Advanced search
Publication Cover
Science and Technology of Advanced Materials Volume 21, 2020 - Issue 1
Submit an article Journal homepage
2,421
Views
25
CrossRef citations to date
0
Altmetric
Research Article

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

Takafumi Ishibea Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, JapanView further author information
,
Yoshiki Maedaa Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, JapanView further author information
,
Tsukasa Teradaa Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, JapanView further author information
,
Nobuyasu Naruseb Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga, JapanORCID Iconhttps://orcid.org/0000-0003-3934-2641View further author information
ORCID Icon,
Yutaka Merab Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga, JapanView further author information
,
Eiichi Kobayashic Kyushu Synchrotron Light Research Center, Tosu, Saga, JapanView further author information
&
Yoshiaki Nakamuraa Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, JapanCorrespondence[email protected]
View further author information
 show all
Pages 195-204 | Received 31 Oct 2019, Accepted 28 Feb 2020, Published online: 19 Mar 2020

Related Research Data

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.
Source: American Chemical Society (ACS)
Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium
Source: AIP Publishing
Oxygen vacancy induced magnetization switching in Fe3O4 epitaxial ultrathin films on GaAs(100)
Source: AIP Publishing
Surface reconstruction of Fe3O4(001)
Source: Elsevier BV
Resistive switching characteristics of isolated core-shell iron oxide/germanium nanocrystals epitaxially grown on Si substrates
Source: AIP Publishing
Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates
Source: IOP Publishing
Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
Source: Springer Science and Business Media LLC
Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material
Source: Elsevier BV
Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity.
Source: Informa UK Limited
Surface and interface properties of epitaxial iron oxide thin films deposited on MgO(001) studied by XPS and Raman spectroscopy
Source: Wiley
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Source: Springer Science and Business Media LLC
Resistive switching in transition metal oxides
Source: Elsevier BV
Probing memristive switching in nanoionic devices
Source: Springer Science and Business Media LLC
Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/α-FeSi2/Si stacking structure
Source: AIP Publishing
Epitaxial iron oxide nanocrystals with memory function grown on Si substrates
Source: IOP Publishing
Electroforming and resistance-switching mechanism in a magnetite thin film
Source: AIP Publishing
Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories
Source: American Chemical Society (ACS)
Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy
Source: AIP Publishing
Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire.
Source: American Chemical Society (ACS)
CORRIGENDUM: Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO 2 -covered Si substrates Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO 2 -covered Si substrates
Source: IOP Publishing
Electronic synapses made of layered two-dimensional materials
Source: Springer Science and Business Media LLC
Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
Source: AIP Publishing
Prominent Thermodynamical Interaction with Surroundings on Nanoscale Memristive Switching of Metal Oxides
Source: American Chemical Society (ACS)
Surface oxidation states of germanium
Source: Elsevier BV

Linking provided by 

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.