Advanced search
Publication Cover
International Journal of Nanomedicine Volume 14, 2019 - Issue
Submit an article Journal homepage
136
Views
6
CrossRef citations to date
0
Altmetric
Original Research

A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications

Mingzhi Dai1 Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Beijing 315201, People’s Republic of China;2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
,
Yongbin Hu3 Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China
,
Changhe Huo1 Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Beijing 315201, People’s Republic of China
,
Thomas J Webster4 Northeastern University , Boston, MA, USACorrespondence[email protected]
&
Liqiang Guo3 Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China
Pages 5691-5696 | Published online: 23 Jul 2019

References

  • Meena J, Sze S, Chand U, Tseng T. Overview of emerging nonvolatile memory technologies. Nanoscale Res Lett. 2014;9:526. doi:10.1186/1556-276X-9-52625278820
  • Ke Y, Wang S, Liu G, Li M, White T, Long Y. Vanadium dioxide: the multistimuli responsive material and its applications. Small. 2018;14:1802025. doi:10.1002/smll.v14.39
  • Zhou L, Mao J, Ren Y, et al. Biological spiking synapse constructed from solution processed bimetal core-shell nanoparticle based composites. Small. 2018;14:1800288. doi:10.1002/smll.v14.28
  • Luo Y, Chen C, Hong D, He X, Wang J. Thermal-induced dielectric switching with 40K wide hysteresis loop near room temperature. J Phys Chem Lett. 2018;9:2158–2163. doi:10.1021/acs.jpclett.8b0059729644865
  • Martins R, Barquinha P, Pereira L, et al. Write-erase and read paper memory transistor. Appl Phys Lett. 2008;93:203501. doi:10.1063/1.3030873
  • Martins R, Barquinha P, Pereira L, et al. Selective floating gate non-volatile paper memory transistor. Phys Status Solidi-R. 2009;3:308–310. doi:10.1002/pssr.200903268
  • Bernabe L. Memristors fire away. Nat Electron. 2018;1:100. doi:10.1038/s41928-018-0028-x
  • Dennard RH. Field-effect transistor memory. IEEE Solid-State Circuits Newsletter 2008;13(1):17–25. doi:10.1109/n-ssc.2008.4785686.
  • Liu C, Yan X, Song X, Ding S, Zhang DW, Zhou P. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications. Nat Nanotechnol. 2018;13:404. doi:10.1038/s41565-018-0102-629632398
  • Emin S, Singh SP, Han L, Satoh N, Islam A. Colloidal quantum dot solar cells. Solar Energy. 2011;85:1264–1282. doi:10.1016/j.solener.2011.02.005
  • Dong H, Zhang X, Zhao D, et al. High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires. Nanoscale. 2012;4:2571. doi:10.1039/c2nr30133d22419367
  • Dai M, Guan J, Song Z. A memory structure with different control gates. Adv Funct Mater. 2018;4:1800186. doi:10.1002/aelm.v4.7
  • Wang Z, Xu HY, Li XH, et al. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv Funct Mater. 2012;22:2759. doi:10.1002/adfm.v22.13
  • Kim K, Jung YH, Jung WK, et al. Batteries: encapsulated monoclinic sulfur for stable cycling of li-s rechargeable batteries. Adv Mater. 2013;25:1693. doi:10.1002/adma.20137028623281020
  • Lai Q, Zhang L, Li Z, Stickle WF, Williams RS, Chen Y. Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions. Adv Mater. 2010;22:2448. doi:10.1002/adma.v22:2220446309
  • Fancher RE, Rutherford A. Pioneers of Psychology: A History. New York (NY): W. W. Norton & Company, Inc; 2012:357.
  • Wang W, Wang P, Dai M. Simplification of sub-gap density of states extraction method for amorphous In-Ga-Zn-O thin-film transistors by a single capacitance-voltage curve. Microelectron Reliab. 2018;83:111–114. doi:10.1016/j.microrel.2018.01.007
  • Alshammari H, Hota MK, Alshareef HN. Transparent electronics using one binary oxide for all transistor layers. Small. 2018;14:1803969. doi:10.1002/smll.v14.51
  • Ertosun MG, Kapur P, and Saraswat KC. A highly scalable capacitorless double gate quantum well single transistor DRAM: 1T-QW DRAM. IEEE Electron Devices Soc 2008;29:6. doi:10.1109/led.2008.2007508.
  • Hasegawa T, Itoh Y, Tanaka H, et al. Volatile/nonvolatile dual-functional atom transistor. Appl Phys Express. 2010;4:015204. doi:10.1143/APEX.4.015204
  • Wang Q, Xu HY, Li XH, Yu H, Liu YC, Zhu XJ. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv Funct Mater. 2012;22:2759–2765. doi:10.1002/adfm.v22.13

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.