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Abstract
This paper focuses on the effect of back-etching on the electrical properties in (001)&(100) oriented Pb(Zr 0.3 Ti 0.7 )O 3 (PZT30) thin films. The PZT30 thin films were deposited by chemical solution deposition (CSD) on a Pt/Ti/SiO 2 /Si substrate with different back-etching depth. The back-etching depth was controlled by changing the etching time in the range from 287 μ m to 98 μ m (residual Si thickness; T Si = 13–202 μ m). The residual stress in PZT30 thin film was estimated at the back etched part and the un-etched part by Raman analysis. In addition, the dielectric and ferroelectric properties in PZT30 thin film were measured to estimate the effect of the back-etching depth on the electrical properties.