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Materials Research Innovations Volume 19, 2015 - Issue sup9: 2015 International Conference on Materials Science (ICMS2015)
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Research Papers

Influence of oxygen partial pressure on the properties of PZT thin film deposited by RF magnetron sputtering

D. Zhou;University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China
,
C. T. Yang;State key laboratory of Electronic Thin Films and Integrated DevicesChengdu, 610000, ChinaCorrespondence[email protected]
,
Y. X. Y. Yang;University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China
,
Y. Zhang;State key laboratory of Electronic Thin Films and Integrated DevicesChengdu, 610000, China
,
W. X. Zhu;University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China
,
X. M. Li;State key laboratory of Electronic Thin Films and Integrated DevicesChengdu, 610000, China
,
Z. X. Fang;University of Electronic Science and Technology of China, UESTC, Chengdu, 610000, China
&
Q. J. Hu;State key laboratory of Electronic Thin Films and Integrated DevicesChengdu, 610000, China
 show all
Pages S9-360-S9-363 | Received 28 Oct 2014, Accepted 17 Dec 2014, Published online: 23 Nov 2015

References

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  • M. Brazier and S. Mansour: ‘Ferroelectric fatigue of Pb(Zr,Ti)O3 thin films measured in atmospheres of varying oxygen concentration’, Appl. Phys. Lett., 1999, 74, 4032–4033.
  • T. S. Kim and D. J. Kim: ‘Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method’, Int. J. Mater. Res, 1998, 13, 3436–3441.
  • K. V. Im and W. K. Choo: ‘The perovskite phase formation of 0.4Pb(Yb1/2Nb1/2)O3-0.6PbTiO3 thin films prepared on Pt/Ti electrode by reactive magtron sputtering’, Int. J. Eur. Ceram. Soc., 2001, 21, 1553–1556.
  • R. Laishram and O. P. Thakur: ‘Nanostructured PZT/PT multilayered thin fi lms prepared by sol– gel process’, Int. Mater. Lett., 2014, 137, 49–51.
  • M. V. Kamenshchikov and A. V. Solnyshkin: ‘Conductivity and current–voltage characteristics of PZT thin film heterostructures’, Int. Phys. Solid State, 2011, 53, 2080–2084.
  • H. Kim and J.-H. Kim: ‘Ferroelectric properties of PZT films on LaNiO3 bottom electrode deposited under different oxygen partial pressure’, Int. J. Eur. Ceram. Soc., 2005, 25, 2253–2256.
  • J. Karasawa and T. Aoyama: ‘Improvement in D-E hysteresis curve squareness of PZT thin films—effect of oxygen partial pressure in high-pressure post-annealing’, Int. Integr. Ferroelectrics, 2003, 52, 137–145.
  • C. K. Barlingay and S. K. Dey: ‘Dopant compensation mechanism and leakage current in Pb- (Zr0.52Ti0.48) O3 thin films’, Int. Thin Solid Films, 1996, 272, 112–115.
  • A. Etin and G. E. Shter: ‘Surface composition and imprint in CSD based PZT films’, Int. J. Am. Ceram. Soc., 2007, 90, 3800–3803.

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