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Original Articles

Studies on Anisotype Si/Si1-xGex Heterojunction DDR IMPATTs: Efficient Millimeter-wave Sources at 94 GHz Window

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Pages 424-432 | Published online: 01 Sep 2014

References

  • T A Midford, and R L Bernick, “Millimeter Wave CW IMPATT diodes and Oscillators,” IEEE Trans. Microwave Theory Tech., Vol. 27, pp. 483–92, 1979.
  • Y Chang, J M Hellum, J A Paul, and K P Weller, “Millimeter-Wave IMPATT Sources for Communication Applications,” IEEE MTT-S International Microwave Symposium Digest, pp. 216–9, 1977.
  • W W Gray, L Kikushima, N P Morentc, and R J Wagner, “Applying IMPATT Power Sources to Modern Microwave Systems,” IEEE Journal of Solid-State Circuits, Vol. 4, pp. 409–13, 1969.
  • A Acharyya, and J P Banerjee, “Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time Based Approach to Determine the Upper Cut-off Frequency Limits,” IETE Journal of Research, Vol. 59, no. 2, pp. 118–127, 2013.
  • A Acharyya, S Banerjee, and J P Banerjee, “Calculation of Avalanche Response Time for Determining the High Frequency Performance Limitations of IMPATT Devices,” Journal of Electron Devices, Vol. 12, pp. 756–60, 2012.
  • A Acharyya, and J P Banerjee, “Analysis of Photo-Irradiated Double-Drift Region Silicon Impact Avalanche Transit Time Devices in the Millimeter-wave and Terahertz Regime,” Terahertz Science and Technology, Vol. 5, no. 2, pp. 97–113, 2012.
  • A Acharyya, S Banerjee, and J P Banerjee, “Effect of Junction Temperature on the Large-Signal Properties of a 94 GHz Silicon Based Double-Drift Region Impact Avalanche Transit Time Device,” Journal of Semiconductors, Vol. 34, no. 2, pp. 024001–12, 2013.
  • A Acharyya, S Banerjee, and J P Banerjee, “Large-Signal Simulation of 94 GHz Pulsed DDR Silicon IMPATTs Including the Temperature Transient Effect,” Radioengineering, Vol. 21, no. 4, pp. 1218–25, 2012.
  • “Electronic Archive: New Semiconductor Materials, Characteristics and Properties”, available from: http://www.ioffe.ru/SVA/NSM/ Semicond [Last accessed on Oct 2012].
  • J F Luy, H Jorke, H Kibbel, A Kasel, and E Kasper, “A Si/SiGe heterostructure MITATT diode,” Electron Lett., Vol. 24, no. 22, pp. 1386–7, 1988.
  • J K Mishra, A K Panda, and G N Dash, “Design optimization of a single sided Si/SiGe heterostructure mixed tunneling avalanche transit time double drift region,” Semiconductor Science and Technology, Vol. 12, pp. 1635–40, 1997.
  • H K Gummel, and J L Blue, “A small-signal theory of avalanche noise in IMPATT diodes,” IEEE Trans. on Electron Devices, Vol. 14, no. 9, pp. 569–80, 1967.
  • S K Roy, M Sridharan, R Ghosh, and B B Pal, “Computer methods for the dc field and carrier current profiles in impatt devices starting from the field extremum in the depletion layer,” Proc. of NASECODE-I Conf. on Numerical Analysis of Semiconductor Devices (Dublin: Boole Press), pp. 266–74, 1979.
  • D L Scharfetter, and H K Gummel, “Large-Signal Analysis of a Silicon Read Diode Oscillator,” IEEE Trans. on Electron Devices, Vol. 16, no. 1, pp. 64–77, 1969.
  • S K Roy, J P Banerjee, and S P Pati, “A computer analysis of the distribution of high frequency negative resistance in the depletion layers of impatt diodes,” Proc. of NASECODE-IV Conf. on Numerical Analysis of Semiconductor Devices (Dublin: Boole Press), pp. 494–500, 1985.
  • S M Sze, and R M Ryder, “Microwave Avalanche Diodes,” Proc. of IEEE, Special Issue on Microwave Semiconductor Devices, Vol. 59, no. 8, pp. 1140–54, 1971.
  • J F Luy, A Casel, W Behr, and E Kasper, “A 90-GHz double-drift IMPATT diode made with Si MBE,” IEEE Trans. Electron Devices, Vol. 34, no. 5, pp. 1084–9, 1987.
  • C Dalle, P Rolland, and G Lieti, “Flat doping profile double-drift silicon IMPATT for reliable CW highpower high-efficiency generation in the 94-GHz window,” IEEE Trans Electron Devices, Vol. 37, no. 1 pp. 227–36, 1990.
  • W N Grant, “Electron and hole ionization rates in epitaxial Silicon,” Solid State Electron, Vol. 16, no. 10, pp. 1189–203, 1973.
  • C Canali, G Ottaviani, and A A Quaranta, “Drift velocity of electrons and holes and associated anisotropic effects in silicon”, J. Phys. Chem. Solids, Vol. 32, no. 8, pp. 1707, 1971.
  • J Lee, A L G Aitken, S H Lee, and P K Bhattacharya, “Responsivity and Impact ionisation coefficients of Si1xGex photodiodes,” IEEE Electron Devices, Vol. 43, no. 6, pp. 977–81, 1996.
  • K Yeom, J M Hincley, and J Singh, “Calculation of electron and hole impact ionisation coefficients in SiGe alloys”, J. Appl. Phys., Vol. 80, no. 12, pp. 6773–82, 1996.
  • M Ershov, and V Ryzhii, “High field electron transport in SiGe alloy”, Jpn. J. Appl. Phys., Vol. 33, no. 3A, pp. 1365–71, 1994.
  • T Yamada, and D K Ferry, “Montecarlo simulation of hole transport in strained Si1-xGex”, Solid State Electron, Vol. 38, no. 4, pp. 881–90, 1995.
  • A Acharyya, and J P Banerjee, “A Comparative Study on the Effect of Optical Illumination on Si1-xGex and Si Based DDR IMPATT Diodes at W-Band,” Iranian Journal of Electronics and Electrical Engineering, Vol. 7, no. 3, pp. 179–89, 2011.

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