References
- AK Geim, and K S Novoselov, “The rise of graphene,” Nature Materials, Vol. 6, pp. 183–91, Mar. 2007.
- C Berger, Z Song, X Li, X Wu, N Brown, and C Naud, et al., ”Electronic confinement and coherence in. patterned epitaxial graphene,” Science, Vol. 312, pp. 1191–6, May 2006.
- A Rycerz, J Tworzydlo, and C W J Beenakker, “Valley filter and valley valve in graphene,” Nature Phys., Vol. 3, pp. 172–5, Mar. 2007.
- M C Lemme, T J Echtermeyer, M Baus, and H Kurz, “A graphene field effect device,” IEEE Electron Device Lett., Vol. 28, pp. 282–4, Apr. 2007.
- X Wang, Y Ouyang, X Li, H Wang, J Guo, and H Dai, “Room-temperature all-semiconducting sub-10-nm Graphene nanoribbon field-effect transistors,” Phys. Rev. Lett., Vol. 100, pp. 206803-1-4, May 2008.
- K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, and S V Dubonos, et al., ”Electric field effect in atomically thin carbon films,” Science, Vol. 306, pp. 666–9, Oct. 2004.
- K S Novoselov, A K Geim, S V Morozov, D Jiang, Y Zhang, and S V Dubonos, et al., ”Two-dimensional gas of massless Dirac fermions in graphene,” Nature, Vol. 438, pp. 197–200, Nov. 2005.
- Y B Zhang, Y W Tan, H L Stormer, and P Kim, “Experimental observation of the quantum Hall effect and Berry’s phase in graphene,” Nature, Vol. 438, pp. 201–4, Nov. 2005.
- L F Mao, “A theoretical analysis of field emission from graphene nanoribbons,” Carbon, vol. 49, pp. 2709–14, July. 2011.
- L F Mao, X J Li, Z O Wang, and J Y Wang, “ The gate leakage current in graphene field effect device,” IEEE Electron Device Lett., Vol. 29, pp. 1047–9, Sept. 2009.
- L F Mao, X J Li, C Y Zhu, Z O Wang, Z H Lu, and J F Yang, et al., ”Finite size effects on the thermionic emission in metal-graphene nanoribbon contacts,” IEEE Electron Device Lett., Vol. 31, pp. 491–3, May. 2010.
- L F Mao, “Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors,” Nanotechnology, Vol. 20, pp. 275203-1–275203-4, July. 2009.
- P F Bagwell, and T P Orlando, “Landauer’s conductance formula and its generalization to finite voltages,” Phys. Rev. B, Vol. 40, pp. 1456–64, July. 1989.
- S M Sze, “Physics of Semiconductor Devices”, Hoboken, NJ: Wiley; 1981.
- W W Lui, and M Fukuma, “Exact solution of the Schrodinger equation across an arbitrary one-dimensional piecewise-linear potential barrier,” J. Appl. Phys., Vol. 60, pp. 1555–9. Sept. 1986.
- D Hsu, M Hsu, C Tan, and Y Wang, “Calculations of resonant tunneling levels across arbitrary potential barriers,” J. Appl. Phys., Vol. 72, pp. 4972–4. Nov. 1992.
- D Bohm, “Quantum theory”, Englewood Cliffs, New Jersy: Prentice Hall Inc.; 1951.
- H Schmidt, T Lüdtke, P Barthold, E McCann, V I Fal’ko, and R J Haug, “Tunable graphene system with two decoupled monolayers,” Appl. Phys. Lett., Vol. 93, pp. 172108-1–172108-3, Oct. 2008.
- G Giovannetti, P A Khomyako, G Brocks, V M Karpan, J van den Brink, and P J Kelly, “Doping Graphene with metal contacts,” Phys. Rev. Lett., Vol. 101, pp. 026803-1-4, July. 2008.
- T Fang, A Konar, H Xing, and D Jena, “Carrier statistics and quantum capacitance of graphene sheets and ribbons,” Appl. Phys. Lett., Vol. 91, pp. 092109-1–092109-3, Aug. 2007.