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Original Articles

Aging Model for a 40 V Nch MOS, Based on an Innovative Approach

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Pages 191-196 | Published online: 01 Sep 2014

References

  • R H Tu, E Rosenbaum, W Y Chan, C C Li, E Minami, and K Quader, et al, “Berkeley Reliability Tools-BERT”, IEEE Trans. On Computer-Aided Design of Integrated Circuits And Systems, Vol. 12, No. 10, pp. 1524–34, Oct. 1993.
  • F Alagi, “A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs”, “Microelectronics Reliability”, Vol. 51, No. 2, pp. 321–5, Feb. 2011.
  • F Alagi, “DMOS FET parameter drift kinetics from microscopic modeling”, Microelectronics Reliability, Vol. 50, No. 1, pp. 57–62, Jan. 2010.
  • “Eldo UDRM User’s Manual - Release AMS 2010.1”, Mentor Graphics Corporation, pp.31–61, 2010.

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