References
- S. Nagata, T. Ueda, A. Noma, H. Koizumi, K. Kanazawa, H. Ishida, T. Ueda, T. Tanaka, D. Ueda, M. Kazumura, G. Kano and C. Paz de Araujo: ISSCC Dig. Technot Paper., 1993, 172–173.
- M. Nishitsuji, T. Uda, T Yokoyama, K. Fujimoto, K. Nishi, M. Shibuya, M. Kitagawa and A. Tamura: Semicond ScL Technol., 1995, 10, 1534–1540.
- J. Celinska, V. Joshi, S. Narayan, L. McMillan and C. Paz de Araujo: Appl. Phys. Lett., 2003, 82, 3937–3939.
- M. Nakamura, T. Higuchi, Y. Hachisu and T. Tsukamoto: Jpn J. Appl. Phys., 2004, 43, 1449–1453.
- N. Inoue, T. Nakura and Y. Hayashi: IEEE Trans. Electron device, 2003, 50, (10), 2081–2086.
- F. Ali and A. Gupta: `HEMTs and HBTs: devices, fabrication and circuits', 3–5; 1991, Boston, Artech House, Inc.
- F. Ali and A. Gupta: `HEMTs and HBTs: devices, fabrication and circuits', 5–7; 1991, Boston, Artech House, Inc.
- N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa and K. Ogi: Jpn J. Appl. Phys., 1994, 33, 5268–5271.
- P. Padmini, T. R. Taylor, M. J. Lefevre, A. S. Nagra and R. A. York: Appl. Phys. Lett., 1999, 75, (20), 3186–3188.
- F. Engelmark, J. Westlinder, G. F. Iriate, I. V. Katardjiev and J. Olsson: IEEE Trans. Electron device, 2003, 50, (5), 1214–1219.
- K. Kishiro, N. Inoue, S.-C. Chen and M. Yoshimaru: Jpn J. Appl. Phys., 1998, 37, 1336–1339.
- S. Yamamichi, A Yamamichi, D. Park and T.-J. King: IEEE Trans. Electron device, 46, (2), 1999, 342–347.
- Z. Xu, M. Houssa, S. Degendt and M. Heyns: Appl. Phys. Lett., 2002, 80, 1975–1977.
- G.A. smolenskii and K. I. Rozgachev: Zh. Tekh. Fiz., 1954, 24, 1751–1760.
- C. S. Hwang and S. H. Joo: J. Appl. Phys., 1999, 85, (4), 2431–2436.