3 .
   Google Scholar
• Zhao , H. , Liu , G. , Li , X.-H. , Hiang , G. S. , Poplawsky , J. D. , Penn , S. T. , Dierolf , V. and Tansu , N. 2009 . Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520–525nm employing graded growth-temperature profile . Appl. Phys. Lett. , 95 : 061104-1 – 061104-3 .
   Google Scholar
• Talele , K. , Samuel , E. P. and Patil , D. S. 2008 . Investigation of near field intensity in GaN MQW in 300–375 nanometer wavelength ranges . Journal of Electromagnetic Waves and Applications , 22 ( No. 8–9 ) : 1122 – 1130 .
   Google Scholar
• SiLENSe . St.-Petersburg , , Russia : STR Group, Ltd . http://www.str-soft.com
   Google Scholar
• Oubram , O. , Gaggero-Sager , L. M. , Bassam , A. and Luna Acosta , G. A. 2010 . Transport and electronic properties of two dimensional electron gas in delta-migfet in GaAs . Progress In Electromagnetics Research , 110 : 59 – 80 .
   Web of Science ®Google Scholar
• Sihvola , A. and Lindell , I. 1992 . Polarizability modeling of heterogeneous media . Progress In Electromagnetics Research , 6 : 101 – 151 .
   Google Scholar
• Agarwal , K. , Chen , X. , Hu , L. , Liu , H. and Uhlmann , G. 2011 . Polarization-invariant directional cloaking by transformation optics . Progress In Electromagnetics Research , 118 : 415 – 423 .
   Google Scholar
• Romanov , A. E. , Baker , T. J. , Nakamura , S. and Speck , J. S. 2006 . Strain-induced polarization in wurtzite III-nitride semipolar layers . J. Appl. Phys. , 100 : 023522-1 – 023522-10 .
   Google Scholar
• Chuang , S. L. and Chang , C. S. 1996 . k·p method for strained wurtzite semiconductors . Phys. Rev. B , 54 : 2491 – 2504 .
   PubMed Web of Science ®Google Scholar
• Ma , J.-J. , Cao , X.-Y. , Yu , K.-M. and Liu , T. 2009 . Determination the material parameters for arbitrary cloak based on Poisson's equation . Progress In Electromagnetics Research M , 9 : 177 – 184 .
   Google Scholar
• Cao , P. , Zhang , X. , Cheng , L. and Meng , Q. 2009 . Far field imaging research based on multilayer positiveand negativerefractive-index media under off-axis illumination . Progress In Electromagnetics Research , 98 : 283 – 298 .
   Google Scholar
• Jin , Y. 2010 . Improving subwavelength resolution of multilayered structures containing negative-permittivity layers by flatting the transmission curves . Progress In Electromagnetics Research , 105 : 347 – 364 .
   Google Scholar
• Zhang , Y.-Q. and Ge , D.-B. 2009 . A unified FDTD approach for electromagnetic analysis of dispersive objects . Progress In Electromagnetics Research , 96 : 155 – 172 .
   Web of Science ®Google Scholar
• Chen , J. and Liu , Q. H. 2009 . A non-spurious vector spectral element method for Maxwell’s equations . Progress In Electromagnetics Research , 96 : 205 – 215 .
   Google Scholar
• Slob , E. C. , Hunziker , J. W. and Mulder , W. A. 2010 . Green’s tensors for the diffusive electric field in a VTI half-space . Progress In Electromagnetics Research , 107 : 1 – 20 .
   Google Scholar
• Talele , K. and Patil , D. S. 2008 . Analysis of wave function, energy and transmission coefficients in GaN/AlGaN superlattice nanostructures . Progress In Electromagnetics Research , 81 : 237 – 252 .
   Web of Science ®Google Scholar
• Al-Jarro , A. , Sewell , P. , Benson , T. M. , Vukovic , A. and Paul , J. 2010 . Transient time-dependent electric field of dielectric bodies using the volterra integral equation in three dimensions . Progress In Electromagnetics Research , 110 : 179 – 197 .
   Google Scholar
• Shockley , W. and Read , W. T. Jr. 1952 . Statistics of the recombinations of holes and electrons . Phys. Rev. , 87 ( No. 5 ) : 835 – 842 .
   Google Scholar
• Vurgaftman , I. and Meyer , J. R. 2003 . Band parameters for nitrogencontaining semiconductors . J. Appl. Phys. , 94 : 3675 – 3696 .
   Web of Science ®Google Scholar
• Tsai , M.-C. , Yen , S.-H. and Kuo , Y.-K. 2011 . Investigation of blue InGaN light-emitting diodes with step-like quantum well . Appl. Phys. A , 104 : 621 – 626 .
   Google Scholar