References
- O Le Neel, and M Haond, “Electrical transient study of negative resistance in SOI MOStransistors”, Electron. Lett. Vol. 26, pp. 73–4, Jan. 1990.
- W Jin, W Liu, S K Fung, P C Chan, and C H Hu, “SOI thermal impedance extraction methodology and its significance for circuit simulation”, IEEE Trans. Electron De- vices, Vol. 48, pp. 730–6, Apr. 2001.
- K A Jenkins, and J Y Sun, “Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET’s without self-heating”, IEEE Electron Device Letters, Vol. 16, pp.145–7, Apr. 1995.
- HiSIM HV 1.2.1 User’s Manual, Hiroshima University and STARC, 2010.
- BSIMSOI4.3 MOSFET MODEL User’s Manual, BSIM group, Berkeley: University yof California; 2009.
- R Koh, and T Iizuka, “Self heating parameter extraction of power MOSFET based on the transient drain current measurement”, 8th Internal workshop on compact modeling (IWCM’11), Yokohama, pp.53–7, Jan. 2011.
- N Yasuda, S Ueno, K Taniguchi, C Hamaguchi, Y Yamaguchi, and T Nishimura, “Analytical device model of SOI MOSFETs including self-heating effect”, Jpn J Appl Phys Vol. 30, No. 12B, pp.3677–84, Dec. 1991.
- R Koh, and T Iizuka, “Self-heating parameter extraction of power MOSFETs based on transient drain current measurements and on the 2-cell self-heating model ”, Proceedings of the 2012 IEEE International conference on microelectronic test structures, San Diego, pp.191–5, Mar. 2012.