Sputtered BaTiO₃ films for silicon on insulator structures

Abstract

The physical properties of BaTiO₃ films deposited onto (100) oriented silicon wafers at low substrate temperature of 350°C for fabricating SOI structures are described. These films were prepared by rf planar magnetron-sputtering using a target of BaTiO₃ ceramic. The dielectric constant ε₈ and the dissipation factor tanδ of these films were about 100 and 0.013, respectively. These films showed a breakdown feild larger than 1×10⁶ V/cm and were superior insulating films. Thin film transistors were fabricated using a silicon film deposited onto the BaTiO₃ film. The field effect mobility of 34cm²/Vs was obtained.