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Optical, magnetic and electronic device materials
Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography
Cheol-Min LimDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
, In-Kyu LeeHazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
, Ki Joong LeeHazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
, Young Kyoung OhHazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
, Yong-Beom ShinHazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of KoreaCorrespondence[email protected]
& Won-Ju ChoDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of KoreaCorrespondence[email protected]
Pages 17-25
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Received 24 Apr 2016, Accepted 24 Oct 2016, Published online: 06 Jan 2017
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Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography
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Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography
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